SG11201805567VA - Tin-containing dopant compositions, systems and methods for use in ion implantation systems - Google Patents

Tin-containing dopant compositions, systems and methods for use in ion implantation systems

Info

Publication number
SG11201805567VA
SG11201805567VA SG11201805567VA SG11201805567VA SG11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA
Authority
SG
Singapore
Prior art keywords
international
dopant
systems
ion implantation
rule
Prior art date
Application number
SG11201805567VA
Inventor
Aaron Reinicker
Ashwini Sinha
Qiong Guo
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of SG11201805567VA publication Critical patent/SG11201805567VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2208—Compounds having tin linked only to carbon, hydrogen and/or halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2224—Compounds having one or more tin-oxygen linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Orthopedics, Nursing, And Contraception (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 1111111101111011101010111110101111101110111011111011110111111101111101111011111 International Bureau ... .... ..Yj (10) International Publication Number ......,,.../ (43) International Publication Date WO 2017/116945 Al 6 July 2017 (06.07.2017) WI P0 I P CT (51) International Patent Classification: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, H01J 37/317 (2006.01) C23C 14/48 (2006.01) KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, COIF 7/22 (2006.01) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NE NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (21) International Application Number: RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, PCT/US2016/068206 TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (22) International Filing Date: ZA, ZM, ZW. 22 December 2016 (22.12.2016) (84) Designated States (unless otherwise indicated, for every (25) Filing Language: English kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, (26) Publication Language: English TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (30) Priority Data: TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, 62/273,642 31 December 2015 (31.12.2015) US DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, 15/386,308 21 December 2016 (21.12.2016) US LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, (71) Applicant: PRAXAIR TECHNOLOGY, INC. [US/US]; GW, KM, ML, MR, NE, SN, TD, TG). 10 Riverview Drive, Danbury, CT 06473 (US). Declarations under Rule 4.17: (72) Inventors: REINICKER, Aaron; 347 Maryland Street, — as to applicant's entitlement to apply for and be granted a Buffalo, NY 14201 (US). SINHA, Ashwini, K.; 72 Planta- tion Court, East Amherst, NY 14051 (US). GUO, Qiong; patent (Rule 4.17(0) 5538 Meadowglen Drive, Clarence Center, NY 14032 — as to the applicant's entitlement to claim the priority of the (US). earlier application (Rule 4.17(iii)) Agents: DALAL, Nilay, S. et al.; Praxair, Inc., 10 River- Published: (74) view Drive, Danbury, CT 06810 (US). — with international search report (Art. 21(3)) Designated States (unless otherwise indicated, for every _ before the expiration of the time limit for amending the (81) kind of national protection available): AE, AG, AL, AM, claims and to be republished in the event of receipt of AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, amendments (Rule 48.2(h)) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, Title: TIN-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS FOR USE IN ION IMPLANTATION (54) . SYSTEMS Dual port valve Dual port valve Dual port valve R-- Use port Fill port v ie- Use port Effiport Fill port & r Use port Check valve a Check valve Chalk valve COrider -''' Cylinder Cylinder-1& 0 -4 \" - -Sn containing dopant material @ Sn containing Adsorbent with Sn dopant material dopant material gas phase liquid 1-1 Case 1 Case 2 Case 3 .4 kin FIG. 4a FIG. 4b FIG. 4c 71' Examples of storage and Examples of storage and Examples of storage and 01 delivery package for three delivery package for three delivery package for three separate states of Sn separate states of Sn separate states of Sn 1-1 dopant source dopant source dopant source 1-1 ---..„ IC - - 1-1 C (57) : A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A ei suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include en. ) stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably de - .,- livered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.
SG11201805567VA 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems SG11201805567VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562273642P 2015-12-31 2015-12-31
US15/386,308 US10221201B2 (en) 2015-12-31 2016-12-21 Tin-containing dopant compositions, systems and methods for use in ION implantation systems
PCT/US2016/068206 WO2017116945A1 (en) 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems

Publications (1)

Publication Number Publication Date
SG11201805567VA true SG11201805567VA (en) 2018-07-30

Family

ID=57906976

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201805567VA SG11201805567VA (en) 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems
SG10202007780YA SG10202007780YA (en) 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202007780YA SG10202007780YA (en) 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems

Country Status (8)

Country Link
US (2) US10221201B2 (en)
EP (1) EP3398200B1 (en)
JP (1) JP6711917B2 (en)
KR (1) KR102228208B1 (en)
CN (1) CN108604524B (en)
SG (2) SG11201805567VA (en)
TW (1) TWI751130B (en)
WO (1) WO2017116945A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10221201B2 (en) * 2015-12-31 2019-03-05 Praxair Technology, Inc. Tin-containing dopant compositions, systems and methods for use in ION implantation systems
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
US11098402B2 (en) * 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
IL297179A (en) * 2020-05-11 2022-12-01 Praxair Technology Inc Storage and delivery of antimony-containing materials to an ion implanter
CN111721599B (en) * 2020-06-23 2021-08-27 南京大学 Atomic-level material beam variable-temperature liquid coating collection method and device in vacuum

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Also Published As

Publication number Publication date
JP2019507938A (en) 2019-03-22
WO2017116945A1 (en) 2017-07-06
TW201805294A (en) 2018-02-16
CN108604524A (en) 2018-09-28
US10633402B2 (en) 2020-04-28
US20170190723A1 (en) 2017-07-06
TWI751130B (en) 2022-01-01
US20190144471A1 (en) 2019-05-16
EP3398200A1 (en) 2018-11-07
SG10202007780YA (en) 2020-09-29
EP3398200B1 (en) 2021-04-21
JP6711917B2 (en) 2020-06-17
KR102228208B1 (en) 2021-03-17
CN108604524B (en) 2021-05-25
KR20180134839A (en) 2018-12-19
US10221201B2 (en) 2019-03-05

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