SG11201903536VA - Magnetic thin film laminated structure deposition method, magnetic thin film laminated structure and micro-inductance device - Google Patents

Magnetic thin film laminated structure deposition method, magnetic thin film laminated structure and micro-inductance device

Info

Publication number
SG11201903536VA
SG11201903536VA SG11201903536VA SG11201903536VA SG11201903536VA SG 11201903536V A SG11201903536V A SG 11201903536VA SG 11201903536V A SG11201903536V A SG 11201903536VA SG 11201903536V A SG11201903536V A SG 11201903536VA SG 11201903536V A SG11201903536V A SG 11201903536VA
Authority
SG
Singapore
Prior art keywords
thin film
laminated structure
magnetic thin
film laminated
micro
Prior art date
Application number
SG11201903536VA
Other languages
English (en)
Inventor
Yujie Yang
Peijun Ding
Tongwen Zhang
Wei Xia
Hougong Wang
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201903536VA publication Critical patent/SG11201903536VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/02—Cores, Yokes, or armatures made from sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/04—Fixed inductances of the signal type  with magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/24—Magnetic cores
    • H01F27/26—Fastening parts of the core together; Fastening or mounting the core on casing or support
    • H01F27/263—Fastening parts of the core together
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/0206—Manufacturing of magnetic cores by mechanical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Magnetic Films (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
SG11201903536VA 2016-10-31 2017-10-25 Magnetic thin film laminated structure deposition method, magnetic thin film laminated structure and micro-inductance device SG11201903536VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610929057.9A CN108022751B (zh) 2016-10-31 2016-10-31 磁性薄膜叠层的沉积方法、磁性薄膜叠层及微电感器件
PCT/CN2017/107630 WO2018077180A1 (zh) 2016-10-31 2017-10-25 磁性薄膜叠层结构的沉积方法、磁性薄膜叠层结构及微电感器件

Publications (1)

Publication Number Publication Date
SG11201903536VA true SG11201903536VA (en) 2019-05-30

Family

ID=62023117

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201903536VA SG11201903536VA (en) 2016-10-31 2017-10-25 Magnetic thin film laminated structure deposition method, magnetic thin film laminated structure and micro-inductance device

Country Status (7)

Country Link
US (2) US11699541B2 (ja)
JP (1) JP6901557B2 (ja)
KR (1) KR102159893B1 (ja)
CN (1) CN108022751B (ja)
SG (1) SG11201903536VA (ja)
TW (2) TWI732962B (ja)
WO (1) WO2018077180A1 (ja)

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608297A (en) * 1982-04-21 1986-08-26 Showa Denka Kabushiki Kaisha Multilayer composite soft magnetic material comprising amorphous and insulating layers and a method for manufacturing the core of a magnetic head and a reactor
US4687712A (en) * 1983-12-12 1987-08-18 Matsushita Electric Industrial Co., Ltd. Vertical magnetic recording medium
JPS61180914A (ja) * 1985-02-06 1986-08-13 Canon Inc 磁気ヘツド基板の製造方法
JP2696989B2 (ja) * 1988-09-20 1998-01-14 三菱マテリアル株式会社 多層磁性膜
JPH03112106A (ja) * 1989-09-27 1991-05-13 Amorufuasu Denshi Device Kenkyusho:Kk 多層磁性薄膜およびその製造方法
FR2655180B1 (fr) * 1989-11-28 1992-02-07 Commissariat Energie Atomique Materiau magnetique composite en feuilles et son procede de fabrication.
JPH03278409A (ja) * 1990-03-23 1991-12-10 Shin Etsu Chem Co Ltd 積層軟磁性薄膜
JP2741277B2 (ja) * 1990-04-19 1998-04-15 松下電器産業株式会社 薄膜超電導体およびその製造方法
JPH09293207A (ja) * 1996-04-26 1997-11-11 Sony Corp 磁気ヘッド
JP4457530B2 (ja) * 2001-06-29 2010-04-28 日立金属株式会社 永久磁石薄膜
US20040219328A1 (en) * 2001-08-31 2004-11-04 Kazunori Tasaki Laminated soft magnetic member, soft magnetic sheet and production method for laminated soft magnetic member
US7989095B2 (en) * 2004-12-28 2011-08-02 General Electric Company Magnetic layer with nanodispersoids having a bimodal distribution
JP4773254B2 (ja) * 2006-03-15 2011-09-14 太陽誘電株式会社 高周波磁性薄膜及び高周波電子デバイス
CN100517642C (zh) * 2006-12-22 2009-07-22 中芯国际集成电路制造(上海)有限公司 通孔的形成方法
JP4720808B2 (ja) * 2007-09-21 2011-07-13 セイコーエプソン株式会社 接着シート、接合方法および接合体
CN101260514B (zh) * 2008-04-10 2011-08-10 兰州大学 一种制备高频软磁薄膜的方法及装置
CN101285170B (zh) * 2008-05-08 2010-09-08 兰州大学 制备宽频带吸波磁性多层膜的方法
JP5105333B2 (ja) * 2008-08-18 2012-12-26 昭和電工株式会社 磁気記録媒体、その製造方法および磁気記録再生装置
WO2011068695A1 (en) * 2009-12-02 2011-06-09 3M Innovative Properties Company Multilayer emi shielding thin film with high rf permeability
JP5670638B2 (ja) * 2010-01-26 2015-02-18 昭和電工株式会社 熱アシスト磁気記録媒体及び磁気記録再生装置
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JP5403279B2 (ja) * 2010-08-04 2014-01-29 戸田工業株式会社 Ｒｆタグの製造方法、磁性体アンテナの製造方法及び当該ｒｆタグを実装した基板、通信システム
CN102623434B (zh) * 2011-01-31 2015-02-18 北京泰龙电子技术有限公司 一种扩散阻挡层及其制备方法
CN103918024B (zh) 2011-08-02 2016-08-17 夏普株式会社 液晶显示装置和辅助电容线的驱动方法
CN103918042A (zh) * 2011-08-16 2014-07-09 乔治亚技术研究公司 使用由粘合剂粘合的层状纳米复合材料薄膜的磁性器件
CN103929933B (zh) * 2013-01-10 2017-04-12 昆山雅森电子材料科技有限公司 抑制电磁波干扰结构及具有该结构的软性印刷电路板
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Also Published As

Publication number Publication date
WO2018077180A1 (zh) 2018-05-03
JP6901557B2 (ja) 2021-07-14
KR20190065415A (ko) 2019-06-11
JP2020501341A (ja) 2020-01-16
TW201818435A (zh) 2018-05-16
CN108022751A (zh) 2018-05-11
TW202135105A (zh) 2021-09-16
CN108022751B (zh) 2022-01-11
KR102159893B1 (ko) 2020-09-24
US11699541B2 (en) 2023-07-11
US20190244736A1 (en) 2019-08-08
TWI754592B (zh) 2022-02-01
US20230298789A1 (en) 2023-09-21
TWI732962B (zh) 2021-07-11

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