SG11201805551RA - Method for determining and regulating a diameter of a single crystal during pulling of the single crystal - Google Patents

Method for determining and regulating a diameter of a single crystal during pulling of the single crystal

Info

Publication number
SG11201805551RA
SG11201805551RA SG11201805551RA SG11201805551RA SG11201805551RA SG 11201805551R A SG11201805551R A SG 11201805551RA SG 11201805551R A SG11201805551R A SG 11201805551RA SG 11201805551R A SG11201805551R A SG 11201805551RA SG 11201805551R A SG11201805551R A SG 11201805551RA
Authority
SG
Singapore
Prior art keywords
single crystal
diameter
determining
regulating
during pulling
Prior art date
Application number
SG11201805551RA
Other languages
English (en)
Inventor
Thomas Schröck
Thomas Aubrunner
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201805551RA publication Critical patent/SG11201805551RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG11201805551RA 2016-02-05 2017-01-24 Method for determining and regulating a diameter of a single crystal during pulling of the single crystal SG11201805551RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016201778.0A DE102016201778A1 (de) 2016-02-05 2016-02-05 Verfahren zum Ermitteln und Regeln eines Durchmessers eines Einkristalls beim Ziehen des Einkristalls
PCT/EP2017/051446 WO2017133930A1 (de) 2016-02-05 2017-01-24 Verfahren zum ermitteln und regeln eines durchmessers eines einkristalls beim ziehen des einkristalls

Publications (1)

Publication Number Publication Date
SG11201805551RA true SG11201805551RA (en) 2018-07-30

Family

ID=57909616

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201805551RA SG11201805551RA (en) 2016-02-05 2017-01-24 Method for determining and regulating a diameter of a single crystal during pulling of the single crystal

Country Status (9)

Country Link
US (1) US10738392B2 (zh)
EP (1) EP3411515B1 (zh)
JP (1) JP6889170B2 (zh)
KR (1) KR102111873B1 (zh)
CN (1) CN108699723B (zh)
DE (1) DE102016201778A1 (zh)
SG (1) SG11201805551RA (zh)
TW (1) TWI650449B (zh)
WO (1) WO2017133930A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7456182B2 (ja) * 2020-02-19 2024-03-27 住友金属鉱山株式会社 単結晶の製造方法
US11618971B2 (en) * 2020-09-29 2023-04-04 Sumco Corporation Method and apparatus for manufacturing defect-free monocrystalline silicon crystal
KR102662342B1 (ko) * 2021-09-28 2024-04-30 (주)에스테크 잉곳 성장 제어 장치 및 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1983002464A1 (en) 1982-01-04 1983-07-21 Seymour, Robert, Stephen Diameter control in czochralski crystal growth
FR2553793B1 (fr) * 1983-10-19 1986-02-14 Crismatec Procede de commande d'une machine de tirage de monocristaux
JPS6321280A (ja) 1986-07-10 1988-01-28 Osaka Titanium Seizo Kk 単結晶テール部の直径制御方法
US5269875A (en) * 1989-10-05 1993-12-14 Shin-Etsu Handotai Company, Limited Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
JPH0663824B2 (ja) * 1990-04-29 1994-08-22 信越半導体株式会社 湯面振動測定方法及び装置
JPH0785489B2 (ja) 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
DE4231162C2 (de) 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
US5653799A (en) * 1995-06-02 1997-08-05 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
DE19529485A1 (de) 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Bestimmung des Durchmessers eines wachsenden Einkristalls
JPH09221378A (ja) 1996-02-13 1997-08-26 Sharp Corp 結晶製造装置
JP2990661B2 (ja) * 1996-09-17 1999-12-13 住友金属工業株式会社 単結晶成長方法
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US6106612A (en) 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
JP3528758B2 (ja) * 2000-05-31 2004-05-24 三菱住友シリコン株式会社 単結晶引き上げ装置
JP4785762B2 (ja) 2007-01-30 2011-10-05 コバレントマテリアル株式会社 単結晶の製造方法
TWI411709B (zh) 2009-03-27 2013-10-11 Sumco Corp 單晶直徑的控制方法
CN104064158B (zh) * 2014-07-17 2016-05-04 深圳市华星光电技术有限公司 具有自我补偿功能的栅极驱动电路

Also Published As

Publication number Publication date
EP3411515B1 (de) 2021-01-13
KR20180099853A (ko) 2018-09-05
JP6889170B2 (ja) 2021-06-18
KR102111873B1 (ko) 2020-05-18
TW201805491A (zh) 2018-02-16
US20180363163A1 (en) 2018-12-20
CN108699723B (zh) 2021-03-16
TWI650449B (zh) 2019-02-11
WO2017133930A1 (de) 2017-08-10
US10738392B2 (en) 2020-08-11
CN108699723A (zh) 2018-10-23
JP2019503972A (ja) 2019-02-14
DE102016201778A1 (de) 2017-08-10
EP3411515A1 (de) 2018-12-12

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