SG11201807093PA - Copper or copper alloy target containing argon or hydrogen - Google Patents

Copper or copper alloy target containing argon or hydrogen

Info

Publication number
SG11201807093PA
SG11201807093PA SG11201807093PA SG11201807093PA SG11201807093PA SG 11201807093P A SG11201807093P A SG 11201807093PA SG 11201807093P A SG11201807093P A SG 11201807093PA SG 11201807093P A SG11201807093P A SG 11201807093PA SG 11201807093P A SG11201807093P A SG 11201807093PA
Authority
SG
Singapore
Prior art keywords
copper
hydrogen
copper alloy
containing argon
target containing
Prior art date
Application number
SG11201807093PA
Other languages
English (en)
Inventor
Tomio Otsuki
Kenichi Nagata
Yasushi Morii
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201807093PA publication Critical patent/SG11201807093PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D1/00—Treatment of fused masses in the ladle or the supply runners before casting
    • B22D1/002—Treatment with gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D21/00—Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
    • B22D21/02—Casting exceedingly oxidisable non-ferrous metals, e.g. in inert atmosphere
    • B22D21/025—Casting heavy metals with high melting point, i.e. 1000 - 1600 degrees C, e.g. Co 1490 degrees C, Ni 1450 degrees C, Mn 1240 degrees C, Cu 1083 degrees C
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/01—Alloys based on copper with aluminium as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/05—Alloys based on copper with manganese as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
SG11201807093PA 2016-03-09 2017-03-07 Copper or copper alloy target containing argon or hydrogen SG11201807093PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016045611 2016-03-09
PCT/JP2017/008965 WO2017154890A1 (ja) 2016-03-09 2017-03-07 アルゴンまたは水素を含む銅及び銅合金ターゲット

Publications (1)

Publication Number Publication Date
SG11201807093PA true SG11201807093PA (en) 2018-09-27

Family

ID=59789501

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807093PA SG11201807093PA (en) 2016-03-09 2017-03-07 Copper or copper alloy target containing argon or hydrogen

Country Status (8)

Country Link
US (1) US20190085442A1 (ja)
EP (1) EP3428309A4 (ja)
JP (1) JP6567762B2 (ja)
KR (1) KR102192280B1 (ja)
CN (1) CN108699680A (ja)
SG (1) SG11201807093PA (ja)
TW (1) TW201804009A (ja)
WO (1) WO2017154890A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108085536A (zh) * 2018-01-26 2018-05-29 宁波华成阀门有限公司 一种易切削无铅黄铜及其制造方法
US20230287559A1 (en) * 2022-03-10 2023-09-14 Tosoh Smd, Inc. Low carbon defect copper-manganese sputtering target and method for producing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1949921A1 (de) 1969-10-03 1971-04-22 Hovalwerk Ag Ospelt Verfahren zum Betrieb einer Heizanlage und Heizanlage
JPH0813141A (ja) * 1994-06-28 1996-01-16 Riyouka Massey Kk スパッタリングターゲット及びその製造方法
JP3819487B2 (ja) 1996-08-16 2006-09-06 同和鉱業株式会社 半導体素子の製造方法
JP4197579B2 (ja) * 1997-12-24 2008-12-17 株式会社東芝 スパッタリングターゲットとそれを用いたＡｌ配線膜の製造方法および電子部品の製造方法
JP4237743B2 (ja) * 1997-12-24 2009-03-11 株式会社東芝 スパッタリングターゲット用インゴットの製造方法
US6398929B1 (en) 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
WO2003064722A1 (fr) * 2002-01-30 2003-08-07 Nikko Materials Company, Limited Cible de pulverisation d'alliage de cuivre et procede de fabrication de cette cible
JP2004193546A (ja) 2002-10-17 2004-07-08 Mitsubishi Materials Corp 半導体装置配線シード層形成用銅合金スパッタリングターゲット
JP2005034337A (ja) 2003-07-14 2005-02-10 Sanyu Plant Service Kk ダイオキシン類の分解方法
JP4756458B2 (ja) 2005-08-19 2011-08-24 三菱マテリアル株式会社 パーティクル発生の少ないＭｎ含有銅合金スパッタリングターゲット
US20090065354A1 (en) * 2007-09-12 2009-03-12 Kardokus Janine K Sputtering targets comprising a novel manufacturing design, methods of production and uses thereof
CN103025914B (zh) * 2010-07-30 2016-04-13 吉坤日矿日石金属株式会社 溅射靶和/或线圈及它们的制造方法
WO2014136673A1 (ja) * 2013-03-07 2014-09-12 Jx日鉱日石金属株式会社 銅合金スパッタリングターゲット

Also Published As

Publication number Publication date
KR102192280B1 (ko) 2020-12-17
EP3428309A1 (en) 2019-01-16
JP6567762B2 (ja) 2019-08-28
US20190085442A1 (en) 2019-03-21
TW201804009A (zh) 2018-02-01
CN108699680A (zh) 2018-10-23
EP3428309A4 (en) 2020-02-12
WO2017154890A1 (ja) 2017-09-14
KR20180111994A (ko) 2018-10-11
JPWO2017154890A1 (ja) 2018-07-05

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