SG11201708157RA - Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method - Google Patents

Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method

Info

Publication number
SG11201708157RA
SG11201708157RA SG11201708157RA SG11201708157RA SG11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA SG 11201708157R A SG11201708157R A SG 11201708157RA
Authority
SG
Singapore
Prior art keywords
lithography
underlayer film
forming
composition
forming method
Prior art date
Application number
SG11201708157RA
Other languages
English (en)
Inventor
Kana Okada
Takashi Makinoshima
Masatoshi Echigo
Go Higashihara
Atsushi Okoshi
Original Assignee
Mitsubishi Gas Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co filed Critical Mitsubishi Gas Chemical Co
Publication of SG11201708157RA publication Critical patent/SG11201708157RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/28—Chemically modified polycondensates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G10/00—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
    • C08G10/02—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
    • C08G10/04—Chemically-modified polycondensates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C08G73/0644—Poly(1,3,5)triazines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C08G73/065—Preparatory processes
    • C08G73/0655—Preparatory processes from polycyanurates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
SG11201708157RA 2015-04-07 2016-04-07 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method SG11201708157RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015078565 2015-04-07
PCT/JP2016/061398 WO2016163457A1 (ja) 2015-04-07 2016-04-07 リソグラフィー用下層膜形成用材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法

Publications (1)

Publication Number Publication Date
SG11201708157RA true SG11201708157RA (en) 2017-11-29

Family

ID=57073292

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201708157RA SG11201708157RA (en) 2015-04-07 2016-04-07 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method

Country Status (8)

Country Link
US (1) US20180101097A1 (de)
EP (1) EP3282319A4 (de)
JP (1) JP6052652B1 (de)
KR (1) KR20170134511A (de)
CN (1) CN107533297A (de)
SG (1) SG11201708157RA (de)
TW (1) TW201704278A (de)
WO (1) WO2016163457A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016021511A1 (ja) * 2014-08-08 2016-02-11 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
US10343296B2 (en) 2015-07-25 2019-07-09 Bettcher Industries, Inc. Power operated rotary knife with notched rotary knife blade and trim guide
JP7235207B2 (ja) * 2017-11-20 2023-03-08 三菱瓦斯化学株式会社 リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52154857A (en) * 1976-06-18 1977-12-22 Mitsubishi Gas Chem Co Inc Composition containing cyanic ester resin
JP4407823B2 (ja) * 2004-02-18 2010-02-03 三菱瓦斯化学株式会社 新規なシアネートエステル化合物、難燃性樹脂組成物、およびその硬化物
KR101397354B1 (ko) * 2007-12-07 2014-05-19 미츠비시 가스 가가쿠 가부시키가이샤 리소그라피용 하층막 형성 조성물 및 다층 레지스트 패턴 형성 방법
JP5950127B2 (ja) * 2011-08-09 2016-07-13 三菱瓦斯化学株式会社 新規なシアン酸エステル化合物及びその製造方法、並びに該化合物を含む硬化性樹脂組成物及びその硬化物
KR101821705B1 (ko) * 2011-09-06 2018-01-25 주식회사 동진쎄미켐 페놀계 자가가교 고분자 및 이를 포함하는 레지스트 하층막 조성물
KR101969191B1 (ko) * 2011-12-07 2019-04-15 미츠비시 가스 가가쿠 가부시키가이샤 수지 조성물, 프리프레그 및 적층판
KR101920106B1 (ko) * 2012-01-31 2018-11-19 미츠비시 가스 가가쿠 가부시키가이샤 프린트 배선판 재료용 수지 조성물, 그리고 그것을 사용한 프리프레그, 수지 시트, 금속박 피복 적층판 및 프린트 배선판
TWI585537B (zh) * 2012-02-09 2017-06-01 日產化學工業股份有限公司 膜形成組成物及離子注入方法
WO2016021511A1 (ja) * 2014-08-08 2016-02-11 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
JP6403003B2 (ja) * 2014-12-05 2018-10-10 Dic株式会社 シアン酸エステル化合物、シアン酸エステル樹脂、硬化性組成物、その硬化物、ビルドアップフィルム、半導体封止材料、プリプレグ、回路基板、及びシアン酸エステル樹脂の製造方法
US20180052392A1 (en) * 2015-03-03 2018-02-22 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, and circuit pattern forming method

Also Published As

Publication number Publication date
TW201704278A (zh) 2017-02-01
WO2016163457A1 (ja) 2016-10-13
JPWO2016163457A1 (ja) 2017-04-27
CN107533297A (zh) 2018-01-02
US20180101097A1 (en) 2018-04-12
EP3282319A1 (de) 2018-02-14
KR20170134511A (ko) 2017-12-06
EP3282319A4 (de) 2018-12-05
JP6052652B1 (ja) 2016-12-27

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