SG11201901590SA - Composition for surface treatment - Google Patents
Composition for surface treatmentInfo
- Publication number
- SG11201901590SA SG11201901590SA SG11201901590SA SG11201901590SA SG11201901590SA SG 11201901590S A SG11201901590S A SG 11201901590SA SG 11201901590S A SG11201901590S A SG 11201901590SA SG 11201901590S A SG11201901590S A SG 11201901590SA SG 11201901590S A SG11201901590S A SG 11201901590SA
- Authority
- SG
- Singapore
- Prior art keywords
- polished
- composition
- surface treatment
- carbon atom
- main chain
- Prior art date
Links
- 238000004381 surface treatment Methods 0.000 title abstract 4
- 229910052799 carbon Inorganic materials 0.000 abstract 4
- 125000004432 carbon atom Chemical group C* 0.000 abstract 4
- 150000003839 salts Chemical class 0.000 abstract 2
- 229920003169 water-soluble polymer Polymers 0.000 abstract 2
- 125000000129 anionic group Chemical group 0.000 abstract 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract 1
- 125000000542 sulfonic acid group Chemical group 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
- C08L29/02—Homopolymers or copolymers of unsaturated alcohols
- C08L29/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L31/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid or of a haloformic acid; Compositions of derivatives of such polymers
- C08L31/02—Homopolymers or copolymers of esters of monocarboxylic acids
- C08L31/04—Homopolymers or copolymers of vinyl acetate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/02—Homopolymers or copolymers of acids; Metal or ammonium salts thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/24—Homopolymers or copolymers of amides or imides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
- C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
- C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/145—Side-chains containing sulfur
- C08G2261/1452—Side-chains containing sulfur containing sulfonyl or sulfonate-groups
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Emergency Medicine (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Detergent Compositions (AREA)
- Dental Preparations (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016184768 | 2016-09-21 | ||
PCT/JP2017/029003 WO2018055941A1 (ja) | 2016-09-21 | 2017-08-09 | 表面処理組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201901590SA true SG11201901590SA (en) | 2019-03-28 |
Family
ID=61690250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201901590SA SG11201901590SA (en) | 2016-09-21 | 2017-08-09 | Composition for surface treatment |
Country Status (7)
Country | Link |
---|---|
US (1) | US11326049B2 (zh) |
JP (1) | JP6880047B2 (zh) |
KR (1) | KR102305256B1 (zh) |
CN (1) | CN109716487B (zh) |
SG (1) | SG11201901590SA (zh) |
TW (1) | TWI805556B (zh) |
WO (1) | WO2018055941A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10920179B2 (en) * | 2016-11-10 | 2021-02-16 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning solution and method for cleaning substrate |
TWI841536B (zh) * | 2017-09-26 | 2024-05-11 | 日商福吉米股份有限公司 | 表面處理組合物、其製造方法以及使用此組合物的表面處理方法 |
KR102518676B1 (ko) * | 2018-11-16 | 2023-04-06 | 도아고세이가부시키가이샤 | 반도체 부품용 세정제 및 그 이용 |
US11702570B2 (en) * | 2019-03-27 | 2023-07-18 | Fujimi Incorporated | Polishing composition |
JP7267893B2 (ja) * | 2019-03-27 | 2023-05-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
CN112457930A (zh) * | 2019-09-06 | 2021-03-09 | 福吉米株式会社 | 表面处理组合物、表面处理组合物的制造方法、表面处理方法和半导体基板的制造方法 |
JP2022154513A (ja) * | 2021-03-30 | 2022-10-13 | 株式会社フジミインコーポレーテッド | 半導体基板の製造方法および当該製造方法より得られる半導体基板 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6740590B1 (en) * | 1999-03-18 | 2004-05-25 | Kabushiki Kaisha Toshiba | Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing |
SG91279A1 (en) * | 1999-06-09 | 2002-09-17 | Kuraray Co | Polyvinyl alcohol polymer production method and polyvinyl alcohol polymer |
JP4147369B2 (ja) | 1999-06-23 | 2008-09-10 | Jsr株式会社 | 半導体部品用洗浄剤および半導体部品の洗浄方法 |
US20020068454A1 (en) * | 2000-12-01 | 2002-06-06 | Applied Materials, Inc. | Method and composition for the removal of residual materials during substrate planarization |
TWI339680B (en) | 2002-02-19 | 2011-04-01 | Kanto Kagaku | Washing liquid composition for semiconductor substrate |
JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
JP2005303060A (ja) | 2004-04-13 | 2005-10-27 | Nitta Haas Inc | リンス研磨溶液 |
JP2006005246A (ja) | 2004-06-18 | 2006-01-05 | Fujimi Inc | リンス用組成物及びそれを用いたリンス方法 |
JP4613744B2 (ja) * | 2005-08-10 | 2011-01-19 | 株式会社Sumco | シリコンウェーハの洗浄方法 |
CN101346806B (zh) * | 2005-12-27 | 2010-09-29 | 日立化成工业株式会社 | 金属用研磨液以及被研磨膜的研磨方法 |
CN101496143B (zh) * | 2006-07-28 | 2011-04-06 | 昭和电工株式会社 | 研磨组合物 |
US20100086813A1 (en) * | 2006-08-30 | 2010-04-08 | Kyocera Corporation | Reaction Apparatus, Fuel Cell System and Electronic Device |
JP4777197B2 (ja) | 2006-09-11 | 2011-09-21 | 富士フイルム株式会社 | 洗浄液及びそれを用いた洗浄方法 |
US8614653B1 (en) * | 2007-10-04 | 2013-12-24 | Leah Salgado | Electronic display device for special events |
US8614053B2 (en) * | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
DE102009022477A1 (de) * | 2009-05-25 | 2010-12-16 | Universität Konstanz | Verfahren zum Texturieren einer Oberfläche eines Halbleitersubstrates sowie Vorrichtung zum Durchführen des Verfahrens |
US8765653B2 (en) * | 2009-07-07 | 2014-07-01 | Air Products And Chemicals, Inc. | Formulations and method for post-CMP cleaning |
JP4772156B1 (ja) * | 2010-07-05 | 2011-09-14 | 花王株式会社 | シリコンウエハ用研磨液組成物 |
KR101846597B1 (ko) * | 2010-10-01 | 2018-04-06 | 미쯔비시 케미컬 주식회사 | 반도체 디바이스용 기판의 세정액 및 세정 방법 |
JP5801594B2 (ja) * | 2011-04-18 | 2015-10-28 | 富士フイルム株式会社 | 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法 |
WO2012161135A1 (ja) * | 2011-05-26 | 2012-11-29 | 日立化成工業株式会社 | 半導体基板用パッシベーション膜形成用材料、半導体基板用パッシベーション膜及びその製造方法、並びに太陽電池素子及びその製造方法 |
JP6407503B2 (ja) * | 2011-06-14 | 2018-10-17 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2013118042A1 (en) * | 2012-02-06 | 2013-08-15 | Basf Se | A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and comprising no significant amounts of specific nitrogen-containing compounds |
JP6037416B2 (ja) * | 2013-06-07 | 2016-12-07 | 株式会社フジミインコーポレーテッド | シリコンウエハ研磨用組成物 |
JP5920840B2 (ja) * | 2013-09-30 | 2016-05-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびその製造方法 |
JP6373273B2 (ja) * | 2013-10-04 | 2018-08-15 | 株式会社Sumco | 研磨剤組成物、シリコンウェハー用研磨剤組成物、およびシリコンウェハー製品の製造方法 |
JP6245939B2 (ja) * | 2013-10-25 | 2017-12-13 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
US10319605B2 (en) * | 2016-05-10 | 2019-06-11 | Jsr Corporation | Semiconductor treatment composition and treatment method |
-
2017
- 2017-08-09 WO PCT/JP2017/029003 patent/WO2018055941A1/ja active Application Filing
- 2017-08-09 CN CN201780057387.6A patent/CN109716487B/zh active Active
- 2017-08-09 JP JP2018540908A patent/JP6880047B2/ja active Active
- 2017-08-09 US US16/330,034 patent/US11326049B2/en active Active
- 2017-08-09 SG SG11201901590SA patent/SG11201901590SA/en unknown
- 2017-08-09 KR KR1020197007768A patent/KR102305256B1/ko active IP Right Grant
- 2017-08-21 TW TW106128239A patent/TWI805556B/zh active
Also Published As
Publication number | Publication date |
---|---|
JPWO2018055941A1 (ja) | 2019-07-04 |
KR102305256B1 (ko) | 2021-09-29 |
WO2018055941A1 (ja) | 2018-03-29 |
CN109716487A (zh) | 2019-05-03 |
US20190203027A1 (en) | 2019-07-04 |
TWI805556B (zh) | 2023-06-21 |
JP6880047B2 (ja) | 2021-06-02 |
KR20190055089A (ko) | 2019-05-22 |
TW201814034A (zh) | 2018-04-16 |
US11326049B2 (en) | 2022-05-10 |
CN109716487B (zh) | 2023-12-01 |
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