CN109219896B - 用于表面声波器件的混合结构 - Google Patents
用于表面声波器件的混合结构 Download PDFInfo
- Publication number
- CN109219896B CN109219896B CN201780034366.2A CN201780034366A CN109219896B CN 109219896 B CN109219896 B CN 109219896B CN 201780034366 A CN201780034366 A CN 201780034366A CN 109219896 B CN109219896 B CN 109219896B
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- China
- Prior art keywords
- hybrid structure
- acoustic wave
- surface acoustic
- face
- piezoelectric layer
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- 238000002513 implantation Methods 0.000 claims description 15
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- 150000002500 ions Chemical class 0.000 claims description 7
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1655030A FR3052298B1 (fr) | 2016-06-02 | 2016-06-02 | Structure hybride pour dispositif a ondes acoustiques de surface |
FR1655030 | 2016-06-02 | ||
PCT/FR2017/051339 WO2017207911A1 (fr) | 2016-06-02 | 2017-05-30 | Structure hybride pour dispositif a ondes acoustiques de surface |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109219896A CN109219896A (zh) | 2019-01-15 |
CN109219896B true CN109219896B (zh) | 2022-11-22 |
Family
ID=56322239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780034366.2A Active CN109219896B (zh) | 2016-06-02 | 2017-05-30 | 用于表面声波器件的混合结构 |
Country Status (8)
Country | Link |
---|---|
US (2) | US11800803B2 (fr) |
EP (1) | EP3465784B1 (fr) |
JP (1) | JP7057288B2 (fr) |
KR (1) | KR102410318B1 (fr) |
CN (1) | CN109219896B (fr) |
FR (1) | FR3052298B1 (fr) |
SG (1) | SG11201810733PA (fr) |
WO (1) | WO2017207911A1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020098910A1 (fr) * | 2018-11-13 | 2020-05-22 | Huawei Technologies Co., Ltd. | Dispositif à ondes acoustiques de surface avec cristal phononique |
DE102018131946A1 (de) | 2018-12-12 | 2020-06-18 | RF360 Europe GmbH | Dünnfilm-SAW-Vorrichtung |
FR3091032B1 (fr) * | 2018-12-20 | 2020-12-11 | Soitec Silicon On Insulator | Procédé de transfert d’une couche superficielle sur des cavités |
CN111490748A (zh) * | 2020-02-28 | 2020-08-04 | 武汉大学 | 一种薄膜体声波谐振器 |
EP3896850A1 (fr) * | 2020-04-14 | 2021-10-20 | IQE plc | Structure en couches avec des régions de contrainte localisées dans les oxydes de terres rares cristallins |
CN113629182A (zh) * | 2020-05-08 | 2021-11-09 | 济南晶正电子科技有限公司 | 一种tc-saw复合衬底及其制备方法 |
CN112382559A (zh) * | 2020-11-13 | 2021-02-19 | 中国科学院上海微系统与信息技术研究所 | 一种异质薄膜结构及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008219720A (ja) * | 2007-03-07 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイス |
CN102361061A (zh) * | 2010-05-17 | 2012-02-22 | 株式会社村田制作所 | 复合压电基板的制造方法及压电器件 |
JP2012109399A (ja) * | 2010-11-17 | 2012-06-07 | Ngk Insulators Ltd | 複合基板及びその製法 |
CN105308860A (zh) * | 2013-04-08 | 2016-02-03 | Soitec公司 | 先进热补偿表面声波器件及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004045181B4 (de) * | 2004-09-17 | 2016-02-04 | Epcos Ag | SAW-Bauelement mit reduziertem Temperaturgang und Verfahren zur Herstellung |
EP2246978B1 (fr) * | 2008-01-24 | 2018-01-03 | Murata Manufacturing Co. Ltd. | Procédé de fabrication d'un élément d'onde élastique |
KR100912553B1 (ko) * | 2008-03-07 | 2009-08-19 | 오영주 | 압전기판 및 이를 이용한 saw 필터 |
JP5814774B2 (ja) * | 2010-12-22 | 2015-11-17 | 日本碍子株式会社 | 複合基板及び複合基板の製造方法 |
CN106209007B (zh) * | 2010-12-24 | 2019-07-05 | 株式会社村田制作所 | 弹性波装置 |
-
2016
- 2016-06-02 FR FR1655030A patent/FR3052298B1/fr active Active
-
2017
- 2017-05-30 EP EP17732512.3A patent/EP3465784B1/fr active Active
- 2017-05-30 WO PCT/FR2017/051339 patent/WO2017207911A1/fr unknown
- 2017-05-30 KR KR1020197000090A patent/KR102410318B1/ko active IP Right Grant
- 2017-05-30 SG SG11201810733PA patent/SG11201810733PA/en unknown
- 2017-05-30 CN CN201780034366.2A patent/CN109219896B/zh active Active
- 2017-05-30 US US16/306,822 patent/US11800803B2/en active Active
- 2017-05-30 JP JP2018563171A patent/JP7057288B2/ja active Active
-
2023
- 2023-10-12 US US18/485,899 patent/US20240040930A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008219720A (ja) * | 2007-03-07 | 2008-09-18 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイス |
CN102361061A (zh) * | 2010-05-17 | 2012-02-22 | 株式会社村田制作所 | 复合压电基板的制造方法及压电器件 |
JP2012109399A (ja) * | 2010-11-17 | 2012-06-07 | Ngk Insulators Ltd | 複合基板及びその製法 |
CN105308860A (zh) * | 2013-04-08 | 2016-02-03 | Soitec公司 | 先进热补偿表面声波器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20240040930A1 (en) | 2024-02-01 |
EP3465784B1 (fr) | 2020-04-08 |
JP7057288B2 (ja) | 2022-04-19 |
KR20190014072A (ko) | 2019-02-11 |
EP3465784A1 (fr) | 2019-04-10 |
US11800803B2 (en) | 2023-10-24 |
WO2017207911A1 (fr) | 2017-12-07 |
SG11201810733PA (en) | 2018-12-28 |
FR3052298A1 (fr) | 2017-12-08 |
CN109219896A (zh) | 2019-01-15 |
FR3052298B1 (fr) | 2018-07-13 |
JP2019520753A (ja) | 2019-07-18 |
US20190165252A1 (en) | 2019-05-30 |
KR102410318B1 (ko) | 2022-06-17 |
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