SG11201801849YA - Substrate for surface acoustic wave element and production process for the same - Google Patents

Substrate for surface acoustic wave element and production process for the same

Info

Publication number
SG11201801849YA
SG11201801849YA SG11201801849YA SG11201801849YA SG11201801849YA SG 11201801849Y A SG11201801849Y A SG 11201801849YA SG 11201801849Y A SG11201801849Y A SG 11201801849YA SG 11201801849Y A SG11201801849Y A SG 11201801849YA SG 11201801849Y A SG11201801849Y A SG 11201801849YA
Authority
SG
Singapore
Prior art keywords
substrate
same
production process
acoustic wave
surface acoustic
Prior art date
Application number
SG11201801849YA
Other languages
English (en)
Inventor
Ietaka Sahashi
Takeji Sasamata
Hideki Ohashi
Masato Kurachi
Toru Yagi
Hiroyuki Azuma
Naofumi Kajitani
Original Assignee
Yamaju Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaju Ceramics Co Ltd filed Critical Yamaju Ceramics Co Ltd
Publication of SG11201801849YA publication Critical patent/SG11201801849YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
SG11201801849YA 2016-07-11 2017-06-27 Substrate for surface acoustic wave element and production process for the same SG11201801849YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016136486A JP6169759B1 (ja) 2016-07-11 2016-07-11 弾性表面波素子用基板及びその製造方法
PCT/JP2017/023574 WO2018012279A1 (ja) 2016-07-11 2017-06-27 弾性表面波素子用基板及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201801849YA true SG11201801849YA (en) 2018-04-27

Family

ID=59384420

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201801849YA SG11201801849YA (en) 2016-07-11 2017-06-27 Substrate for surface acoustic wave element and production process for the same

Country Status (7)

Country Link
US (1) US20200232118A1 (de)
JP (1) JP6169759B1 (de)
KR (1) KR102069456B1 (de)
CN (1) CN107925399B (de)
DE (1) DE112017003479T5 (de)
SG (1) SG11201801849YA (de)
WO (1) WO2018012279A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2665688C2 (ru) * 2013-04-12 2018-09-04 Общество С Ограниченной Ответственностью "Фарминтерпрайсез" Производные бисамидов дикарбоновых кислот, их применение, фармацевтическая композиция на их основе, способы их получения

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2720525B2 (ja) * 1989-06-27 1998-03-04 旭硝子株式会社 マグネシウム添加ニオブ酸リチウム単結晶の製造方法
CN1048569A (zh) * 1989-07-03 1991-01-16 中国科学院上海硅酸盐研究所 均质掺镁铌酸锂单晶及其制备方法
JPH04325496A (ja) * 1991-04-25 1992-11-13 Kyocera Corp マグネシウム添加ニオブ酸リチウム単結晶の製法
JPH04325497A (ja) * 1991-04-25 1992-11-13 Kyocera Corp マグネシウム添加ニオブ酸リチウム単結晶の製法
JP3261594B2 (ja) * 1992-04-24 2002-03-04 日立金属株式会社 タンタル酸リチウム単結晶、単結晶基板および光素子
JP2919325B2 (ja) * 1995-11-29 1999-07-12 日本電気株式会社 音響光学フィルタ
JP2001042147A (ja) * 1999-07-30 2001-02-16 Kyocera Corp 光学素子用基体及びそれを用いた光導波路体
JP4067845B2 (ja) * 2002-03-12 2008-03-26 株式会社山寿セラミックス マグネシウムニオブ酸リチウム単結晶およびその製造方法
US7309392B2 (en) * 2003-11-25 2007-12-18 Sumitomo Metal Mining Co., Ltd. Lithium niobate substrate and method of producing the same
EP1939333A4 (de) * 2005-10-19 2009-11-11 Yamaju Ceramics Co Ltd Ferroelektrischer einkristall, oberflächenwellenfilter damit und verfahren zur herstellung des filters
CN101308311B (zh) * 2008-06-25 2010-11-17 北京交通大学 差频混频级联掺镁近化学比铌酸锂全光波长转换器
CN101956236A (zh) * 2010-10-21 2011-01-26 哈尔滨工程大学 大尺寸掺杂铌酸锂晶体及其制备方法
CN102899722B (zh) * 2012-09-12 2015-09-09 江西匀晶光电技术有限公司 一种掺氧化镁同成分铌酸锂晶片及其制备方法
CN103922405B (zh) * 2014-04-18 2015-08-12 山东大学 一种均匀掺镁铌酸锂多晶料的批量化合成方法
CN105696078B (zh) * 2016-04-12 2018-09-28 盐城市振弘电子材料厂 一种钽酸锂单晶的制备方法

Also Published As

Publication number Publication date
CN107925399B (zh) 2022-02-15
KR102069456B1 (ko) 2020-01-22
CN107925399A (zh) 2018-04-17
KR20180034512A (ko) 2018-04-04
JP6169759B1 (ja) 2017-07-26
WO2018012279A1 (ja) 2018-01-18
DE112017003479T5 (de) 2019-04-04
JP2018011095A (ja) 2018-01-18
US20200232118A1 (en) 2020-07-23

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