SG11201807093PA - Copper or copper alloy target containing argon or hydrogen - Google Patents
Copper or copper alloy target containing argon or hydrogenInfo
- Publication number
- SG11201807093PA SG11201807093PA SG11201807093PA SG11201807093PA SG11201807093PA SG 11201807093P A SG11201807093P A SG 11201807093PA SG 11201807093P A SG11201807093P A SG 11201807093PA SG 11201807093P A SG11201807093P A SG 11201807093PA SG 11201807093P A SG11201807093P A SG 11201807093PA
- Authority
- SG
- Singapore
- Prior art keywords
- copper
- hydrogen
- copper alloy
- containing argon
- target containing
- Prior art date
Links
- 229910000881 Cu alloy Inorganic materials 0.000 title abstract 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 title abstract 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract 3
- 239000010949 copper Substances 0.000 title abstract 3
- 239000001257 hydrogen Substances 0.000 title abstract 3
- 229910052739 hydrogen Inorganic materials 0.000 title abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052786 argon Inorganic materials 0.000 title abstract 2
- 238000005477 sputtering target Methods 0.000 abstract 3
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D1/00—Treatment of fused masses in the ladle or the supply runners before casting
- B22D1/002—Treatment with gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D21/00—Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
- B22D21/02—Casting exceedingly oxidisable non-ferrous metals, e.g. in inert atmosphere
- B22D21/025—Casting heavy metals with high melting point, i.e. 1000 - 1600 degrees C, e.g. Co 1490 degrees C, Ni 1450 degrees C, Mn 1240 degrees C, Cu 1083 degrees C
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PCT/JP2017/008965 COPPER OR COPPER ALLOY TARGET CONTAINING ARGON OR HYDROGEN 5 Provided is a sputtering target formed from copper or a copper alloy, and the sputtering target contains either argon or hydrogen, or both, each in an amount of 1 wtppm or more and 10 wtppm or less. An object of the embodiment of the present io invention is to provide a copper or copper alloy sputtering target which is capable of stably maintaining discharge even under conditions such as low pressure and low gas flow rate where it is difficult to continuously maintain sputtering discharge.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016045611 | 2016-03-09 | ||
PCT/JP2017/008965 WO2017154890A1 (en) | 2016-03-09 | 2017-03-07 | Copper or copper alloy target containing argon or hydrogen |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201807093PA true SG11201807093PA (en) | 2018-09-27 |
Family
ID=59789501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201807093PA SG11201807093PA (en) | 2016-03-09 | 2017-03-07 | Copper or copper alloy target containing argon or hydrogen |
Country Status (8)
Country | Link |
---|---|
US (1) | US20190085442A1 (en) |
EP (1) | EP3428309A4 (en) |
JP (1) | JP6567762B2 (en) |
KR (1) | KR102192280B1 (en) |
CN (1) | CN108699680A (en) |
SG (1) | SG11201807093PA (en) |
TW (1) | TW201804009A (en) |
WO (1) | WO2017154890A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108085536A (en) * | 2018-01-26 | 2018-05-29 | 宁波华成阀门有限公司 | A kind of easy-cutting lead-free brass and its manufacturing method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1949921A1 (en) | 1969-10-03 | 1971-04-22 | Hovalwerk Ag Ospelt | Method for operating a heating system and heating system |
JPH0813141A (en) * | 1994-06-28 | 1996-01-16 | Riyouka Massey Kk | Sputtering target and its production |
JP3819487B2 (en) | 1996-08-16 | 2006-09-06 | 同和鉱業株式会社 | Manufacturing method of semiconductor device |
US6736947B1 (en) * | 1997-12-24 | 2004-05-18 | Kabushiki Kaisha Toshiba | Sputtering target, A1 interconnection film, and electronic component |
JP4237743B2 (en) * | 1997-12-24 | 2009-03-11 | 株式会社東芝 | Method for producing ingot for sputtering target |
US6398929B1 (en) | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
WO2003064722A1 (en) * | 2002-01-30 | 2003-08-07 | Nikko Materials Company, Limited | Copper alloy sputtering target and method for manufacturing the target |
JP2004193546A (en) | 2002-10-17 | 2004-07-08 | Mitsubishi Materials Corp | Copper alloy sputtering target for forming semiconductor device interconnect line seed layer |
JP2005034337A (en) | 2003-07-14 | 2005-02-10 | Sanyu Plant Service Kk | Decomposition method for dioxins or the like |
JP4756458B2 (en) * | 2005-08-19 | 2011-08-24 | 三菱マテリアル株式会社 | Mn-containing copper alloy sputtering target with less generation of particles |
US20090065354A1 (en) * | 2007-09-12 | 2009-03-12 | Kardokus Janine K | Sputtering targets comprising a novel manufacturing design, methods of production and uses thereof |
KR101291822B1 (en) * | 2010-07-30 | 2013-07-31 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Sputtering target and/or coil and process for producing same |
KR20170005146A (en) * | 2013-03-07 | 2017-01-11 | 제이엑스금속주식회사 | Copper alloy sputtering target |
-
2017
- 2017-03-07 KR KR1020187026266A patent/KR102192280B1/en active IP Right Grant
- 2017-03-07 SG SG11201807093PA patent/SG11201807093PA/en unknown
- 2017-03-07 JP JP2018504501A patent/JP6567762B2/en active Active
- 2017-03-07 EP EP17763230.4A patent/EP3428309A4/en not_active Withdrawn
- 2017-03-07 WO PCT/JP2017/008965 patent/WO2017154890A1/en active Application Filing
- 2017-03-07 CN CN201780015432.1A patent/CN108699680A/en active Pending
- 2017-03-07 US US16/082,967 patent/US20190085442A1/en not_active Abandoned
- 2017-03-09 TW TW106107674A patent/TW201804009A/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP3428309A4 (en) | 2020-02-12 |
JP6567762B2 (en) | 2019-08-28 |
US20190085442A1 (en) | 2019-03-21 |
TW201804009A (en) | 2018-02-01 |
EP3428309A1 (en) | 2019-01-16 |
JPWO2017154890A1 (en) | 2018-07-05 |
KR20180111994A (en) | 2018-10-11 |
CN108699680A (en) | 2018-10-23 |
WO2017154890A1 (en) | 2017-09-14 |
KR102192280B1 (en) | 2020-12-17 |
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