SG11201805567VA - Tin-containing dopant compositions, systems and methods for use in ion implantation systems - Google Patents
Tin-containing dopant compositions, systems and methods for use in ion implantation systemsInfo
- Publication number
- SG11201805567VA SG11201805567VA SG11201805567VA SG11201805567VA SG11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA SG 11201805567V A SG11201805567V A SG 11201805567VA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- dopant
- systems
- ion implantation
- rule
- Prior art date
Links
- 239000002019 doping agent Substances 0.000 title abstract 11
- 238000005468 ion implantation Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 title abstract 2
- 230000009977 dual effect Effects 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 208000035342 Isolated congenital onychodysplasia Diseases 0.000 abstract 1
- 239000003463 adsorbent Substances 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 201000010158 nonsyndromic congenital nail disorder 7 Diseases 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 150000003606 tin compounds Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2208—Compounds having tin linked only to carbon, hydrogen and/or halogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2224—Compounds having one or more tin-oxygen linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Orthopedics, Nursing, And Contraception (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 1111111101111011101010111110101111101110111011111011110111111101111101111011111 International Bureau ... .... ..Yj (10) International Publication Number ......,,.../ (43) International Publication Date WO 2017/116945 Al 6 July 2017 (06.07.2017) WI P0 I P CT (51) International Patent Classification: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, H01J 37/317 (2006.01) C23C 14/48 (2006.01) KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, COIF 7/22 (2006.01) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NE NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, (21) International Application Number: RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, PCT/US2016/068206 TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (22) International Filing Date: ZA, ZM, ZW. 22 December 2016 (22.12.2016) (84) Designated States (unless otherwise indicated, for every (25) Filing Language: English kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, (26) Publication Language: English TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (30) Priority Data: TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, 62/273,642 31 December 2015 (31.12.2015) US DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, 15/386,308 21 December 2016 (21.12.2016) US LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, (71) Applicant: PRAXAIR TECHNOLOGY, INC. [US/US]; GW, KM, ML, MR, NE, SN, TD, TG). 10 Riverview Drive, Danbury, CT 06473 (US). Declarations under Rule 4.17: (72) Inventors: REINICKER, Aaron; 347 Maryland Street, — as to applicant's entitlement to apply for and be granted a Buffalo, NY 14201 (US). SINHA, Ashwini, K.; 72 Planta- tion Court, East Amherst, NY 14051 (US). GUO, Qiong; patent (Rule 4.17(0) 5538 Meadowglen Drive, Clarence Center, NY 14032 — as to the applicant's entitlement to claim the priority of the (US). earlier application (Rule 4.17(iii)) Agents: DALAL, Nilay, S. et al.; Praxair, Inc., 10 River- Published: (74) view Drive, Danbury, CT 06810 (US). — with international search report (Art. 21(3)) Designated States (unless otherwise indicated, for every _ before the expiration of the time limit for amending the (81) kind of national protection available): AE, AG, AL, AM, claims and to be republished in the event of receipt of AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, amendments (Rule 48.2(h)) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, Title: TIN-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS FOR USE IN ION IMPLANTATION (54) . SYSTEMS Dual port valve Dual port valve Dual port valve R-- Use port Fill port v ie- Use port Effiport Fill port & r Use port Check valve a Check valve Chalk valve COrider -''' Cylinder Cylinder-1& 0 -4 \" - -Sn containing dopant material @ Sn containing Adsorbent with Sn dopant material dopant material gas phase liquid 1-1 Case 1 Case 2 Case 3 .4 kin FIG. 4a FIG. 4b FIG. 4c 71' Examples of storage and Examples of storage and Examples of storage and 01 delivery package for three delivery package for three delivery package for three separate states of Sn separate states of Sn separate states of Sn 1-1 dopant source dopant source dopant source 1-1 ---..„ IC - - 1-1 C (57) : A novel method and system for using certain tin compounds as dopant sources for ion implantation are provided. A ei suitable tin-containing dopant source material is selected based on one or more certain attributes. Some of these attributes include en. ) stability at room temperature; sufficient vapor pressure to be delivered from its source supply to an ion chamber and, the ability to produce a suitable beam current for ion implantation to achieve the required implant Sn dosage. The dopant source is preferably de - .,- livered from a source supply that actuates under sub atmospheric conditions to enhance the safety and reliability during operation.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562273642P | 2015-12-31 | 2015-12-31 | |
US15/386,308 US10221201B2 (en) | 2015-12-31 | 2016-12-21 | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
PCT/US2016/068206 WO2017116945A1 (en) | 2015-12-31 | 2016-12-22 | Tin-containing dopant compositions, systems and methods for use in ion implantation systems |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201805567VA true SG11201805567VA (en) | 2018-07-30 |
Family
ID=57906976
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202007780YA SG10202007780YA (en) | 2015-12-31 | 2016-12-22 | Tin-containing dopant compositions, systems and methods for use in ion implantation systems |
SG11201805567VA SG11201805567VA (en) | 2015-12-31 | 2016-12-22 | Tin-containing dopant compositions, systems and methods for use in ion implantation systems |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202007780YA SG10202007780YA (en) | 2015-12-31 | 2016-12-22 | Tin-containing dopant compositions, systems and methods for use in ion implantation systems |
Country Status (8)
Country | Link |
---|---|
US (2) | US10221201B2 (en) |
EP (1) | EP3398200B1 (en) |
JP (1) | JP6711917B2 (en) |
KR (1) | KR102228208B1 (en) |
CN (1) | CN108604524B (en) |
SG (2) | SG10202007780YA (en) |
TW (1) | TWI751130B (en) |
WO (1) | WO2017116945A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
US11098402B2 (en) * | 2017-08-22 | 2021-08-24 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
WO2021232036A1 (en) * | 2020-05-11 | 2021-11-18 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
CN111721599B (en) * | 2020-06-23 | 2021-08-27 | 南京大学 | Atomic-level material beam variable-temperature liquid coating collection method and device in vacuum |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3472694A (en) * | 1961-05-26 | 1969-10-14 | Rca Corp | Deposition of crystalline niobium stannide |
US3677814A (en) | 1970-10-26 | 1972-07-18 | Ppg Industries Inc | Process for forming electroconductive tin oxide films by pyrolyzation of alkyl and aryl tin fluorides |
BR7806939A (en) | 1978-10-20 | 1980-04-22 | Gordon Roy Gerald | PROCESS FOR THE DEPOSITION OF TRANSPARENT STANIC OXIDE FILMS ON A HEATED SUBSTRATE, ARTICLE AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION |
JPS6056066A (en) | 1983-09-05 | 1985-04-01 | Nissin Electric Co Ltd | Thin film forming device |
JP3025122B2 (en) * | 1992-12-28 | 2000-03-27 | キヤノン株式会社 | Photovoltaic element and power generation system |
BE1008284A6 (en) * | 1994-05-06 | 1996-03-05 | Printing International Naamloz | PRINTING DEVICE. |
DE19530434C2 (en) | 1995-08-18 | 2003-02-20 | Goldschmidt Ag Th | Process for the preparation of alkyltin oxyfluorides |
GB9522476D0 (en) | 1995-11-02 | 1996-01-03 | Boc Group Plc | Method and vessel for the storage of gas |
US6006796A (en) | 1997-09-12 | 1999-12-28 | Ashland Inc. | Asphalt loading safety system |
US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
US6959724B2 (en) | 2002-07-01 | 2005-11-01 | Praxair Technology, Inc. | Multiple regulator vacuum delivery valve assembly |
DE102004052580B4 (en) * | 2004-10-29 | 2008-09-25 | Advanced Micro Devices, Inc., Sunnyvale | Apparatus and method for supplying precursor gases to an implantation facility |
EP2026889A4 (en) * | 2006-06-12 | 2011-09-07 | Semequip Inc | Vapor delivery to devices under vacuum |
US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
US7708028B2 (en) * | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
US9093372B2 (en) * | 2012-03-30 | 2015-07-28 | Varian Semiconductor Equipment Associates, Inc. | Technique for processing a substrate |
JP2014044829A (en) | 2012-08-24 | 2014-03-13 | Univ Of Tokyo | Manufacturing apparatus and manufacturing method of microstructure |
US9897257B2 (en) * | 2012-09-21 | 2018-02-20 | Entegris, Inc. | Anti-spike pressure management of pressure-regulated fluid storage and delivery vessels |
US9165773B2 (en) * | 2013-05-28 | 2015-10-20 | Praxair Technology, Inc. | Aluminum dopant compositions, delivery package and method of use |
US20150024899A1 (en) | 2013-07-18 | 2015-01-22 | Dana Limited | Variable-radius contact geometry for traction drives |
MY182759A (en) | 2013-08-05 | 2021-02-05 | Numat Tech Inc | Metal organic frameworks for electronic gas storage |
US9852887B2 (en) | 2013-08-23 | 2017-12-26 | Advanced Ion Beam Technology, Inc. | Ion source of an ion implanter |
US9427722B2 (en) | 2013-10-16 | 2016-08-30 | Numat Technologies, Inc. | Metal-organic frameworks for oxygen storage and air separation |
US9570271B2 (en) | 2014-03-03 | 2017-02-14 | Praxair Technology, Inc. | Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation |
WO2015146749A1 (en) | 2014-03-26 | 2015-10-01 | 東レ株式会社 | Method for manufacturing semiconductor device and semiconductor device |
WO2015191929A1 (en) * | 2014-06-13 | 2015-12-17 | Entegris, Inc. | Adsorbent-based pressure stabilzation of pressure-regulated fluid storage and dispensing vessels |
US9925516B2 (en) | 2014-12-02 | 2018-03-27 | Numat Technologies, Inc. | Formation of high surface area metal-organic frameworks |
EP3227017B1 (en) | 2014-12-04 | 2021-02-03 | Numat Technologies Inc. | Method of abating or removing an electronic gas from an electronic gas containing effluent |
US10221201B2 (en) * | 2015-12-31 | 2019-03-05 | Praxair Technology, Inc. | Tin-containing dopant compositions, systems and methods for use in ION implantation systems |
-
2016
- 2016-12-21 US US15/386,308 patent/US10221201B2/en active Active
- 2016-12-22 SG SG10202007780YA patent/SG10202007780YA/en unknown
- 2016-12-22 EP EP16831601.6A patent/EP3398200B1/en active Active
- 2016-12-22 SG SG11201805567VA patent/SG11201805567VA/en unknown
- 2016-12-22 KR KR1020187020606A patent/KR102228208B1/en active IP Right Grant
- 2016-12-22 WO PCT/US2016/068206 patent/WO2017116945A1/en active Application Filing
- 2016-12-22 JP JP2018534672A patent/JP6711917B2/en active Active
- 2016-12-22 CN CN201680081428.0A patent/CN108604524B/en active Active
- 2016-12-27 TW TW105143385A patent/TWI751130B/en active
-
2019
- 2019-01-16 US US16/248,952 patent/US10633402B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190144471A1 (en) | 2019-05-16 |
KR20180134839A (en) | 2018-12-19 |
US10221201B2 (en) | 2019-03-05 |
CN108604524B (en) | 2021-05-25 |
US20170190723A1 (en) | 2017-07-06 |
JP2019507938A (en) | 2019-03-22 |
CN108604524A (en) | 2018-09-28 |
JP6711917B2 (en) | 2020-06-17 |
US10633402B2 (en) | 2020-04-28 |
EP3398200B1 (en) | 2021-04-21 |
SG10202007780YA (en) | 2020-09-29 |
EP3398200A1 (en) | 2018-11-07 |
TWI751130B (en) | 2022-01-01 |
KR102228208B1 (en) | 2021-03-17 |
TW201805294A (en) | 2018-02-16 |
WO2017116945A1 (en) | 2017-07-06 |
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