SG11201901802RA - Amplifier with improved return loss and mismatch over gain modes - Google Patents

Amplifier with improved return loss and mismatch over gain modes

Info

Publication number
SG11201901802RA
SG11201901802RA SG11201901802RA SG11201901802RA SG11201901802RA SG 11201901802R A SG11201901802R A SG 11201901802RA SG 11201901802R A SG11201901802R A SG 11201901802RA SG 11201901802R A SG11201901802R A SG 11201901802RA SG 11201901802R A SG11201901802R A SG 11201901802RA
Authority
SG
Singapore
Prior art keywords
amplifier
return loss
gain modes
improved return
mismatch over
Prior art date
Application number
SG11201901802RA
Other languages
English (en)
Inventor
Junhyung Lee
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of SG11201901802RA publication Critical patent/SG11201901802RA/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/001—Digital control of analog signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
SG11201901802RA 2016-08-31 2017-08-30 Amplifier with improved return loss and mismatch over gain modes SG11201901802RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662382252P 2016-08-31 2016-08-31
PCT/US2017/049481 WO2018045096A1 (en) 2016-08-31 2017-08-30 Amplifier with improved return loss and mismatch over gain modes

Publications (1)

Publication Number Publication Date
SG11201901802RA true SG11201901802RA (en) 2019-03-28

Family

ID=61243635

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201901802RA SG11201901802RA (en) 2016-08-31 2017-08-30 Amplifier with improved return loss and mismatch over gain modes

Country Status (8)

Country Link
US (3) US10284160B2 (ja)
JP (3) JP2019530379A (ja)
KR (1) KR102551663B1 (ja)
CN (1) CN109845095B (ja)
DE (1) DE112017004369T5 (ja)
GB (4) GB2606088B (ja)
SG (1) SG11201901802RA (ja)
WO (1) WO2018045096A1 (ja)

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GB2606088B (en) * 2016-08-31 2023-02-08 Skyworks Solutions Inc Amplifier with improved return loss and mismatch over gain modes
JP2020022163A (ja) 2018-08-01 2020-02-06 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. 可変電力増幅器バイアスインピーダンス
US11824273B2 (en) * 2019-11-14 2023-11-21 Renesas Electronics America Inc. Minimizing impedance variation during passive phase shifting
KR102602350B1 (ko) * 2020-05-12 2023-11-17 한국전자통신연구원 구동 증폭 장치
CN115459793A (zh) * 2021-06-08 2022-12-09 开元通信技术（厦门）有限公司 一种射频装置
CN114421908B (zh) * 2022-03-28 2022-06-24 成都英思嘉半导体技术有限公司 用于光通信的低频补偿电路、模块、调制驱动器及芯片
US20230344392A1 (en) * 2022-04-22 2023-10-26 Qorvo Us, Inc. Low noise amplifier with parasitic capacitance neutralization
US20230344391A1 (en) * 2022-04-22 2023-10-26 Qorvo Us, Inc. Compact low noise amplifier system

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JP2002289790A (ja) * 2001-03-27 2002-10-04 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
JP2002344266A (ja) * 2001-05-18 2002-11-29 Matsushita Electric Ind Co Ltd 可変利得増幅器
JP4405113B2 (ja) * 2001-08-16 2010-01-27 パナソニック株式会社 利得可変増幅回路
US6806767B2 (en) * 2002-07-09 2004-10-19 Anadigics, Inc. Power amplifier with load switching circuit
US6977553B1 (en) * 2002-09-11 2005-12-20 Marvell International Ltd. Method and apparatus for an LNA with high linearity and improved gain control
JP4095398B2 (ja) * 2002-09-30 2008-06-04 株式会社東芝 増幅器及びこれを用いた無線通信装置
US6819179B2 (en) * 2003-04-16 2004-11-16 Agency For Science, Technology And Research Variable gain low noise amplifier
TWI230503B (en) * 2003-05-20 2005-04-01 Mediatek Inc Amplifier with fixed input impedance operated in various gain modes
KR100544958B1 (ko) * 2003-12-10 2006-01-24 한국전자통신연구원 대역 가변이 가능한 저잡음 증폭기
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Also Published As

Publication number Publication date
CN109845095A (zh) 2019-06-04
GB2605900B (en) 2023-02-08
GB2605900A (en) 2022-10-19
GB2605901A (en) 2022-10-19
US20210111684A1 (en) 2021-04-15
US20190334494A1 (en) 2019-10-31
WO2018045096A1 (en) 2018-03-08
GB201904242D0 (en) 2019-05-08
US20180062601A1 (en) 2018-03-01
GB2606088B (en) 2023-02-08
GB2569065A (en) 2019-06-05
GB202209037D0 (en) 2022-08-10
KR20190052020A (ko) 2019-05-15
GB2605901B (en) 2023-02-08
GB2569065B (en) 2022-12-07
GB202209033D0 (en) 2022-08-10
US10284160B2 (en) 2019-05-07
DE112017004369T5 (de) 2019-05-16
JP2019530379A (ja) 2019-10-17
JP2024020381A (ja) 2024-02-14
JP7386906B2 (ja) 2023-11-27
US10771029B2 (en) 2020-09-08
US11476819B2 (en) 2022-10-18
JP2022046730A (ja) 2022-03-23
GB2606088A (en) 2022-10-26
CN109845095B (zh) 2024-01-30
KR102551663B1 (ko) 2023-07-04
GB202209049D0 (en) 2022-08-10

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