SG11201810982UA - Standard cell circuits employing high aspect ratio voltage rails for reduced resistance - Google Patents

Standard cell circuits employing high aspect ratio voltage rails for reduced resistance

Info

Publication number
SG11201810982UA
SG11201810982UA SG11201810982UA SG11201810982UA SG11201810982UA SG 11201810982U A SG11201810982U A SG 11201810982UA SG 11201810982U A SG11201810982U A SG 11201810982UA SG 11201810982U A SG11201810982U A SG 11201810982UA SG 11201810982U A SG11201810982U A SG 11201810982UA
Authority
SG
Singapore
Prior art keywords
aspect ratio
high aspect
ratio voltage
international
standard cell
Prior art date
Application number
SG11201810982UA
Other languages
English (en)
Inventor
Jeffrey Xu
Mustafa Badaroglu
Da Yang
Periannan Chidambaram
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of SG11201810982UA publication Critical patent/SG11201810982UA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10Integrated device layouts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Layout of the interconnection structure
    • H01L23/5283Cross-sectional geometry
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00Computer-aided design [CAD]
    • G06F30/30Circuit design
    • G06F30/39Circuit design at the physical level
    • G06F30/392Floor-planning or layout, e.g. partitioning or placement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895Local interconnects; Local pads, as exemplified by patent document EP0896365
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/903Masterslice integrated circuits comprising field effect technology
    • H10D84/907CMOS gate arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90Masterslice integrated circuits
    • H10D84/903Masterslice integrated circuits comprising field effect technology
    • H10D84/907CMOS gate arrays
    • H10D84/968Macro-architecture
    • H10D84/974Layout specifications, i.e. inner core regions
    • H10D84/981Power supply lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Evolutionary Computation (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Medicinal Preparation (AREA)
SG11201810982UA 2016-07-27 2017-06-29 Standard cell circuits employing high aspect ratio voltage rails for reduced resistance SG11201810982UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662367230P 2016-07-27 2016-07-27
US15/634,039 US10090244B2 (en) 2016-07-27 2017-06-27 Standard cell circuits employing high aspect ratio voltage rails for reduced resistance
PCT/US2017/039870 WO2018022244A1 (en) 2016-07-27 2017-06-29 Standard cell circuits employing high aspect ratio voltage rails for reduced resistance

Publications (1)

Publication Number Publication Date
SG11201810982UA true SG11201810982UA (en) 2019-02-27

Family

ID=61010100

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201810982UA SG11201810982UA (en) 2016-07-27 2017-06-29 Standard cell circuits employing high aspect ratio voltage rails for reduced resistance

Country Status (9)

Country Link
US (1) US10090244B2 (enrdf_load_stackoverflow)
EP (1) EP3491668B1 (enrdf_load_stackoverflow)
JP (1) JP6985366B2 (enrdf_load_stackoverflow)
KR (2) KR102693848B1 (enrdf_load_stackoverflow)
CN (2) CN118039636A (enrdf_load_stackoverflow)
BR (1) BR112019001429B1 (enrdf_load_stackoverflow)
SG (1) SG11201810982UA (enrdf_load_stackoverflow)
TW (1) TWI742103B (enrdf_load_stackoverflow)
WO (1) WO2018022244A1 (enrdf_load_stackoverflow)

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US11017146B2 (en) * 2018-07-16 2021-05-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit and method of forming the same
EP3723127A1 (en) 2019-04-10 2020-10-14 IMEC vzw A standard cell device and a method for forming an interconnect structure for a standard cell device
US11444029B2 (en) 2020-02-24 2022-09-13 International Business Machines Corporation Back-end-of-line interconnect structures with varying aspect ratios
US11290109B1 (en) * 2020-09-23 2022-03-29 Qualcomm Incorporated Multibit multi-height cell to improve pin accessibility
US11778803B2 (en) * 2021-09-29 2023-10-03 Advanced Micro Devices, Inc. Cross FET SRAM cell layout
US20230128985A1 (en) * 2021-10-22 2023-04-27 International Business Machines Corporation Early backside first power delivery network

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JP3917683B2 (ja) * 1996-04-25 2007-05-23 株式会社ルネサステクノロジ 半導体集積回路装置
US6838713B1 (en) 1999-07-12 2005-01-04 Virage Logic Corporation Dual-height cell with variable width power rail architecture
US6483131B1 (en) 2000-01-11 2002-11-19 Texas Instruments Incorporated High density and high speed cell array architecture
JP2002110805A (ja) 2000-09-28 2002-04-12 Toshiba Corp 半導体デバイス
JP2003303885A (ja) * 2002-04-08 2003-10-24 Mitsubishi Electric Corp 集積回路及びその設計方法
US9009641B2 (en) * 2006-03-09 2015-04-14 Tela Innovations, Inc. Circuits with linear finfet structures
CN100559576C (zh) * 2006-10-24 2009-11-11 株式会社电装 半导体器件
JP4535136B2 (ja) * 2008-01-17 2010-09-01 ソニー株式会社 半導体集積回路、および、スイッチの配置配線方法
US8102059B2 (en) * 2008-03-15 2012-01-24 Kabushiki Kaisha Toshiba Interconnect structure for high frequency signal transmissions
JP2009260158A (ja) * 2008-04-21 2009-11-05 Toshiba Corp 半導体集積回路装置における配線方法及び半導体集積回路装置
US7821039B2 (en) 2008-06-23 2010-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Layout architecture for improving circuit performance
JP2011082223A (ja) * 2009-10-02 2011-04-21 Renesas Electronics Corp 半導体集積回路装置
US8212321B2 (en) * 2009-10-30 2012-07-03 Freescale Semiconductor, Inc. Semiconductor device with feedback control
US8336018B2 (en) 2010-06-09 2012-12-18 Lsi Corporation Power grid optimization
JP2012039073A (ja) * 2010-07-13 2012-02-23 Renesas Electronics Corp 半導体装置
US8513978B2 (en) 2011-03-30 2013-08-20 Synopsys, Inc. Power routing in standard cell designs
US9026977B2 (en) 2013-08-16 2015-05-05 Globalfoundries Inc. Power rail layout for dense standard cell library
US9070552B1 (en) 2014-05-01 2015-06-30 Qualcomm Incorporated Adaptive standard cell architecture and layout techniques for low area digital SoC
US9887209B2 (en) * 2014-05-15 2018-02-06 Qualcomm Incorporated Standard cell architecture with M1 layer unidirectional routing
KR102310122B1 (ko) * 2014-06-10 2021-10-08 삼성전자주식회사 논리 셀 및 이를 포함하는 집적회로 소자와 논리 셀의 제조 방법 및 집적회로 소자의 제조 방법
US9337149B2 (en) * 2014-07-29 2016-05-10 Samsung Electronics Co, Ltd. Semiconductor devices and methods of fabricating the same
US10510688B2 (en) * 2015-10-26 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Via rail solution for high power electromigration

Also Published As

Publication number Publication date
CN118039636A (zh) 2024-05-14
US20180033729A1 (en) 2018-02-01
EP3491668C0 (en) 2024-10-09
EP3491668B1 (en) 2024-10-09
CN109478551A (zh) 2019-03-15
KR102693848B1 (ko) 2024-08-08
CN109478551B (zh) 2024-03-26
JP6985366B2 (ja) 2021-12-22
BR112019001429A2 (enrdf_load_stackoverflow) 2019-07-23
JP2019522376A (ja) 2019-08-08
TWI742103B (zh) 2021-10-11
TW201812873A (zh) 2018-04-01
KR20230071197A (ko) 2023-05-23
KR20190030686A (ko) 2019-03-22
EP3491668A1 (en) 2019-06-05
BR112019001429B1 (pt) 2023-04-18
US10090244B2 (en) 2018-10-02
WO2018022244A1 (en) 2018-02-01

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