SG11201911940QA - Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells - Google Patents

Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Info

Publication number
SG11201911940QA
SG11201911940QA SG11201911940QA SG11201911940QA SG11201911940QA SG 11201911940Q A SG11201911940Q A SG 11201911940QA SG 11201911940Q A SG11201911940Q A SG 11201911940QA SG 11201911940Q A SG11201911940Q A SG 11201911940QA SG 11201911940Q A SG11201911940Q A SG 11201911940QA
Authority
SG
Singapore
Prior art keywords
memory cells
apparatuses
methods
dielectric
memory
Prior art date
Application number
SG11201911940QA
Inventor
Scott J Derner
Michael A Shore
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201911940QA publication Critical patent/SG11201911940QA/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • G11C14/0027—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell and the nonvolatile element is a ferroelectric element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Databases & Information Systems (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
SG11201911940QA 2017-07-13 2018-07-10 Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells SG11201911940QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762532205P 2017-07-13 2017-07-13
PCT/US2018/041513 WO2019014271A1 (en) 2017-07-13 2018-07-10 Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Publications (1)

Publication Number Publication Date
SG11201911940QA true SG11201911940QA (en) 2020-01-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201911940QA SG11201911940QA (en) 2017-07-13 2018-07-10 Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Country Status (8)

Country Link
US (2) US10867675B2 (en)
EP (1) EP3652783A4 (en)
JP (1) JP6964750B2 (en)
KR (2) KR102381808B1 (en)
CN (1) CN110914983B (en)
SG (1) SG11201911940QA (en)
TW (1) TWI681544B (en)
WO (1) WO2019014271A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9899073B2 (en) * 2016-06-27 2018-02-20 Micron Technology, Inc. Multi-level storage in ferroelectric memory
JP6980006B2 (en) 2016-08-31 2021-12-15 マイクロン テクノロジー，インク． Ferroelectric memory cell
KR102314663B1 (en) 2016-08-31 2021-10-21 마이크론 테크놀로지, 인크. Apparatus and method for including and accessing a 2 transistor-1 capacitor memory
WO2018044487A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
SG11201901168UA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
US11031400B2 (en) * 2018-08-10 2021-06-08 Micron Technology, Inc. Integrated memory comprising secondary access devices between digit lines and primary access devices
US11469251B2 (en) 2019-05-15 2022-10-11 Sandisk Technologies Llc Memory device using a multilayer ferroelectric stack and method of forming the same
DE102020100777A1 (en) * 2019-08-30 2021-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Analog non-volatile memory device using a polyferroelectric film with random polarization directions
KR20210052660A (en) 2019-10-29 2021-05-11 삼성전자주식회사 Three-dimensional Semiconductor memory device
US11856801B2 (en) * 2020-06-16 2023-12-26 Taiwan Semiconductor Manufacturing Company Limited Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same
US11552103B2 (en) 2020-06-26 2023-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional stackable ferroelectric random access memory devices and methods of forming
KR20220019498A (en) * 2020-08-10 2022-02-17 에스케이하이닉스 주식회사 Stacked Memory Device
US11450364B2 (en) 2020-08-27 2022-09-20 Taiwan Semiconductor Manufacturing Company Ltd. Computing-in-memory architecture
US11545202B2 (en) 2021-04-30 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit design and layout with high embedded memory density

Family Cites Families (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103342A (en) 1976-06-17 1978-07-25 International Business Machines Corporation Two-device memory cell with single floating capacitor
US4873664A (en) 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4853893A (en) * 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
US4888733A (en) 1988-09-12 1989-12-19 Ramtron Corporation Non-volatile memory cell and sensing method
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode
DE4118847A1 (en) 1990-06-08 1991-12-12 Toshiba Kawasaki Kk Semiconductor DRAM with matrix of cells coupled to driver leads - has read=out amplifiers connected and selectable by column address
JP3169599B2 (en) * 1990-08-03 2001-05-28 株式会社日立製作所 Semiconductor device, driving method thereof, and reading method thereof
US5241503A (en) 1991-02-25 1993-08-31 Motorola, Inc. Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers
JPH0541502A (en) 1991-05-28 1993-02-19 Sharp Corp Semiconductor storage device
US5218566A (en) 1991-08-15 1993-06-08 National Semiconductor Corporation Dynamic adjusting reference voltage for ferroelectric circuits
US5350705A (en) 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
US5309391A (en) 1992-10-02 1994-05-03 National Semiconductor Corporation Symmetrical polarization enhancement in a ferroelectric memory cell
JP3483210B2 (en) 1992-10-12 2004-01-06 ローム株式会社 Ferroelectric nonvolatile memory device
KR970000870B1 (en) 1992-12-02 1997-01-20 마쯔시다덴기산교 가부시기가이샤 Semiconductor memory device
US5539279A (en) * 1993-06-23 1996-07-23 Hitachi, Ltd. Ferroelectric memory
US5381364A (en) 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
US5373463A (en) 1993-07-06 1994-12-13 Motorola Inc. Ferroelectric nonvolatile random access memory having drive line segments
US5424975A (en) 1993-12-30 1995-06-13 Micron Technology, Inc. Reference circuit for a non-volatile ferroelectric memory
JP3745392B2 (en) 1994-05-26 2006-02-15 株式会社ルネサステクノロジ Semiconductor device
JP3591790B2 (en) 1994-08-29 2004-11-24 東芝マイクロエレクトロニクス株式会社 Ferroelectric memory, card and card system using the same
US5798964A (en) 1994-08-29 1998-08-25 Toshiba Corporation FRAM, FRAM card, and card system using the same
JP3590115B2 (en) * 1994-12-20 2004-11-17 株式会社日立製作所 Semiconductor memory
JP3186485B2 (en) * 1995-01-04 2001-07-11 日本電気株式会社 Ferroelectric memory device and operation control method thereof
EP0757354B1 (en) 1995-08-02 2002-05-22 Matsushita Electric Industrial Co., Ltd Ferroelectric memory device
US5598366A (en) 1995-08-16 1997-01-28 Ramtron International Corporation Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers
JP3622304B2 (en) * 1995-12-27 2005-02-23 株式会社日立製作所 Semiconductor memory device
JPH09288891A (en) 1996-04-19 1997-11-04 Matsushita Electron Corp Semiconductor memory
US5912846A (en) 1997-02-28 1999-06-15 Ramtron International Corporation Serial ferroelectric random access memory architecture to equalize column accesses and improve data retention reliability by mitigating imprint effects
JPH10270654A (en) 1997-03-27 1998-10-09 Toshiba Corp Semiconductor storage device
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
JPH10320981A (en) 1997-05-19 1998-12-04 Rohm Co Ltd Ferro-dielectric material memory
KR100306823B1 (en) 1997-06-02 2001-11-30 윤종용 Non-volatile semiconductor memory device having ferroelectric memory cells
JPH1116377A (en) * 1997-06-25 1999-01-22 Nec Corp Ferroelectric memory device
US5917746A (en) 1997-08-27 1999-06-29 Micron Technology, Inc. Cell plate structure for a ferroelectric memory
KR100268444B1 (en) 1997-08-30 2000-10-16 윤종용 Ferroelectric random access memory device
KR100297874B1 (en) 1997-09-08 2001-10-24 윤종용 Ferroelectric random access memory device
US5959878A (en) 1997-09-15 1999-09-28 Celis Semiconductor Corporation Ferroelectric memory cell with shunted ferroelectric capacitor and method of making same
JPH11110976A (en) 1997-10-02 1999-04-23 Mitsubishi Electric Corp Non-volatile semiconductor storage device
US6028783A (en) 1997-11-14 2000-02-22 Ramtron International Corporation Memory cell configuration for a 1T/1C ferroelectric memory
US6072711A (en) 1997-12-12 2000-06-06 Lg Semicon Co., Ltd. Ferroelectric memory device without a separate cell plate line and method of making the same
US6477098B1 (en) 1997-12-19 2002-11-05 Micron Technology, Inc. Dynamic random access memory array having segmented digit lines
EP0928004A3 (en) * 1997-12-31 1999-12-15 Texas Instruments Inc. Ferroelectric memory
JP3495905B2 (en) 1998-02-19 2004-02-09 シャープ株式会社 Semiconductor storage device
JP4299913B2 (en) * 1998-04-13 2009-07-22 株式会社東芝 Semiconductor memory device
US6028784A (en) 1998-05-01 2000-02-22 Texas Instruments Incorporated Ferroelectric memory device having compact memory cell array
JP3249470B2 (en) * 1998-06-05 2002-01-21 株式会社東芝 Nonvolatile semiconductor memory device and method of manufacturing the same
KR100282045B1 (en) 1998-08-07 2001-03-02 윤종용 Nonvolatile Dynamic Random Access Memory with Ferroelectric Capacitors
JP2000187989A (en) 1998-12-24 2000-07-04 Matsushita Electric Ind Co Ltd Data storage device
JP2000268581A (en) 1999-03-17 2000-09-29 Fujitsu Ltd Ferroelectric memory device storing rom data
US6147895A (en) 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same
JP4350222B2 (en) 1999-08-26 2009-10-21 Ｏｋｉセミコンダクタ株式会社 Method of operating a ferroelectric memory device
JP4253734B2 (en) 1999-09-02 2009-04-15 Ｏｋｉセミコンダクタ株式会社 Ferroelectric memory device and method of reading data from the device
JP3617615B2 (en) 1999-11-08 2005-02-09 シャープ株式会社 Ferroelectric memory device
KR100320435B1 (en) 1999-11-22 2002-01-15 박종섭 Nonvolatile ferroelectric memory device and method for manufacturing the same
KR100340074B1 (en) 1999-12-28 2002-06-12 박종섭 FeRAM having ferroelectric capacitor disposed over active area
US6449184B2 (en) 2000-06-19 2002-09-10 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
WO2002019341A2 (en) 2000-08-30 2002-03-07 Micron Technology, Inc. Semiconductor memory having dual port cell supporting hidden refresh
EP1187140A3 (en) 2000-09-05 2002-09-11 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
JP4047531B2 (en) * 2000-10-17 2008-02-13 株式会社東芝 Ferroelectric memory device
US6720596B2 (en) * 2000-10-17 2004-04-13 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for driving the same
WO2003052829A1 (en) 2001-12-14 2003-06-26 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JP2003197769A (en) 2001-12-21 2003-07-11 Mitsubishi Electric Corp Semiconductor storage device
JP3770171B2 (en) * 2002-02-01 2006-04-26 ソニー株式会社 Memory device and memory system using the same
JP3957520B2 (en) 2002-02-07 2007-08-15 富士通株式会社 Voltage generation circuit
JP4035350B2 (en) 2002-03-18 2008-01-23 富士通株式会社 Semiconductor device and semiconductor device manufacturing method
JP3650077B2 (en) * 2002-03-29 2005-05-18 沖電気工業株式会社 Semiconductor memory device
US6538914B1 (en) 2002-04-01 2003-03-25 Ramtron International Corporation Ferroelectric memory with bit-plate parallel architecture and operating method thereof
JP3984090B2 (en) 2002-04-01 2007-09-26 株式会社東芝 Ferroelectric memory device
US6704218B2 (en) 2002-04-02 2004-03-09 Agilent Technologies, Inc. FeRAM with a single access/multiple-comparison operation
KR100474737B1 (en) 2002-05-02 2005-03-08 동부아남반도체 주식회사 Dram fabrication capable of high integration and fabrication method
US6809949B2 (en) 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
KR100456598B1 (en) * 2002-09-09 2004-11-09 삼성전자주식회사 Memory device arranged memory cells having complementary data
US6804142B2 (en) 2002-11-12 2004-10-12 Micron Technology, Inc. 6F2 3-transistor DRAM gain cell
US6898104B2 (en) 2002-11-12 2005-05-24 Kabushiki Kaisha Toshiba Semiconductor device having semiconductor memory with sense amplifier
US20040095799A1 (en) * 2002-11-20 2004-05-20 Michael Jacob 2T2C signal margin test mode using different pre-charge levels for BL and/BL
US20040119105A1 (en) 2002-12-18 2004-06-24 Wilson Dennis Robert Ferroelectric memory
JP3806084B2 (en) 2002-12-25 2006-08-09 株式会社東芝 Ferroelectric memory and data read method thereof
KR100454254B1 (en) 2002-12-30 2004-10-26 주식회사 하이닉스반도체 Ferroelectric memory device with Merged-Top-Plate structure and method for fabricating the same
WO2004077441A1 (en) 2003-02-27 2004-09-10 Fujitsu Limited Semiconductor memory
JP2004281736A (en) 2003-03-17 2004-10-07 Nec Electronics Corp Semiconductor memory device
JP2004288282A (en) 2003-03-20 2004-10-14 Fujitsu Ltd Semiconductor device
JP4185969B2 (en) 2003-04-10 2008-11-26 富士通マイクロエレクトロニクス株式会社 Ferroelectric memory and data read method thereof
WO2004107350A1 (en) 2003-05-27 2004-12-09 Fujitsu Limited Ferroelectric memory
JP4015968B2 (en) 2003-06-09 2007-11-28 株式会社東芝 Ferroelectric memory
US6967365B2 (en) 2003-07-15 2005-11-22 Texas Instruments Incorporated Ferroelectric memory cell with angled cell transistor active region and methods for fabricating the same
US7019352B2 (en) 2003-08-07 2006-03-28 Texas Instruments Incorporated Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components
JP3777611B2 (en) 2003-10-31 2006-05-24 セイコーエプソン株式会社 Ferroelectric memory device and electronic device
JP2005141833A (en) 2003-11-06 2005-06-02 Seiko Epson Corp Ferroelectric memory device and electronic equipment
JP2005223137A (en) 2004-02-05 2005-08-18 Matsushita Electric Ind Co Ltd Ferroelectric memory device
JP4364052B2 (en) 2004-04-28 2009-11-11 Ｏｋｉセミコンダクタ株式会社 Manufacturing method of semiconductor device
CN1812105A (en) 2005-01-24 2006-08-02 鸿富锦精密工业（深圳）有限公司 Ferroelectric memory device and manufacturing method thereof
KR100575005B1 (en) 2005-03-23 2006-05-02 삼성전자주식회사 Memory device having shared open bitline sense amplifier architecture
US7957212B2 (en) 2005-03-31 2011-06-07 Hynix Semiconductor Inc. Pseudo SRAM
JP4756915B2 (en) 2005-05-31 2011-08-24 Ｏｋｉセミコンダクタ株式会社 Ferroelectric memory device and manufacturing method thereof
JP2006338747A (en) 2005-05-31 2006-12-14 Matsushita Electric Ind Co Ltd Ferroelectric memory device
JP2007004839A (en) 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd Semiconductor storage device
KR100765872B1 (en) 2005-08-02 2007-10-11 후지쯔 가부시끼가이샤 Ferroelectric memory
US7164595B1 (en) 2005-08-25 2007-01-16 Micron Technology, Inc. Device and method for using dynamic cell plate sensing in a DRAM memory cell
JP4746390B2 (en) * 2005-09-15 2011-08-10 株式会社東芝 Semiconductor memory device
US7209384B1 (en) 2005-12-08 2007-04-24 Juhan Kim Planar capacitor memory cell and its applications
JP4932273B2 (en) 2006-02-13 2012-05-16 ローム株式会社 Arithmetic processing circuit using ferroelectric capacitor and arithmetic method
JP2007266494A (en) 2006-03-29 2007-10-11 Toshiba Corp Semiconductor memory device
JP4745108B2 (en) 2006-04-06 2011-08-10 株式会社東芝 Nonvolatile semiconductor memory device
JP2008066603A (en) 2006-09-08 2008-03-21 Toshiba Corp Semiconductor memory device and its manufacturing method
JP4545133B2 (en) 2006-11-09 2010-09-15 富士通株式会社 Semiconductor memory device and manufacturing method thereof
JP4493666B2 (en) 2007-01-30 2010-06-30 株式会社ルネサステクノロジ Ferroelectric memory
JP5163641B2 (en) 2007-02-27 2013-03-13 富士通セミコンダクター株式会社 Semiconductor memory device, semiconductor memory device manufacturing method, and package resin forming method
KR100849794B1 (en) 2007-07-04 2008-07-31 주식회사 하이닉스반도체 Semiconductor memory device with ferroelectric device
US8254156B2 (en) 2007-08-22 2012-08-28 Rohm Co., Ltd. Data holding device
JP5162276B2 (en) * 2008-02-28 2013-03-13 ローム株式会社 Ferroelectric memory device
JP4660564B2 (en) 2008-03-11 2011-03-30 株式会社東芝 Semiconductor memory device
JP2010062329A (en) 2008-09-03 2010-03-18 Toshiba Corp Semiconductor device and method of manufacturing the same
US8009459B2 (en) 2008-12-30 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit for high speed dynamic memory
JP5295991B2 (en) 2010-02-15 2013-09-18 株式会社東芝 Nonvolatile semiconductor memory device and control method of nonvolatile semiconductor memory device
JP5671418B2 (en) 2010-08-06 2015-02-18 株式会社半導体エネルギー研究所 Driving method of semiconductor device
US20120074466A1 (en) 2010-09-28 2012-03-29 Seagate Technology Llc 3d memory array with vertical transistor
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
JP5500051B2 (en) 2010-11-22 2014-05-21 富士通セミコンダクター株式会社 Ferroelectric memory
US8508974B2 (en) 2010-12-30 2013-08-13 Texas Instruments Incorporated Ferroelectric memory with shunt device
US8477522B2 (en) 2010-12-30 2013-07-02 Texas Instruments Incorporated Ferroelectric memory write-back
US20120307545A1 (en) 2011-06-01 2012-12-06 Texas Instruments Incorporated Interleaved Bit Line Architecture for 2T2C Ferroelectric Memories
JP5158295B1 (en) 2011-07-15 2013-03-06 パナソニック株式会社 Method for driving semiconductor memory device
JP2013065604A (en) 2011-09-15 2013-04-11 Toshiba Corp Semiconductor device and manufacturing method of the same
JP6145972B2 (en) 2012-03-05 2017-06-14 富士通セミコンダクター株式会社 Nonvolatile latch circuit and memory device
US20140029326A1 (en) 2012-07-26 2014-01-30 Texas Instruments Incorporated Ferroelectric random access memory with a non-destructive read
KR101994309B1 (en) 2013-03-27 2019-09-30 에스케이하이닉스 주식회사 Semiconductor device and method for manufacturing the same, and micro processor, processor, system, data storage system and memory system including the semiconductor device
US9281044B2 (en) 2013-05-17 2016-03-08 Micron Technology, Inc. Apparatuses having a ferroelectric field-effect transistor memory array and related method
US10216484B2 (en) * 2014-06-10 2019-02-26 Texas Instruments Incorporated Random number generation with ferroelectric random access memory
US9558804B2 (en) 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
US10134984B1 (en) 2014-12-31 2018-11-20 Crossbar, Inc. Two-terminal memory electrode comprising a non-continuous contact surface
US9853211B2 (en) 2015-07-24 2017-12-26 Micron Technology, Inc. Array of cross point memory cells individually comprising a select device and a programmable device
US9514797B1 (en) * 2016-03-03 2016-12-06 Cypress Semiconductor Corporation Hybrid reference generation for ferroelectric random access memory
WO2018044487A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
JP6980006B2 (en) 2016-08-31 2021-12-15 マイクロン テクノロジー，インク． Ferroelectric memory cell
SG11201901168UA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
KR102314663B1 (en) 2016-08-31 2021-10-21 마이크론 테크놀로지, 인크. Apparatus and method for including and accessing a 2 transistor-1 capacitor memory
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

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