SG11201810733PA - Hybrid structure for surface acoustic wave device - Google Patents
Hybrid structure for surface acoustic wave deviceInfo
- Publication number
- SG11201810733PA SG11201810733PA SG11201810733PA SG11201810733PA SG11201810733PA SG 11201810733P A SG11201810733P A SG 11201810733PA SG 11201810733P A SG11201810733P A SG 11201810733PA SG 11201810733P A SG11201810733P A SG 11201810733PA SG 11201810733P A SG11201810733P A SG 11201810733PA
- Authority
- SG
- Singapore
- Prior art keywords
- hybrid structure
- acoustic wave
- wave device
- surface acoustic
- useful layer
- Prior art date
Links
- 238000010897 surface acoustic wave method Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1655030A FR3052298B1 (fr) | 2016-06-02 | 2016-06-02 | Structure hybride pour dispositif a ondes acoustiques de surface |
| PCT/FR2017/051339 WO2017207911A1 (fr) | 2016-06-02 | 2017-05-30 | Structure hybride pour dispositif a ondes acoustiques de surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201810733PA true SG11201810733PA (en) | 2018-12-28 |
Family
ID=56322239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201810733PA SG11201810733PA (en) | 2016-06-02 | 2017-05-30 | Hybrid structure for surface acoustic wave device |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US11800803B2 (fr) |
| EP (1) | EP3465784B1 (fr) |
| JP (1) | JP7057288B2 (fr) |
| KR (1) | KR102410318B1 (fr) |
| CN (1) | CN109219896B (fr) |
| FR (1) | FR3052298B1 (fr) |
| SG (1) | SG11201810733PA (fr) |
| WO (1) | WO2017207911A1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020098910A1 (fr) * | 2018-11-13 | 2020-05-22 | Huawei Technologies Co., Ltd. | Dispositif à ondes acoustiques de surface avec cristal phononique |
| DE102018131946A1 (de) | 2018-12-12 | 2020-06-18 | RF360 Europe GmbH | Dünnfilm-SAW-Vorrichtung |
| FR3091032B1 (fr) * | 2018-12-20 | 2020-12-11 | Soitec Silicon On Insulator | Procédé de transfert d’une couche superficielle sur des cavités |
| CN111490748A (zh) * | 2020-02-28 | 2020-08-04 | 武汉大学 | 一种薄膜体声波谐振器 |
| EP3896850A1 (fr) * | 2020-04-14 | 2021-10-20 | IQE plc | Structure en couches avec des régions de contrainte localisées dans les oxydes de terres rares cristallins |
| CN113629182A (zh) * | 2020-05-08 | 2021-11-09 | 济南晶正电子科技有限公司 | 一种tc-saw复合衬底及其制备方法 |
| CN112382559A (zh) * | 2020-11-13 | 2021-02-19 | 中国科学院上海微系统与信息技术研究所 | 一种异质薄膜结构及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004045181B4 (de) * | 2004-09-17 | 2016-02-04 | Epcos Ag | SAW-Bauelement mit reduziertem Temperaturgang und Verfahren zur Herstellung |
| JP2008219720A (ja) * | 2007-03-07 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイス |
| EP2246978B1 (fr) * | 2008-01-24 | 2018-01-03 | Murata Manufacturing Co. Ltd. | Procédé de fabrication d'un élément d'onde élastique |
| KR100912553B1 (ko) * | 2008-03-07 | 2009-08-19 | 오영주 | 압전기판 및 이를 이용한 ｓａｗ 필터 |
| JP5429200B2 (ja) * | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | 複合圧電基板の製造方法および圧電デバイス |
| JP5695394B2 (ja) * | 2010-11-17 | 2015-04-01 | 日本碍子株式会社 | 複合基板の製法 |
| JP5814774B2 (ja) * | 2010-12-22 | 2015-11-17 | 日本碍子株式会社 | 複合基板及び複合基板の製造方法 |
| CN106209007B (zh) * | 2010-12-24 | 2019-07-05 | 株式会社村田制作所 | 弹性波装置 |
| FR3004289B1 (fr) * | 2013-04-08 | 2015-05-15 | Soitec Silicon On Insulator | Composant a ondes acoustiques de surface et sa methode de fabrication |
-
2016
- 2016-06-02 FR FR1655030A patent/FR3052298B1/fr active Active
-
2017
- 2017-05-30 EP EP17732512.3A patent/EP3465784B1/fr active Active
- 2017-05-30 WO PCT/FR2017/051339 patent/WO2017207911A1/fr unknown
- 2017-05-30 KR KR1020197000090A patent/KR102410318B1/ko active IP Right Grant
- 2017-05-30 SG SG11201810733PA patent/SG11201810733PA/en unknown
- 2017-05-30 CN CN201780034366.2A patent/CN109219896B/zh active Active
- 2017-05-30 US US16/306,822 patent/US11800803B2/en active Active
- 2017-05-30 JP JP2018563171A patent/JP7057288B2/ja active Active
-
2023
- 2023-10-12 US US18/485,899 patent/US20240040930A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20240040930A1 (en) | 2024-02-01 |
| EP3465784B1 (fr) | 2020-04-08 |
| JP7057288B2 (ja) | 2022-04-19 |
| KR20190014072A (ko) | 2019-02-11 |
| EP3465784A1 (fr) | 2019-04-10 |
| US11800803B2 (en) | 2023-10-24 |
| WO2017207911A1 (fr) | 2017-12-07 |
| FR3052298A1 (fr) | 2017-12-08 |
| CN109219896A (zh) | 2019-01-15 |
| FR3052298B1 (fr) | 2018-07-13 |
| CN109219896B (zh) | 2022-11-22 |
| JP2019520753A (ja) | 2019-07-18 |
| US20190165252A1 (en) | 2019-05-30 |
| KR102410318B1 (ko) | 2022-06-17 |
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