WO2019002058A1 - ETCHING METHOD AND PLASMA ETCHING MATERIAL - Google Patents
ETCHING METHOD AND PLASMA ETCHING MATERIAL Download PDFInfo
- Publication number
- WO2019002058A1 WO2019002058A1 PCT/EP2018/066486 EP2018066486W WO2019002058A1 WO 2019002058 A1 WO2019002058 A1 WO 2019002058A1 EP 2018066486 W EP2018066486 W EP 2018066486W WO 2019002058 A1 WO2019002058 A1 WO 2019002058A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- etching
- etching method
- halogenated hydrocarbon
- film
- gas
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 257
- 238000000034 method Methods 0.000 title claims abstract description 77
- 239000000463 material Substances 0.000 title claims abstract description 72
- 238000001020 plasma etching Methods 0.000 title claims abstract description 13
- 150000008282 halocarbons Chemical class 0.000 claims abstract description 90
- 238000006243 chemical reaction Methods 0.000 claims abstract description 82
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims description 112
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 230000001590 oxidative effect Effects 0.000 claims description 38
- 239000011261 inert gas Substances 0.000 claims description 36
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 31
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 230000003746 surface roughness Effects 0.000 claims description 16
- -1 SiOC Inorganic materials 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 11
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910020175 SiOH Inorganic materials 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 125000001153 fluoro group Chemical group F* 0.000 claims description 6
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 5
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 5
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 5
- ZQBFAOFFOQMSGJ-UHFFFAOYSA-N hexafluorobenzene Chemical compound FC1=C(F)C(F)=C(F)C(F)=C1F ZQBFAOFFOQMSGJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052740 iodine Inorganic materials 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- VPAYJEUHKVESSD-UHFFFAOYSA-N trifluoroiodomethane Chemical compound FC(F)(F)I VPAYJEUHKVESSD-UHFFFAOYSA-N 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910001868 water Inorganic materials 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 230000007246 mechanism Effects 0.000 description 21
- 229920005591 polysilicon Polymers 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 18
- 238000005259 measurement Methods 0.000 description 18
- 238000005498 polishing Methods 0.000 description 18
- 125000004430 oxygen atom Chemical group O* 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 239000007800 oxidant agent Substances 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000011160 research Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229920002313 fluoropolymer Polymers 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- YXVFQADLFFNVDS-UHFFFAOYSA-N diammonium citrate Chemical compound [NH4+].[NH4+].[O-]C(=O)CC(O)(C(=O)O)CC([O-])=O YXVFQADLFFNVDS-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- QAEDZJGFFMLHHQ-UHFFFAOYSA-N trifluoroacetic anhydride Chemical compound FC(F)(F)C(=O)OC(=O)C(F)(F)F QAEDZJGFFMLHHQ-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000403 monosodium phosphate Inorganic materials 0.000 description 2
- 235000019799 monosodium phosphate Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 2
- MLIKYFGFHUYZAL-UHFFFAOYSA-K trisodium;hydron;phosphonato phosphate Chemical compound [Na+].[Na+].[Na+].OP([O-])(=O)OP([O-])([O-])=O MLIKYFGFHUYZAL-UHFFFAOYSA-K 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical class [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910000617 Mangalloy Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000007857 degradation product Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Definitions
- the thickness of the polymer deposited in the depression formed in the Si-containing material that is the etching target can be more precisely controlled and etching can be more precisely controlled.
- the carrier gas introduced to carry out bubbling can be exemplified by Ar, He, N 2 , and their mixtures, but there is no limitation to these.
- the halogenated hydrocarbon- containing gas and/or the C4F603-containing gas is introduced in the liquid state, the method of inducing volatilization by dripping liquid droplets within the plasma reaction chamber 21 is preferably used.
- approximately 5 to 10 g per 1 liter of water can be used for the first abrasive and 10 to 20 g per 1 liter of water can be used for the second abrasive, but there is no limitation to this.
- the use of a ceramic-based abrasive for the first abrasive and the use of an alumina-containing ceramic-based abrasive for the second abrasive is preferred, but there is no limitation to this and the abrasive used may be freely selected.
- the drying step can be executed by blowing, e.g., nitrogen gas, dry air, and so forth, into the container; however, there is no particular limitation to these although an inert gas should be used.
- the residual amount of moisture can also be further lowered by heating the metal container using a heater.
- Table 2 and Table 3 give the results of the etching of a silicon oxide film, silicon nitride film, polysilicon, and amorphous carbon film using the apparatus illustrated in Fig. 1.
- the halogenated hydrocarbon, C4F6O3, and an inert gas were supplied at flow rates controlled by respective mass flow controllers and were mixed prior to introduction into the plasma reaction chamber followed by introduction into the plasma reaction chamber 21.
- the total flow rate for the halogenated hydrocarbon and C4F6O3 was 10 SCCM, and the inert gas flow rate was 90 SCCM.
- the gas introduced into the plasma reaction chamber 21 was excited by a plasma.
- the temperature within the plasma reaction chamber 21 was adjusted to 25 °C by the temperature-regulating mechanism.
- the pressure within the plasma reaction chamber 21 was adjusted to 30 mTorr by the pressure-regulating mechanism.
- the thickness of the etched film was measured by ellipsometry for the silicon oxide film, silicon nitride film, and polysilicon film and the etching rate was calculated per the time for which the etching was performed.
- the thickness of the etched film was measured using a scanning electron microscope (also referred to as "SEM" in this Description) and the etching rate was calculated per the time for which etching was performed.
- Table 2 gives the results of measurement of the etching rate for the individual etching workpieces at different flow rate ratios between the halogenated hydrocarbon (hexafluoro-l,3-butadiene, C 4 F 6 ) and C 4 F 6 03.
- Table 3 gives the etching selectivities calculated from the measurement results given in Table 2.
- the etching selectivity is given by the value provided by dividing the etching rate for the silicon oxide film by the etching rate for the particular film other than the silicon oxide film.
- the etching performance is evaluated based on the etching rate and the selectivity. Etching is preferably carried out at a fast etching rate and a high selectivity.
- a low-k film was etched proceeding as in Example 1 and using the apparatus illustrated in Fig. 1.
- the total flow rate of the halogenated hydrocarbon and C4F6O3 was 6.0 SCCM, and the inert gas flow rate was 94 SCCM.
- Plasma reaction chamber A 4520XLE from LAM Research Corporation was used.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201880041923.8A CN110832623B (zh) | 2017-06-27 | 2018-06-20 | 蚀刻方法和等离子体蚀刻材料 |
| SG11201912232WA SG11201912232WA (en) | 2017-06-27 | 2018-06-20 | Etching method and plasma etching material |
| KR1020207001019A KR102563633B1 (ko) | 2017-06-27 | 2018-06-20 | 에칭 방법 및 플라즈마 에칭 재료 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017125070A JP6896522B2 (ja) | 2017-06-27 | 2017-06-27 | エッチング方法およびプラズマエッチング用材料 |
| JP2017-125070 | 2017-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2019002058A1 true WO2019002058A1 (en) | 2019-01-03 |
Family
ID=62948071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2018/066486 WO2019002058A1 (en) | 2017-06-27 | 2018-06-20 | ETCHING METHOD AND PLASMA ETCHING MATERIAL |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP6896522B2 (ja) |
| KR (1) | KR102563633B1 (ja) |
| CN (1) | CN110832623B (ja) |
| SG (1) | SG11201912232WA (ja) |
| TW (1) | TWI749216B (ja) |
| WO (1) | WO2019002058A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023056133A1 (en) * | 2021-09-30 | 2023-04-06 | Tokyo Electron Limited | Plasma etch process for fabricating high aspect ratio (har) features |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
| KR102244885B1 (ko) * | 2021-02-03 | 2021-04-27 | (주)원익머트리얼즈 | 높은 선택비를 갖는 식각 가스 조성물과 이를 이용한 반도체 메모리 소자의 제조 공정 |
| KR102489934B1 (ko) * | 2021-02-17 | 2023-01-18 | 대전대학교 산학협력단 | 식각 처리 장치 및 식각 처리 방법 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5626775A (en) * | 1996-05-13 | 1997-05-06 | Air Products And Chemicals, Inc. | Plasma etch with trifluoroacetic acid and derivatives |
| JP2005039277A (ja) | 2003-07-15 | 2005-02-10 | Air Products & Chemicals Inc | 選択的異方性エッチ用途のための不飽和酸素化フルオロカーボン |
| JP2015533029A (ja) | 2012-10-30 | 2015-11-16 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 高アスペクト比酸化物エッチング用のフルオロカーボン分子 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163476A (ja) * | 1992-11-18 | 1994-06-10 | Sony Corp | ドライエッチング方法 |
| IL119598A0 (en) * | 1995-11-17 | 1997-02-18 | Air Prod & Chem | Plasma etch with trifluoroacetic acid or its derivatives |
| JP4095246B2 (ja) | 1997-07-22 | 2008-06-04 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US6242359B1 (en) * | 1997-08-20 | 2001-06-05 | Air Liquide America Corporation | Plasma cleaning and etching methods using non-global-warming compounds |
| JPH11124386A (ja) * | 1997-10-17 | 1999-05-11 | Asahi Denka Kogyo Kk | トリメトキシシランの安定化方法 |
| US20050241671A1 (en) * | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for removing a substance from a substrate using electron attachment |
| JP2006128245A (ja) * | 2004-10-27 | 2006-05-18 | Sony Corp | 絶縁膜の加工方法 |
| JP6327295B2 (ja) * | 2015-08-12 | 2018-05-23 | セントラル硝子株式会社 | ドライエッチング方法 |
-
2017
- 2017-06-27 JP JP2017125070A patent/JP6896522B2/ja active Active
-
2018
- 2018-04-20 TW TW107113536A patent/TWI749216B/zh active
- 2018-06-20 WO PCT/EP2018/066486 patent/WO2019002058A1/en active Application Filing
- 2018-06-20 SG SG11201912232WA patent/SG11201912232WA/en unknown
- 2018-06-20 KR KR1020207001019A patent/KR102563633B1/ko active IP Right Grant
- 2018-06-20 CN CN201880041923.8A patent/CN110832623B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5626775A (en) * | 1996-05-13 | 1997-05-06 | Air Products And Chemicals, Inc. | Plasma etch with trifluoroacetic acid and derivatives |
| JP2005039277A (ja) | 2003-07-15 | 2005-02-10 | Air Products & Chemicals Inc | 選択的異方性エッチ用途のための不飽和酸素化フルオロカーボン |
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| KR20200018627A (ko) | 2020-02-19 |
| CN110832623B (zh) | 2024-01-19 |
| KR102563633B1 (ko) | 2023-08-07 |
| TW201906004A (zh) | 2019-02-01 |
| TWI749216B (zh) | 2021-12-11 |
| JP6896522B2 (ja) | 2021-06-30 |
| SG11201912232WA (en) | 2020-01-30 |
| CN110832623A (zh) | 2020-02-21 |
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