SG11201906797WA - Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same - Google Patents
Mask-integrated surface protective tape, and method of producing a semiconductor chip using the sameInfo
- Publication number
- SG11201906797WA SG11201906797WA SG11201906797WA SG11201906797WA SG11201906797WA SG 11201906797W A SG11201906797W A SG 11201906797WA SG 11201906797W A SG11201906797W A SG 11201906797WA SG 11201906797W A SG11201906797W A SG 11201906797WA SG 11201906797W A SG11201906797W A SG 11201906797WA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor chip
- producing
- surface protective
- protective tape
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 230000001681 protective effect Effects 0.000 title abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017034164 | 2017-02-24 | ||
PCT/JP2018/006503 WO2018155569A1 (ja) | 2017-02-24 | 2018-02-22 | マスク一体型表面保護テープおよびそれを用いる半導体チップの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201906797WA true SG11201906797WA (en) | 2019-08-27 |
Family
ID=63252798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201906797WA SG11201906797WA (en) | 2017-02-24 | 2018-02-22 | Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same |
Country Status (8)
Country | Link |
---|---|
US (1) | US11862504B2 (zh) |
JP (1) | JP7084306B2 (zh) |
KR (2) | KR102244291B1 (zh) |
CN (1) | CN109699189B (zh) |
MY (1) | MY195939A (zh) |
SG (1) | SG11201906797WA (zh) |
TW (1) | TWI680879B (zh) |
WO (1) | WO2018155569A1 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7281873B2 (ja) | 2018-05-14 | 2023-05-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP7154686B2 (ja) * | 2018-06-06 | 2022-10-18 | 株式会社ディスコ | ウェーハの加工方法 |
JP7143019B2 (ja) * | 2018-06-06 | 2022-09-28 | 株式会社ディスコ | ウェーハの加工方法 |
JP7143023B2 (ja) * | 2018-08-06 | 2022-09-28 | 株式会社ディスコ | ウェーハの加工方法 |
JP7154698B2 (ja) * | 2018-09-06 | 2022-10-18 | 株式会社ディスコ | ウェーハの加工方法 |
JP7175560B2 (ja) * | 2018-09-06 | 2022-11-21 | 株式会社ディスコ | ウェーハの加工方法 |
JP7166718B2 (ja) * | 2018-10-17 | 2022-11-08 | 株式会社ディスコ | ウェーハの加工方法 |
JP7171134B2 (ja) * | 2018-10-17 | 2022-11-15 | 株式会社ディスコ | ウェーハの加工方法 |
JP7503886B2 (ja) * | 2018-11-06 | 2024-06-21 | 株式会社ディスコ | ウェーハの加工方法 |
JP7199786B2 (ja) * | 2018-11-06 | 2023-01-06 | 株式会社ディスコ | ウェーハの加工方法 |
JP7251898B2 (ja) * | 2018-12-06 | 2023-04-04 | 株式会社ディスコ | ウェーハの加工方法 |
JP7246825B2 (ja) * | 2018-12-06 | 2023-03-28 | 株式会社ディスコ | ウェーハの加工方法 |
CN109671672A (zh) * | 2018-12-06 | 2019-04-23 | 武汉华星光电半导体显示技术有限公司 | 一种柔性基板切割方法 |
JP7224719B2 (ja) * | 2019-01-17 | 2023-02-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP7229636B2 (ja) * | 2019-01-17 | 2023-02-28 | 株式会社ディスコ | ウェーハの加工方法 |
JP7282453B2 (ja) * | 2019-02-15 | 2023-05-29 | 株式会社ディスコ | ウェーハの加工方法 |
JP7282452B2 (ja) * | 2019-02-15 | 2023-05-29 | 株式会社ディスコ | ウェーハの加工方法 |
JP7277019B2 (ja) * | 2019-03-05 | 2023-05-18 | 株式会社ディスコ | ウェーハの加工方法 |
JP7282455B2 (ja) * | 2019-03-05 | 2023-05-29 | 株式会社ディスコ | ウェーハの加工方法 |
JP7313767B2 (ja) * | 2019-04-10 | 2023-07-25 | 株式会社ディスコ | ウェーハの加工方法 |
JP2020174100A (ja) * | 2019-04-10 | 2020-10-22 | 株式会社ディスコ | ウェーハの加工方法 |
TWI797532B (zh) * | 2020-12-31 | 2023-04-01 | 創技工業股份有限公司 | 半導體加工的方法及裝置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63114124A (ja) * | 1986-10-31 | 1988-05-19 | Res Dev Corp Of Japan | X線マスク用メンブレンおよび製造法 |
JP4333649B2 (ja) | 2005-07-11 | 2009-09-16 | パナソニック株式会社 | 半導体チップの製造方法 |
JP5064985B2 (ja) * | 2006-12-05 | 2012-10-31 | 古河電気工業株式会社 | 半導体ウェハの処理方法 |
JP6045773B2 (ja) * | 2009-11-26 | 2016-12-14 | 日立化成株式会社 | 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 |
JP2015052836A (ja) * | 2013-09-05 | 2015-03-19 | 凸版印刷株式会社 | 透明導電性積層体の製造方法 |
JP6395586B2 (ja) * | 2014-12-15 | 2018-09-26 | 株式会社ディスコ | 被加工物の分割方法 |
JP6522998B2 (ja) * | 2015-03-13 | 2019-05-29 | 古河電気工業株式会社 | 半導体ウェハの処理方法、半導体チップおよび半導体ウェハ処理用表面保護テープ。 |
JP6034522B1 (ja) | 2016-03-17 | 2016-11-30 | 古河電気工業株式会社 | 半導体ウェハ加工用粘着テープおよび半導体ウェハの加工方法 |
JP6782215B2 (ja) * | 2017-10-18 | 2020-11-11 | 古河電気工業株式会社 | プラズマダイシング用マスク材、マスク一体型表面保護テープおよび半導体チップの製造方法 |
-
2018
- 2018-02-22 KR KR1020207026341A patent/KR102244291B1/ko active IP Right Grant
- 2018-02-22 MY MYPI2019004792A patent/MY195939A/en unknown
- 2018-02-22 WO PCT/JP2018/006503 patent/WO2018155569A1/ja active Application Filing
- 2018-02-22 SG SG11201906797WA patent/SG11201906797WA/en unknown
- 2018-02-22 KR KR1020197002695A patent/KR102191706B1/ko active IP Right Grant
- 2018-02-22 JP JP2018535436A patent/JP7084306B2/ja active Active
- 2018-02-22 CN CN201880002974.XA patent/CN109699189B/zh active Active
- 2018-02-23 TW TW107106169A patent/TWI680879B/zh active
-
2019
- 2019-08-23 US US16/549,910 patent/US11862504B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP7084306B2 (ja) | 2022-06-14 |
CN109699189A (zh) | 2019-04-30 |
JPWO2018155569A1 (ja) | 2019-12-12 |
KR102244291B1 (ko) | 2021-04-26 |
CN109699189B (zh) | 2024-01-30 |
MY195939A (en) | 2023-02-27 |
TW201840408A (zh) | 2018-11-16 |
WO2018155569A1 (ja) | 2018-08-30 |
KR20200108508A (ko) | 2020-09-18 |
KR20190021447A (ko) | 2019-03-05 |
US20190378747A1 (en) | 2019-12-12 |
US11862504B2 (en) | 2024-01-02 |
KR102191706B1 (ko) | 2020-12-16 |
TWI680879B (zh) | 2020-01-01 |
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