SG11201803362VA - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG11201803362VA SG11201803362VA SG11201803362VA SG11201803362VA SG11201803362VA SG 11201803362V A SG11201803362V A SG 11201803362VA SG 11201803362V A SG11201803362V A SG 11201803362VA SG 11201803362V A SG11201803362V A SG 11201803362VA SG 11201803362V A SG11201803362V A SG 11201803362VA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015209326 | 2015-10-23 | ||
PCT/JP2016/081307 WO2017069253A1 (ja) | 2015-10-23 | 2016-10-21 | 研磨用組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201803362VA true SG11201803362VA (en) | 2018-05-30 |
Family
ID=58557535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201803362VA SG11201803362VA (en) | 2015-10-23 | 2016-10-21 | Polishing composition |
Country Status (8)
Country | Link |
---|---|
US (1) | US10696869B2 (de) |
EP (1) | EP3366747B1 (de) |
JP (1) | JP6856535B2 (de) |
KR (1) | KR102657004B1 (de) |
CN (1) | CN108138032B (de) |
SG (1) | SG11201803362VA (de) |
TW (1) | TWI713611B (de) |
WO (1) | WO2017069253A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180070586A (ko) * | 2015-10-23 | 2018-06-26 | 니타 하스 인코포레이티드 | 연마용 조성물 |
JP6978933B2 (ja) * | 2017-12-27 | 2021-12-08 | ニッタ・デュポン株式会社 | 研磨用組成物 |
JP7361467B2 (ja) * | 2018-12-25 | 2023-10-16 | ニッタ・デュポン株式会社 | 研磨用組成物 |
JP7158280B2 (ja) * | 2018-12-28 | 2022-10-21 | ニッタ・デュポン株式会社 | 半導体研磨用組成物 |
US11702570B2 (en) * | 2019-03-27 | 2023-07-18 | Fujimi Incorporated | Polishing composition |
JP2021105145A (ja) * | 2019-12-27 | 2021-07-26 | ニッタ・デュポン株式会社 | 研磨用組成物及びシリコンウェーハの研磨方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4212861B2 (ja) * | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法 |
US8822339B2 (en) * | 2009-10-13 | 2014-09-02 | Lg Chem, Ltd. | Slurry composition for CMP, and polishing method |
JP5721505B2 (ja) * | 2011-04-01 | 2015-05-20 | ニッタ・ハース株式会社 | 研磨用組成物 |
SG11201401309PA (en) * | 2011-10-24 | 2014-06-27 | Fujimi Inc | Composition for polishing purposes, polishing method using same, and method for producing substrate |
JP5732601B2 (ja) * | 2012-11-30 | 2015-06-10 | ニッタ・ハース株式会社 | 研磨組成物 |
JP6087143B2 (ja) * | 2012-12-28 | 2017-03-01 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
CN105051145B (zh) * | 2013-03-19 | 2018-06-26 | 福吉米株式会社 | 研磨用组合物、研磨用组合物制造方法及研磨用组合物制备用试剂盒 |
JP2014216464A (ja) * | 2013-04-25 | 2014-11-17 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物および基板研磨方法 |
US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
-
2016
- 2016-10-21 SG SG11201803362VA patent/SG11201803362VA/en unknown
- 2016-10-21 EP EP16857566.0A patent/EP3366747B1/de active Active
- 2016-10-21 JP JP2017545815A patent/JP6856535B2/ja active Active
- 2016-10-21 CN CN201680061350.6A patent/CN108138032B/zh active Active
- 2016-10-21 US US15/769,934 patent/US10696869B2/en active Active
- 2016-10-21 KR KR1020187011068A patent/KR102657004B1/ko active IP Right Grant
- 2016-10-21 TW TW105134181A patent/TWI713611B/zh active
- 2016-10-21 WO PCT/JP2016/081307 patent/WO2017069253A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20180312725A1 (en) | 2018-11-01 |
EP3366747A1 (de) | 2018-08-29 |
KR102657004B1 (ko) | 2024-04-15 |
EP3366747B1 (de) | 2022-10-05 |
US10696869B2 (en) | 2020-06-30 |
WO2017069253A1 (ja) | 2017-04-27 |
KR20180072693A (ko) | 2018-06-29 |
JP6856535B2 (ja) | 2021-04-07 |
EP3366747A4 (de) | 2018-10-10 |
JPWO2017069253A1 (ja) | 2018-08-09 |
CN108138032B (zh) | 2021-02-12 |
TWI713611B (zh) | 2020-12-21 |
CN108138032A (zh) | 2018-06-08 |
TW201728735A (zh) | 2017-08-16 |
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