SG11201906177WA - Transparent film error correction pattern in wafer geometry system - Google Patents
Transparent film error correction pattern in wafer geometry systemInfo
- Publication number
- SG11201906177WA SG11201906177WA SG11201906177WA SG11201906177WA SG11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA SG 11201906177W A SG11201906177W A SG 11201906177WA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- wafer
- transparent film
- wafer geometry
- geometry
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
- G01B21/045—Correction of measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/8422—Investigating thin films, e.g. matrix isolation method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Seats For Vehicles (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762443815P | 2017-01-09 | 2017-01-09 | |
US15/649,259 US10571248B2 (en) | 2017-01-09 | 2017-07-13 | Transparent film error correction pattern in wafer geometry system |
PCT/US2018/012673 WO2018129385A1 (en) | 2017-01-09 | 2018-01-05 | Transparent film error correction pattern in wafer geometry system |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201906177WA true SG11201906177WA (en) | 2019-08-27 |
Family
ID=62782771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201906177WA SG11201906177WA (en) | 2017-01-09 | 2018-01-05 | Transparent film error correction pattern in wafer geometry system |
Country Status (8)
Country | Link |
---|---|
US (1) | US10571248B2 (zh) |
EP (1) | EP3549159A4 (zh) |
JP (1) | JP6917462B2 (zh) |
KR (1) | KR102301560B1 (zh) |
CN (1) | CN110419098B (zh) |
SG (1) | SG11201906177WA (zh) |
TW (1) | TWI752146B (zh) |
WO (1) | WO2018129385A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10317198B2 (en) * | 2016-09-30 | 2019-06-11 | Kla-Tencor Corporation | Three-dimensional mapping of a wafer |
US11067902B2 (en) * | 2017-08-07 | 2021-07-20 | Asml Netherlands B.V. | Computational metrology |
EP3489619A1 (en) | 2017-11-28 | 2019-05-29 | Koh Young Technology Inc. | Apparatus for inspecting substrate and method thereof |
US10852125B2 (en) * | 2017-11-28 | 2020-12-01 | Koh Young Technology Inc. | Apparatus for inspecting film on substrate by using optical interference and method thereof |
US11112234B2 (en) * | 2018-03-07 | 2021-09-07 | Applejack 199 L.P. | Multi-probe gauge for slab characterization |
JP6402273B1 (ja) * | 2018-05-18 | 2018-10-10 | 大塚電子株式会社 | 光学測定装置及び光学測定方法 |
US11049720B2 (en) | 2018-10-19 | 2021-06-29 | Kla Corporation | Removable opaque coating for accurate optical topography measurements on top surfaces of transparent films |
JP2022524926A (ja) * | 2019-01-31 | 2022-05-11 | キング・アブドゥッラー・ユニバーシティ・オブ・サイエンス・アンド・テクノロジー | 多層ナノ素子に基づく光処理デバイス |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5042949A (en) | 1989-03-17 | 1991-08-27 | Greenberg Jeffrey S | Optical profiler for films and substrates |
US5129724A (en) * | 1991-01-29 | 1992-07-14 | Wyko Corporation | Apparatus and method for simultaneous measurement of film thickness and surface height variation for film-substrate sample |
US7324214B2 (en) | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
US6847458B2 (en) | 2003-03-20 | 2005-01-25 | Phase Shift Technology, Inc. | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
JP4192038B2 (ja) * | 2003-06-04 | 2008-12-03 | 東レエンジニアリング株式会社 | 表面形状および/または膜厚測定方法及びその装置 |
US7298494B2 (en) * | 2003-09-15 | 2007-11-20 | Zygo Corporation | Methods and systems for interferometric analysis of surfaces and related applications |
EP1751492A4 (en) * | 2004-03-11 | 2016-07-20 | Icos Vision Systems Nv | METHODS AND APPARATUS FOR HANDLING WAVE FRONTS AND IMPROVED 3D MEASUREMENTS |
US7595891B2 (en) * | 2005-07-09 | 2009-09-29 | Kla-Tencor Corporation | Measurement of the top surface of an object with/without transparent thin films in white light interferometry |
GB0712605D0 (en) * | 2007-06-28 | 2007-08-08 | Microsharp Corp Ltd | Optical film |
JP2011504293A (ja) * | 2007-11-02 | 2011-02-03 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッド | 薄膜光起電性適用向けの透明導電性酸化膜、及びその製造方法 |
US8068234B2 (en) | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
US8395191B2 (en) * | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
EP2470960A1 (en) | 2009-08-24 | 2012-07-04 | ASML Netherlands BV | Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets |
WO2012012795A1 (en) | 2010-07-23 | 2012-01-26 | First Solar, Inc | In-line metrology system and method |
US20120089365A1 (en) * | 2010-10-08 | 2012-04-12 | Zygo Corporation | Data interpolation methods for metrology of surfaces, films and underresolved structures |
US8818754B2 (en) * | 2011-04-22 | 2014-08-26 | Nanometrics Incorporated | Thin films and surface topography measurement using reduced library |
US8552369B2 (en) * | 2011-05-03 | 2013-10-08 | International Business Machines Corporation | Obtaining elemental concentration profile of sample |
US9385058B1 (en) * | 2012-12-29 | 2016-07-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US20140293291A1 (en) | 2013-04-01 | 2014-10-02 | Kla-Tencor Corporation | Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers |
US9189705B2 (en) * | 2013-08-08 | 2015-11-17 | JSMSW Technology LLC | Phase-controlled model-based overlay measurement systems and methods |
JP5871242B2 (ja) * | 2013-10-30 | 2016-03-01 | レーザーテック株式会社 | 膜厚測定装置及び膜厚測定方法 |
KR102046699B1 (ko) * | 2015-03-24 | 2019-11-19 | 코니카 미놀타 가부시키가이샤 | 폴리이미드계 광학 필름, 그의 제조 방법 및 유기 일렉트로루미네센스 디스플레이 |
JP6321579B2 (ja) | 2015-06-01 | 2018-05-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理システム、基板処理装置及びプログラム |
EP3150959B1 (en) * | 2015-10-02 | 2018-12-26 | Soitec | Method for measuring thickness variations in a layer of a multilayer semiconductor structure |
-
2017
- 2017-07-13 US US15/649,259 patent/US10571248B2/en active Active
-
2018
- 2018-01-05 CN CN201880011565.6A patent/CN110419098B/zh active Active
- 2018-01-05 EP EP18735858.5A patent/EP3549159A4/en active Pending
- 2018-01-05 KR KR1020197022676A patent/KR102301560B1/ko active IP Right Grant
- 2018-01-05 SG SG11201906177WA patent/SG11201906177WA/en unknown
- 2018-01-05 JP JP2019537105A patent/JP6917462B2/ja active Active
- 2018-01-05 WO PCT/US2018/012673 patent/WO2018129385A1/en unknown
- 2018-01-08 TW TW107100588A patent/TWI752146B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201839876A (zh) | 2018-11-01 |
KR20190097281A (ko) | 2019-08-20 |
EP3549159A1 (en) | 2019-10-09 |
KR102301560B1 (ko) | 2021-09-10 |
CN110419098A (zh) | 2019-11-05 |
EP3549159A4 (en) | 2020-09-09 |
JP2020503526A (ja) | 2020-01-30 |
US20180195855A1 (en) | 2018-07-12 |
TWI752146B (zh) | 2022-01-11 |
CN110419098B (zh) | 2021-02-02 |
US10571248B2 (en) | 2020-02-25 |
WO2018129385A1 (en) | 2018-07-12 |
JP6917462B2 (ja) | 2021-08-11 |
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