SG11201903354UA - Dry etching agent composition and dry etching method - Google Patents

Dry etching agent composition and dry etching method

Info

Publication number
SG11201903354UA
SG11201903354UA SG11201903354UA SG11201903354UA SG11201903354UA SG 11201903354U A SG11201903354U A SG 11201903354UA SG 11201903354U A SG11201903354U A SG 11201903354UA SG 11201903354U A SG11201903354U A SG 11201903354UA SG 11201903354U A SG11201903354U A SG 11201903354UA
Authority
SG
Singapore
Prior art keywords
dry etching
agent composition
etching agent
tetrafluoropropene
hfo
Prior art date
Application number
SG11201903354UA
Inventor
Hiroyuki Oomori
Akifumi Yao
Isamu Mori
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of SG11201903354UA publication Critical patent/SG11201903354UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2205/00—Aspects relating to compounds used in compression type refrigeration systems
    • C09K2205/10—Components
    • C09K2205/12—Hydrocarbons
    • C09K2205/126—Unsaturated fluorinated hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2205/00—Aspects relating to compounds used in compression type refrigeration systems
    • C09K2205/10—Components
    • C09K2205/12—Hydrocarbons
    • C09K2205/128—Perfluorinated hydrocarbons

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

DRY ETCHING AGENT COMPOSITION AND DRY ETCHING METHOD Disclosed is the invention of a dry etching agent composition including: 1,3,3,3-tetrafluoropropene; and a hydrochlorofluorocarbon represented by CH.ClyF z (wherein x, y and z are integers of 1 or greater and x + y + z = 4), wherein a concentration of the hydrochlorofluorocarbon relative to 1,3,3,3-tetrafluoropropene is 3 volume ppm or greater to less than 10000 10 volume ppm, and a use of this dry etching agent composition. An object of the present invention is to suppress corrosion of storage container, pipes and an etching chamber by suppressing generation of acidic substances by improving storage stability of HFO-1234ze without losing excellent etching characteristics of HFO-1234ze. 15 FIG. 2 33
SG11201903354UA 2016-11-28 2017-10-23 Dry etching agent composition and dry etching method SG11201903354UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016229880A JP6323540B1 (en) 2016-11-28 2016-11-28 Dry etching composition and dry etching method
PCT/JP2017/038100 WO2018096855A1 (en) 2016-11-28 2017-10-23 Dry etching agent composition and dry etching method

Publications (1)

Publication Number Publication Date
SG11201903354UA true SG11201903354UA (en) 2019-05-30

Family

ID=62143868

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201903354UA SG11201903354UA (en) 2016-11-28 2017-10-23 Dry etching agent composition and dry etching method

Country Status (7)

Country Link
US (1) US10872780B2 (en)
JP (1) JP6323540B1 (en)
KR (1) KR102316409B1 (en)
CN (1) CN110036460B (en)
SG (1) SG11201903354UA (en)
TW (1) TWI631234B (en)
WO (1) WO2018096855A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7030648B2 (en) 2018-08-09 2022-03-07 キオクシア株式会社 Manufacturing method of semiconductor device and etching gas
WO2021153219A1 (en) * 2020-01-30 2021-08-05 昭和電工株式会社 Etching method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946548A (en) * 1988-04-29 1990-08-07 Toyoda Gosei Co., Ltd. Dry etching method for semiconductor
US5385633A (en) * 1990-03-29 1995-01-31 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted silicon etching using halocarbon ambients
US5310989A (en) * 1990-04-10 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted etching of III-V and II-VI semiconductor compounds using chlorofluorocarbon ambients
JPWO2009157325A1 (en) 2008-06-24 2011-12-08 三菱電機株式会社 Refrigeration cycle apparatus and air conditioner
JP2010083818A (en) 2008-09-30 2010-04-15 Central Glass Co Ltd Method of dehydrating 1,3,3,3-tetrafluoropropene
JP5590024B2 (en) 2009-02-26 2014-09-17 ダイキン工業株式会社 Refrigerant composition containing hydrofluoropropene with low global warming potential
JP5590023B2 (en) 2009-02-26 2014-09-17 ダイキン工業株式会社 Refrigerant composition containing hydrofluoropropene with low global warming potential
GB0918069D0 (en) * 2009-10-15 2009-12-02 Ineos Fluor Holdings Ltd Process
JP5434970B2 (en) 2010-07-12 2014-03-05 セントラル硝子株式会社 Dry etchant
JP4952834B2 (en) 2010-09-07 2012-06-13 ダイキン工業株式会社 Method for removing moisture from fluorine-containing compounds
JP5747684B2 (en) * 2010-09-14 2015-07-15 セントラル硝子株式会社 Method for dehydrating hydrofluorocarbon or hydrochlorofluorocarbon, and method for producing 1,3,3,3-tetrafluoropropene using the dehydration method
EP2842928A4 (en) 2012-04-27 2017-11-08 Asahi Glass Company, Limited Method for preservation of tetrafluoropropene and container for preservation of tetrafluoropropene
US9728422B2 (en) * 2015-01-23 2017-08-08 Central Glass Company, Limited Dry etching method
JP6788176B2 (en) * 2015-04-06 2020-11-25 セントラル硝子株式会社 Dry etching gas and dry etching method
JP6788177B2 (en) * 2015-05-14 2020-11-25 セントラル硝子株式会社 Dry etching method, dry etching agent and semiconductor device manufacturing method

Also Published As

Publication number Publication date
KR20190087590A (en) 2019-07-24
KR102316409B1 (en) 2021-10-22
CN110036460B (en) 2022-10-18
TWI631234B (en) 2018-08-01
US20190287812A1 (en) 2019-09-19
JP6323540B1 (en) 2018-05-16
JP2018088435A (en) 2018-06-07
WO2018096855A1 (en) 2018-05-31
CN110036460A (en) 2019-07-19
US10872780B2 (en) 2020-12-22
TW201823517A (en) 2018-07-01

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