SG11201903555WA - Chip defect detection device and detection method - Google Patents
Chip defect detection device and detection methodInfo
- Publication number
- SG11201903555WA SG11201903555WA SG11201903555WA SG11201903555WA SG11201903555WA SG 11201903555W A SG11201903555W A SG 11201903555WA SG 11201903555W A SG11201903555W A SG 11201903555WA SG 11201903555W A SG11201903555W A SG 11201903555WA SG 11201903555W A SG11201903555W A SG 11201903555WA
- Authority
- SG
- Singapore
- Prior art keywords
- detection
- chip
- receiving
- detection device
- defect
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02032—Interferometers characterised by the beam path configuration generating a spatial carrier frequency, e.g. by creating lateral or angular offset between reference and object beam
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/021—Interferometers using holographic techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/40—Caliper-like sensors
- G01B2210/48—Caliper-like sensors for measurement of a wafer
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610916613.9A CN107966453B (zh) | 2016-10-20 | 2016-10-20 | 一种芯片缺陷检测装置及检测方法 |
PCT/CN2017/107115 WO2018072749A1 (zh) | 2016-10-20 | 2017-10-20 | 一种芯片缺陷检测装置及检测方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201903555WA true SG11201903555WA (en) | 2019-05-30 |
Family
ID=61997180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201903555WA SG11201903555WA (en) | 2016-10-20 | 2017-10-20 | Chip defect detection device and detection method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10942129B2 (de) |
EP (1) | EP3531118A4 (de) |
JP (1) | JP2019537713A (de) |
KR (1) | KR20190069533A (de) |
CN (1) | CN107966453B (de) |
SG (1) | SG11201903555WA (de) |
TW (1) | TWI642928B (de) |
WO (1) | WO2018072749A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109087290B (zh) * | 2018-07-24 | 2022-03-08 | 中国科学院上海光学精密机械研究所 | 基于光谱估计与电子分光技术的光学元件表面疵病检测方法 |
CN109270082B (zh) * | 2018-08-09 | 2021-05-11 | 宁夏中晶半导体材料有限公司 | 一种利用腐蚀方法及微观检测确定单晶硅晶线的方法 |
CN109712912B (zh) * | 2018-12-06 | 2023-07-18 | 通富微电子股份有限公司 | 一种芯片倒装设备及方法 |
CN111380874B (zh) * | 2018-12-28 | 2021-04-30 | 上海微电子装备(集团)股份有限公司 | 缺陷检测装置、键合设备以及键合方法 |
US10684118B1 (en) * | 2019-04-09 | 2020-06-16 | Asm Technology Singapore Pte Ltd | Apparatus for determining an orientation of a die |
CN112748111B (zh) * | 2019-10-31 | 2022-09-27 | 上海微电子装备(集团)股份有限公司 | 三维检测装置及三维检测方法 |
US11631169B2 (en) | 2020-08-02 | 2023-04-18 | KLA Corp. | Inspection of noisy patterned features |
CN112595720A (zh) * | 2020-12-21 | 2021-04-02 | 藤仓烽火光电材料科技有限公司 | 一种基于激光干涉成像检测疏松体的系统 |
JP7555310B2 (ja) * | 2021-07-14 | 2024-09-24 | 株式会社日立ハイテク | 試料観察装置、試料観察方法、およびコンピュータシステム |
CN116309600B (zh) * | 2023-05-24 | 2023-08-04 | 山东金佳成工程材料有限公司 | 基于图像处理的环保纺织品质量检测方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4744659A (en) * | 1985-03-20 | 1988-05-17 | Ricoh Company, Ltd. | Method of and apparatus for measuring the shape of a wavefront |
GB9903638D0 (en) * | 1999-02-17 | 1999-04-07 | European Community | A measurement method and measurement apparatus |
JP2007093288A (ja) * | 2005-09-27 | 2007-04-12 | Matsushita Electric Ind Co Ltd | 光計測装置及び光計測方法 |
JP4885154B2 (ja) * | 2007-01-31 | 2012-02-29 | 国立大学法人東京工業大学 | 複数波長による表面形状の測定方法およびこれを用いた装置 |
CN101324422B (zh) * | 2007-06-12 | 2011-01-19 | 北京普瑞微纳科技有限公司 | 白光干涉测量样品表面形状精细分布的方法及其装置 |
CN201050978Y (zh) * | 2007-06-15 | 2008-04-23 | 西安普瑞光学仪器有限公司 | 白光干涉测量样品表面形状精细分布的装置 |
CN101477325A (zh) | 2008-01-02 | 2009-07-08 | 财团法人工业技术研究院 | 多彩离轴数字全像系统及其成像方法 |
JP5330749B2 (ja) * | 2008-07-01 | 2013-10-30 | 株式会社トプコン | 測定装置 |
JP2011038829A (ja) * | 2009-08-07 | 2011-02-24 | Topcon Corp | 干渉顕微鏡及び測定装置 |
JP5406623B2 (ja) * | 2009-08-10 | 2014-02-05 | キヤノン株式会社 | 計測装置、露光装置及びデバイスの製造方法 |
WO2012132811A1 (ja) * | 2011-03-29 | 2012-10-04 | Koyama Naoyuki | 測距方法及びレーザ測距装置 |
DE102011051146B3 (de) * | 2011-06-17 | 2012-10-04 | Precitec Optronik Gmbh | Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben |
EP2565725B1 (de) * | 2011-09-02 | 2014-04-30 | Mitutoyo Corporation | Verfahren und Vorrichtung zur exakten Rekonstruktion der Objektwelle in digitaler off-axis Holographie |
CN102538866B (zh) * | 2011-12-23 | 2013-05-15 | 北京交通大学 | 一种可调谐拍波线扫描的表面三维干涉测量系统 |
CN103615993B (zh) | 2013-11-29 | 2016-05-11 | 天津大学 | 基于离轴显微干涉术的微结构测试系统及方法 |
US9389064B2 (en) * | 2014-03-28 | 2016-07-12 | Intel Corporation | Inline inspection of the contact between conductive traces and substrate for hidden defects using white light interferometer with tilted objective lens |
KR102414277B1 (ko) * | 2014-04-07 | 2022-06-29 | 노바 엘티디. | 광학 위상 측정 방법 및 시스템 |
CN104006763A (zh) * | 2014-06-11 | 2014-08-27 | 北京航空航天大学 | 一种基于多波长的数字全息三维形貌检测装置 |
CN104457581B (zh) * | 2014-08-28 | 2017-03-22 | 深圳奥比中光科技有限公司 | 一种全场z向位移测量系统 |
CN104297260B (zh) * | 2014-11-04 | 2017-10-10 | 广州广电运通金融电子股份有限公司 | 一种薄介质的无接触式检测方法及装置 |
CN104534979B (zh) * | 2014-12-10 | 2016-10-19 | 佛山市南海区欧谱曼迪科技有限责任公司 | 一种多波长相移显微成像系统及方法 |
DE102015113465B4 (de) * | 2015-08-14 | 2018-05-03 | Medizinisches Laserzentrum Lübeck GmbH | Verfahren und Vorrichtung zum Ablichten wenigstens einer Schnittfläche im Innern eines Licht streuenden Objekts |
CN105159044A (zh) | 2015-09-29 | 2015-12-16 | 南京理工大学 | 基于双波长数字全息技术的反射式显微成像装置 |
CN105842257B (zh) * | 2016-05-09 | 2019-01-11 | 南京理工大学 | 一种亚微米量级的玻璃亚表面缺陷检测装置及方法 |
-
2016
- 2016-10-20 CN CN201610916613.9A patent/CN107966453B/zh active Active
-
2017
- 2017-10-20 EP EP17862730.3A patent/EP3531118A4/de not_active Withdrawn
- 2017-10-20 TW TW106136427A patent/TWI642928B/zh active
- 2017-10-20 JP JP2019521145A patent/JP2019537713A/ja active Pending
- 2017-10-20 WO PCT/CN2017/107115 patent/WO2018072749A1/zh unknown
- 2017-10-20 SG SG11201903555WA patent/SG11201903555WA/en unknown
- 2017-10-20 KR KR1020197014519A patent/KR20190069533A/ko not_active Application Discontinuation
- 2017-10-20 US US16/343,913 patent/US10942129B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI642928B (zh) | 2018-12-01 |
TW201819897A (zh) | 2018-06-01 |
US20200173932A1 (en) | 2020-06-04 |
CN107966453B (zh) | 2020-08-04 |
EP3531118A1 (de) | 2019-08-28 |
EP3531118A4 (de) | 2019-11-20 |
WO2018072749A1 (zh) | 2018-04-26 |
CN107966453A (zh) | 2018-04-27 |
KR20190069533A (ko) | 2019-06-19 |
JP2019537713A (ja) | 2019-12-26 |
US10942129B2 (en) | 2021-03-09 |
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