SG11201903354UA - Dry etching agent composition and dry etching method - Google Patents
Dry etching agent composition and dry etching methodInfo
- Publication number
- SG11201903354UA SG11201903354UA SG11201903354UA SG11201903354UA SG11201903354UA SG 11201903354U A SG11201903354U A SG 11201903354UA SG 11201903354U A SG11201903354U A SG 11201903354UA SG 11201903354U A SG11201903354U A SG 11201903354UA SG 11201903354U A SG11201903354U A SG 11201903354UA
- Authority
- SG
- Singapore
- Prior art keywords
- dry etching
- agent composition
- etching agent
- tetrafluoropropene
- hfo
- Prior art date
Links
- 238000001312 dry etching Methods 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- CDOOAUSHHFGWSA-OWOJBTEDSA-N (e)-1,3,3,3-tetrafluoroprop-1-ene Chemical compound F\C=C\C(F)(F)F CDOOAUSHHFGWSA-OWOJBTEDSA-N 0.000 abstract 4
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 230000002378 acidificating effect Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2205/00—Aspects relating to compounds used in compression type refrigeration systems
- C09K2205/10—Components
- C09K2205/12—Hydrocarbons
- C09K2205/126—Unsaturated fluorinated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2205/00—Aspects relating to compounds used in compression type refrigeration systems
- C09K2205/10—Components
- C09K2205/12—Hydrocarbons
- C09K2205/128—Perfluorinated hydrocarbons
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016229880A JP6323540B1 (ja) | 2016-11-28 | 2016-11-28 | ドライエッチング剤組成物及びドライエッチング方法 |
| PCT/JP2017/038100 WO2018096855A1 (ja) | 2016-11-28 | 2017-10-23 | ドライエッチング剤組成物及びドライエッチング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201903354UA true SG11201903354UA (en) | 2019-05-30 |
Family
ID=62143868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201903354UA SG11201903354UA (en) | 2016-11-28 | 2017-10-23 | Dry etching agent composition and dry etching method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10872780B2 (zh) |
| JP (1) | JP6323540B1 (zh) |
| KR (1) | KR102316409B1 (zh) |
| CN (1) | CN110036460B (zh) |
| SG (1) | SG11201903354UA (zh) |
| TW (1) | TWI631234B (zh) |
| WO (1) | WO2018096855A1 (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7030648B2 (ja) | 2018-08-09 | 2022-03-07 | キオクシア株式会社 | 半導体装置の製造方法およびエッチングガス |
| EP4099365A4 (en) * | 2020-01-30 | 2023-08-16 | Resonac Corporation | ETCHING PROCESS |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4946548A (en) * | 1988-04-29 | 1990-08-07 | Toyoda Gosei Co., Ltd. | Dry etching method for semiconductor |
| US5385633A (en) * | 1990-03-29 | 1995-01-31 | The United States Of America As Represented By The Secretary Of The Navy | Method for laser-assisted silicon etching using halocarbon ambients |
| US5310989A (en) * | 1990-04-10 | 1994-05-10 | The United States Of America As Represented By The Secretary Of The Navy | Method for laser-assisted etching of III-V and II-VI semiconductor compounds using chlorofluorocarbon ambients |
| US20110079040A1 (en) | 2008-06-24 | 2011-04-07 | Mitsubishi Electric Corporation | Refrigerating cycle device and air conditioner |
| JP2010083818A (ja) | 2008-09-30 | 2010-04-15 | Central Glass Co Ltd | １，３，３，３−テトラフルオロプロペンの脱水方法 |
| WO2010098447A1 (ja) | 2009-02-26 | 2010-09-02 | ダイキン工業株式会社 | 温暖化係数の低いハイドロフルオロプロペンを含む冷媒組成物 |
| ES2621969T3 (es) | 2009-02-26 | 2017-07-05 | Daikin Industries, Ltd. | Composición refrigerante que contiene un hidrofluoropropeno con bajo potencial de calentamiento global |
| GB0918069D0 (en) * | 2009-10-15 | 2009-12-02 | Ineos Fluor Holdings Ltd | Process |
| JP5434970B2 (ja) * | 2010-07-12 | 2014-03-05 | セントラル硝子株式会社 | ドライエッチング剤 |
| JP4952834B2 (ja) | 2010-09-07 | 2012-06-13 | ダイキン工業株式会社 | 含フッ素化合物からの水分除去方法 |
| JP5747684B2 (ja) * | 2010-09-14 | 2015-07-15 | セントラル硝子株式会社 | ヒドロフルオロカーボンまたはヒドロクロロフルオロカーボンの脱水方法、および該脱水方法を用いた１，３，３，３−テトラフルオロプロペンの製造方法 |
| JP6377524B2 (ja) | 2012-04-27 | 2018-08-22 | Ａｇｃ株式会社 | テトラフルオロプロペンの保存方法およびテトラフルオロプロペンの保存容器 |
| US9728422B2 (en) * | 2015-01-23 | 2017-08-08 | Central Glass Company, Limited | Dry etching method |
| JP6788176B2 (ja) * | 2015-04-06 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| JP6788177B2 (ja) * | 2015-05-14 | 2020-11-25 | セントラル硝子株式会社 | ドライエッチング方法、ドライエッチング剤及び半導体装置の製造方法 |
-
2016
- 2016-11-28 JP JP2016229880A patent/JP6323540B1/ja active Active
-
2017
- 2017-10-23 SG SG11201903354UA patent/SG11201903354UA/en unknown
- 2017-10-23 WO PCT/JP2017/038100 patent/WO2018096855A1/ja active Application Filing
- 2017-10-23 US US16/341,695 patent/US10872780B2/en active Active
- 2017-10-23 CN CN201780073050.4A patent/CN110036460B/zh active Active
- 2017-10-23 KR KR1020197018638A patent/KR102316409B1/ko active IP Right Grant
- 2017-11-02 TW TW106137860A patent/TWI631234B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190087590A (ko) | 2019-07-24 |
| JP2018088435A (ja) | 2018-06-07 |
| US20190287812A1 (en) | 2019-09-19 |
| JP6323540B1 (ja) | 2018-05-16 |
| TWI631234B (zh) | 2018-08-01 |
| CN110036460B (zh) | 2022-10-18 |
| WO2018096855A1 (ja) | 2018-05-31 |
| US10872780B2 (en) | 2020-12-22 |
| TW201823517A (zh) | 2018-07-01 |
| KR102316409B1 (ko) | 2021-10-22 |
| CN110036460A (zh) | 2019-07-19 |
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