SG11201805567VA - Tin-containing dopant compositions, systems and methods for use in ion implantation systems - Google Patents
Tin-containing dopant compositions, systems and methods for use in ion implantation systemsInfo
- Publication number
- SG11201805567VA SG11201805567VA SG11201805567VA SG11201805567VA SG11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- dopant
- systems
- ion implantation
- rule
- Prior art date
Links
- 239000002019 doping agent Substances 0.000 title abstract 11
- 238000005468 ion implantation Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 title abstract 2
- 230000009977 dual effect Effects 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 208000035342 Isolated congenital onychodysplasia Diseases 0.000 abstract 1
- 239000003463 adsorbent Substances 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 201000010158 nonsyndromic congenital nail disorder 7 Diseases 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 150000003606 tin compounds Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2208—Compounds having tin linked only to carbon, hydrogen and/or halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2224—Compounds having one or more tin-oxygen linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Orthopedics, Nursing, And Contraception (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562273642P | 2015-12-31 | 2015-12-31 | |
| US15/386,308 US10221201B2 (en) | 2015-12-31 | 2016-12-21 | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
| PCT/US2016/068206 WO2017116945A1 (en) | 2015-12-31 | 2016-12-22 | Tin-containing dopant compositions, systems and methods for use in ion implantation systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201805567VA true SG11201805567VA (en) | 2018-07-30 |
Family
ID=57906976
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202007780YA SG10202007780YA (en) | 2015-12-31 | 2016-12-22 | Tin-containing dopant compositions, systems and methods for use in ion implantation systems |
| SG11201805567VA SG11201805567VA (en) | 2015-12-31 | 2016-12-22 | Tin-containing dopant compositions, systems and methods for use in ion implantation systems |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202007780YA SG10202007780YA (en) | 2015-12-31 | 2016-12-22 | Tin-containing dopant compositions, systems and methods for use in ion implantation systems |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10221201B2 (ko) |
| EP (1) | EP3398200B1 (ko) |
| JP (1) | JP6711917B2 (ko) |
| KR (1) | KR102228208B1 (ko) |
| CN (1) | CN108604524B (ko) |
| SG (2) | SG10202007780YA (ko) |
| TW (1) | TWI751130B (ko) |
| WO (1) | WO2017116945A1 (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
| US11098402B2 (en) * | 2017-08-22 | 2021-08-24 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
| US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
| WO2021232036A1 (en) * | 2020-05-11 | 2021-11-18 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
| CN111721599B (zh) * | 2020-06-23 | 2021-08-27 | 南京大学 | 一种原子级材料束流在真空中变温液体包覆收集方法与装置 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3472694A (en) * | 1961-05-26 | 1969-10-14 | Rca Corp | Deposition of crystalline niobium stannide |
| US3677814A (en) | 1970-10-26 | 1972-07-18 | Ppg Industries Inc | Process for forming electroconductive tin oxide films by pyrolyzation of alkyl and aryl tin fluorides |
| JPS5558363A (en) | 1978-10-20 | 1980-05-01 | Roy Gerald Gordon | Improved tin oxide coat |
| JPS6056066A (ja) | 1983-09-05 | 1985-04-01 | Nissin Electric Co Ltd | 薄膜形成装置 |
| JP3025122B2 (ja) * | 1992-12-28 | 2000-03-27 | キヤノン株式会社 | 光起電力素子及び発電システム |
| BE1008284A6 (nl) * | 1994-05-06 | 1996-03-05 | Printing International Naamloz | Drukinrichting. |
| DE19530434C2 (de) | 1995-08-18 | 2003-02-20 | Goldschmidt Ag Th | Verfahren zur Herstellung von Alkylzinnoxifluoriden |
| GB9522476D0 (en) | 1995-11-02 | 1996-01-03 | Boc Group Plc | Method and vessel for the storage of gas |
| US6006796A (en) | 1997-09-12 | 1999-12-28 | Ashland Inc. | Asphalt loading safety system |
| US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
| US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
| US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
| US6959724B2 (en) | 2002-07-01 | 2005-11-01 | Praxair Technology, Inc. | Multiple regulator vacuum delivery valve assembly |
| DE102004052580B4 (de) * | 2004-10-29 | 2008-09-25 | Advanced Micro Devices, Inc., Sunnyvale | Vorrichtung und Verfahren zum Zuführen von Vorstufengasen zu einer Implantationsanlage |
| US8110815B2 (en) * | 2006-06-12 | 2012-02-07 | Semequip, Inc. | Vapor delivery to devices under vacuum |
| US20080241805A1 (en) * | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| US7708028B2 (en) * | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
| US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
| US9093372B2 (en) * | 2012-03-30 | 2015-07-28 | Varian Semiconductor Equipment Associates, Inc. | Technique for processing a substrate |
| JP2014044829A (ja) | 2012-08-24 | 2014-03-13 | Univ Of Tokyo | 微小構造物の製造装置、及び製造方法 |
| CN104813095B (zh) * | 2012-09-21 | 2018-05-01 | 恩特格里斯公司 | 压力调节流体贮存和输送容器的抗尖峰压力管理 |
| US9165773B2 (en) * | 2013-05-28 | 2015-10-20 | Praxair Technology, Inc. | Aluminum dopant compositions, delivery package and method of use |
| US20150024899A1 (en) | 2013-07-18 | 2015-01-22 | Dana Limited | Variable-radius contact geometry for traction drives |
| CN105813711B (zh) | 2013-08-05 | 2019-09-24 | 纽麦特科技公司 | 用于电子气体储存的金属有机骨架材料 |
| US9852887B2 (en) | 2013-08-23 | 2017-12-26 | Advanced Ion Beam Technology, Inc. | Ion source of an ion implanter |
| US9427722B2 (en) | 2013-10-16 | 2016-08-30 | Numat Technologies, Inc. | Metal-organic frameworks for oxygen storage and air separation |
| US9570271B2 (en) | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
| WO2015146749A1 (ja) | 2014-03-26 | 2015-10-01 | 東レ株式会社 | 半導体装置の製造方法及び半導体装置 |
| KR20170019416A (ko) * | 2014-06-13 | 2017-02-21 | 엔테그리스, 아이엔씨. | 압력-조절형 유체 저장 및 분배 용기의 흡착제-기반의 압력 안정화 |
| US9925516B2 (en) | 2014-12-02 | 2018-03-27 | Numat Technologies, Inc. | Formation of high surface area metal-organic frameworks |
| KR102301071B1 (ko) | 2014-12-04 | 2021-09-14 | 누맷 테크놀로지스, 인코포레이티드 | 전자 가스의 저감 및 정제 및 탄화수소 스트림으로부터의 수은제거를 위한 다공성 중합체 |
| US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
-
2016
- 2016-12-21 US US15/386,308 patent/US10221201B2/en active Active
- 2016-12-22 JP JP2018534672A patent/JP6711917B2/ja active Active
- 2016-12-22 EP EP16831601.6A patent/EP3398200B1/en active Active
- 2016-12-22 WO PCT/US2016/068206 patent/WO2017116945A1/en active Application Filing
- 2016-12-22 CN CN201680081428.0A patent/CN108604524B/zh active Active
- 2016-12-22 SG SG10202007780YA patent/SG10202007780YA/en unknown
- 2016-12-22 KR KR1020187020606A patent/KR102228208B1/ko active IP Right Grant
- 2016-12-22 SG SG11201805567VA patent/SG11201805567VA/en unknown
- 2016-12-27 TW TW105143385A patent/TWI751130B/zh active
-
2019
- 2019-01-16 US US16/248,952 patent/US10633402B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201805294A (zh) | 2018-02-16 |
| EP3398200B1 (en) | 2021-04-21 |
| JP6711917B2 (ja) | 2020-06-17 |
| US10633402B2 (en) | 2020-04-28 |
| SG10202007780YA (en) | 2020-09-29 |
| KR102228208B1 (ko) | 2021-03-17 |
| US10221201B2 (en) | 2019-03-05 |
| US20170190723A1 (en) | 2017-07-06 |
| EP3398200A1 (en) | 2018-11-07 |
| US20190144471A1 (en) | 2019-05-16 |
| KR20180134839A (ko) | 2018-12-19 |
| WO2017116945A1 (en) | 2017-07-06 |
| JP2019507938A (ja) | 2019-03-22 |
| CN108604524B (zh) | 2021-05-25 |
| CN108604524A (zh) | 2018-09-28 |
| TWI751130B (zh) | 2022-01-01 |
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