SG11201805567VA - Tin-containing dopant compositions, systems and methods for use in ion implantation systems - Google Patents

Tin-containing dopant compositions, systems and methods for use in ion implantation systems

Info

Publication number
SG11201805567VA
SG11201805567VA SG11201805567VA SG11201805567VA SG11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA
Authority
SG
Singapore
Prior art keywords
international
dopant
systems
ion implantation
rule
Prior art date
Application number
SG11201805567VA
Inventor
Aaron Reinicker
Ashwini Sinha
Qiong Guo
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Publication of SG11201805567VA publication Critical patent/SG11201805567VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2208—Compounds having tin linked only to carbon, hydrogen and/or halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2224—Compounds having one or more tin-oxygen linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Orthopedics, Nursing, And Contraception (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 1111111101111011101010111110101111101110111011111011110111111101111101111011111 International Bureau ... .... ..Yj (10) International Publication Number ......,,.../ (43) International Publication Date WO 2017/116945 Al 6 July 2017 (06.07.2017) WI P0 I P CT (51) International Patent Classification: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, H01J 37/317 (2006.01) C23C 14/48 (2006.01) KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, COIF 7/22 (2006.01) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NE NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (21) International Application Number: RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, PCT/US2016/068206 TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (22) International Filing Date: ZA, ZM, ZW. 22 December 2016 (22.12.2016) (84) Designated States (unless otherwise indicated, for every (25) Filing Language: English kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, (26) Publication Language: English TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (30) Priority Data: TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, 62/273,642 31 December 2015 (31.12.2015) US DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, 15/386,308 21 December 2016 (21.12.2016) US LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, (71) Applicant: PRAXAIR TECHNOLOGY, INC. [US/US]; GW, KM, ML, MR, NE, SN, TD, TG). 10 Riverview Drive, Danbury, CT 06473 (US). Declarations under Rule 4.17: (72) Inventors: REINICKER, Aaron; 347 Maryland Street, — as to applicant's entitlement to apply for and be granted a Buffalo, NY 14201 (US). SINHA, Ashwini, K.; 72 Planta- tion Court, East Amherst, NY 14051 (US). GUO, Qiong; patent (Rule 4.17(0) 5538 Meadowglen Drive, Clarence Center, NY 14032 — as to the applicant's entitlement to claim the priority of the (US). earlier application (Rule 4.17(iii)) Agents: DALAL, Nilay, S. et al.; Praxair, Inc., 10 River- Published: (74) view Drive, Danbury, CT 06810 (US). — with international search report (Art. 21(3)) Designated States (unless otherwise indicated, for every _ before the expiration of the time limit for amending the (81) kind of national protection available): AE, AG, AL, AM, claims and to be republished in the event of receipt of AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, amendments (Rule 48.2(h)) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, Title: TIN-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS FOR USE IN ION IMPLANTATION (54) . SYSTEMS Dual port valve Dual port valve Dual port valve R-- Use port Fill port v ie- Use port Effiport Fill port & r Use port Check valve a Check valve Chalk valve COrider -''' Cylinder Cylinder-1& 0 -4 \" - -Sn containing dopant material @ Sn containing Adsorbent with Sn dopant material dopant material gas phase liquid 1-1 Case 1 Case 2 Case 3 .4 kin FIG. 4a FIG. 4b FIG. 4c 71' Examples of storage and Examples of storage and Examples of storage and 01 delivery package for three delivery package for three delivery package for three separate states of Sn separate states of Sn separate states of Sn 1-1 dopant source dopant source dopant source 1-1 ---..„ IC - - 1-1 C (57) : A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A ei suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include en. ) stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably de - .,- livered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.
SG11201805567VA 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems SG11201805567VA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562273642P 2015-12-31 2015-12-31
US15/386,308 US10221201B2 (en) 2015-12-31 2016-12-21 Tin-containing dopant compositions, systems and methods for use in ION implantation systems
PCT/US2016/068206 WO2017116945A1 (en) 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems

Publications (1)

Publication Number Publication Date
SG11201805567VA true SG11201805567VA (en) 2018-07-30

Family

ID=57906976

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10202007780YA SG10202007780YA (en) 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems
SG11201805567VA SG11201805567VA (en) 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10202007780YA SG10202007780YA (en) 2015-12-31 2016-12-22 Tin-containing dopant compositions, systems and methods for use in ion implantation systems

Country Status (8)

Country Link
US (2) US10221201B2 (en)
EP (1) EP3398200B1 (en)
JP (1) JP6711917B2 (en)
KR (1) KR102228208B1 (en)
CN (1) CN108604524B (en)
SG (2) SG10202007780YA (en)
TW (1) TWI751130B (en)
WO (1) WO2017116945A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10221201B2 (en) * 2015-12-31 2019-03-05 Praxair Technology, Inc. Tin-containing dopant compositions, systems and methods for use in ION implantation systems
US11098402B2 (en) * 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
WO2021232036A1 (en) * 2020-05-11 2021-11-18 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
CN111721599B (en) * 2020-06-23 2021-08-27 南京大学 Atomic-level material beam variable-temperature liquid coating collection method and device in vacuum

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472694A (en) * 1961-05-26 1969-10-14 Rca Corp Deposition of crystalline niobium stannide
US3677814A (en) 1970-10-26 1972-07-18 Ppg Industries Inc Process for forming electroconductive tin oxide films by pyrolyzation of alkyl and aryl tin fluorides
BR7806939A (en) 1978-10-20 1980-04-22 Gordon Roy Gerald PROCESS FOR THE DEPOSITION OF TRANSPARENT STANIC OXIDE FILMS ON A HEATED SUBSTRATE, ARTICLE AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION
JPS6056066A (en) 1983-09-05 1985-04-01 Nissin Electric Co Ltd Thin film forming device
JP3025122B2 (en) * 1992-12-28 2000-03-27 キヤノン株式会社 Photovoltaic element and power generation system
BE1008284A6 (en) * 1994-05-06 1996-03-05 Printing International Naamloz PRINTING DEVICE.
DE19530434C2 (en) 1995-08-18 2003-02-20 Goldschmidt Ag Th Process for the preparation of alkyltin oxyfluorides
GB9522476D0 (en) 1995-11-02 1996-01-03 Boc Group Plc Method and vessel for the storage of gas
US6006796A (en) 1997-09-12 1999-12-28 Ashland Inc. Asphalt loading safety system
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
US6959724B2 (en) 2002-07-01 2005-11-01 Praxair Technology, Inc. Multiple regulator vacuum delivery valve assembly
DE102004052580B4 (en) * 2004-10-29 2008-09-25 Advanced Micro Devices, Inc., Sunnyvale Apparatus and method for supplying precursor gases to an implantation facility
EP2026889A4 (en) * 2006-06-12 2011-09-07 Semequip Inc Vapor delivery to devices under vacuum
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US7708028B2 (en) * 2006-12-08 2010-05-04 Praxair Technology, Inc. Fail-safe vacuum actuated valve for high pressure delivery systems
US7905247B2 (en) 2008-06-20 2011-03-15 Praxair Technology, Inc. Vacuum actuated valve for high capacity storage and delivery systems
US9093372B2 (en) * 2012-03-30 2015-07-28 Varian Semiconductor Equipment Associates, Inc. Technique for processing a substrate
JP2014044829A (en) 2012-08-24 2014-03-13 Univ Of Tokyo Manufacturing apparatus and manufacturing method of microstructure
US9897257B2 (en) * 2012-09-21 2018-02-20 Entegris, Inc. Anti-spike pressure management of pressure-regulated fluid storage and delivery vessels
US9165773B2 (en) * 2013-05-28 2015-10-20 Praxair Technology, Inc. Aluminum dopant compositions, delivery package and method of use
US20150024899A1 (en) 2013-07-18 2015-01-22 Dana Limited Variable-radius contact geometry for traction drives
MY182759A (en) 2013-08-05 2021-02-05 Numat Tech Inc Metal organic frameworks for electronic gas storage
US9852887B2 (en) 2013-08-23 2017-12-26 Advanced Ion Beam Technology, Inc. Ion source of an ion implanter
US9427722B2 (en) 2013-10-16 2016-08-30 Numat Technologies, Inc. Metal-organic frameworks for oxygen storage and air separation
US9570271B2 (en) 2014-03-03 2017-02-14 Praxair Technology, Inc. Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
WO2015146749A1 (en) 2014-03-26 2015-10-01 東レ株式会社 Method for manufacturing semiconductor device and semiconductor device
WO2015191929A1 (en) * 2014-06-13 2015-12-17 Entegris, Inc. Adsorbent-based pressure stabilzation of pressure-regulated fluid storage and dispensing vessels
US9925516B2 (en) 2014-12-02 2018-03-27 Numat Technologies, Inc. Formation of high surface area metal-organic frameworks
EP3227017B1 (en) 2014-12-04 2021-02-03 Numat Technologies Inc. Method of abating or removing an electronic gas from an electronic gas containing effluent
US10221201B2 (en) * 2015-12-31 2019-03-05 Praxair Technology, Inc. Tin-containing dopant compositions, systems and methods for use in ION implantation systems

Also Published As

Publication number Publication date
US20190144471A1 (en) 2019-05-16
KR20180134839A (en) 2018-12-19
US10221201B2 (en) 2019-03-05
CN108604524B (en) 2021-05-25
US20170190723A1 (en) 2017-07-06
JP2019507938A (en) 2019-03-22
CN108604524A (en) 2018-09-28
JP6711917B2 (en) 2020-06-17
US10633402B2 (en) 2020-04-28
EP3398200B1 (en) 2021-04-21
SG10202007780YA (en) 2020-09-29
EP3398200A1 (en) 2018-11-07
TWI751130B (en) 2022-01-01
KR102228208B1 (en) 2021-03-17
TW201805294A (en) 2018-02-16
WO2017116945A1 (en) 2017-07-06

Similar Documents

Publication Publication Date Title
SG11201805567VA (en) Tin-containing dopant compositions, systems and methods for use in ion implantation systems
SG11201901206SA (en) Trimer stabilizing hiv envelope protein mutations
SG11201806793TA (en) Fillable vaporizer cartridge and method of filling
SG11201807188VA (en) Modified cells for immunotherapy
SG11201805792PA (en) Chimeric proteins and methods of regulating gene expression
SG11201807003UA (en) Smc combination therapy for the treatment of cancer
SG11201804729RA (en) Methods and compositions for treating a serpinc1-associated disorder
SG11201903514VA (en) Novel cd47 monoclonal antibodies and uses thereof
SG11201808799SA (en) Amine-substituted aryl or heteroaryl compounds as ehmt1 and ehmt2 inhibitors
SG11201908719QA (en) Biomarkers and car t cell therapies with enhanced efficacy
SG11201908391XA (en) Methods for modulating an immune response
SG11201804086VA (en) Methods and compositions for nucleic acid analysis
SG11201811600PA (en) Pseudotyped oncolytic viral delivery of therapeutic polypeptides
SG11201808682XA (en) Silicone atoms containing ivacaftor analogues
SG11201808622SA (en) Chimeric receptors to flt3 and methods of use thereof
SG11201901020RA (en) Anti-siglec-7 antibodies for the treatment of cancer
SG11201909454QA (en) Container-based virtual camera rotation
SG11201811431VA (en) Multispecific antibodies against cd40 and cd137
SG11201907804QA (en) Pharmaceutical composition comprising selexipag
SG11201408095XA (en) Fibroblast growth factor 21 proteins
SG11201808237UA (en) Substituted indole compound derivatives as dengue viral replication inhibitors
SG11201811831SA (en) Compositions and methods for stabilizing flaviviruses with improved formulations
SG11201807972YA (en) Combinations of lsd1 inhibitors for the treatment of hematological malignancies
SG11201808108XA (en) Synthesis of indazoles
SG11201803934YA (en) Compositions and methods for expression of multiple biologically active polypeptides from a single vector for treatment of cardiac conditions and other pathologies