SG11201803362VA - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG11201803362VA
SG11201803362VA SG11201803362VA SG11201803362VA SG11201803362VA SG 11201803362V A SG11201803362V A SG 11201803362VA SG 11201803362V A SG11201803362V A SG 11201803362VA SG 11201803362V A SG11201803362V A SG 11201803362VA SG 11201803362V A SG11201803362V A SG 11201803362VA
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG11201803362VA
Other languages
English (en)
Inventor
Noriaki Sugita
Shuhei Matsuda
Takayuki Matsushita
Mika Chinen
Original Assignee
Nitta Haas Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc filed Critical Nitta Haas Inc
Publication of SG11201803362VA publication Critical patent/SG11201803362VA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201803362VA 2015-10-23 2016-10-21 Polishing composition SG11201803362VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015209326 2015-10-23
PCT/JP2016/081307 WO2017069253A1 (ja) 2015-10-23 2016-10-21 研磨用組成物

Publications (1)

Publication Number Publication Date
SG11201803362VA true SG11201803362VA (en) 2018-05-30

Family

ID=58557535

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803362VA SG11201803362VA (en) 2015-10-23 2016-10-21 Polishing composition

Country Status (8)

Country Link
US (1) US10696869B2 (de)
EP (1) EP3366747B1 (de)
JP (1) JP6856535B2 (de)
KR (1) KR102657004B1 (de)
CN (1) CN108138032B (de)
SG (1) SG11201803362VA (de)
TW (1) TWI713611B (de)
WO (1) WO2017069253A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180070586A (ko) * 2015-10-23 2018-06-26 니타 하스 인코포레이티드 연마용 조성물
JP6978933B2 (ja) * 2017-12-27 2021-12-08 ニッタ・デュポン株式会社 研磨用組成物
JP7361467B2 (ja) * 2018-12-25 2023-10-16 ニッタ・デュポン株式会社 研磨用組成物
JP7158280B2 (ja) * 2018-12-28 2022-10-21 ニッタ・デュポン株式会社 半導体研磨用組成物
US11702570B2 (en) * 2019-03-27 2023-07-18 Fujimi Incorporated Polishing composition
JP2021105145A (ja) * 2019-12-27 2021-07-26 ニッタ・デュポン株式会社 研磨用組成物及びシリコンウェーハの研磨方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4212861B2 (ja) * 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
US8822339B2 (en) * 2009-10-13 2014-09-02 Lg Chem, Ltd. Slurry composition for CMP, and polishing method
JP5721505B2 (ja) * 2011-04-01 2015-05-20 ニッタ・ハース株式会社 研磨用組成物
SG11201401309PA (en) * 2011-10-24 2014-06-27 Fujimi Inc Composition for polishing purposes, polishing method using same, and method for producing substrate
JP5732601B2 (ja) * 2012-11-30 2015-06-10 ニッタ・ハース株式会社 研磨組成物
JP6087143B2 (ja) * 2012-12-28 2017-03-01 花王株式会社 シリコンウェーハ用研磨液組成物
CN105051145B (zh) * 2013-03-19 2018-06-26 福吉米株式会社 研磨用组合物、研磨用组合物制造方法及研磨用组合物制备用试剂盒
JP2014216464A (ja) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity

Also Published As

Publication number Publication date
US20180312725A1 (en) 2018-11-01
EP3366747A1 (de) 2018-08-29
KR102657004B1 (ko) 2024-04-15
EP3366747B1 (de) 2022-10-05
US10696869B2 (en) 2020-06-30
WO2017069253A1 (ja) 2017-04-27
KR20180072693A (ko) 2018-06-29
JP6856535B2 (ja) 2021-04-07
EP3366747A4 (de) 2018-10-10
JPWO2017069253A1 (ja) 2018-08-09
CN108138032B (zh) 2021-02-12
TWI713611B (zh) 2020-12-21
CN108138032A (zh) 2018-06-08
TW201728735A (zh) 2017-08-16

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