SG11201708137VA - Method and system for determining in-plane distortions in a substrate - Google Patents
Method and system for determining in-plane distortions in a substrateInfo
- Publication number
- SG11201708137VA SG11201708137VA SG11201708137VA SG11201708137VA SG11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA SG 11201708137V A SG11201708137V A SG 11201708137VA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- determining
- plane distortions
- distortions
- plane
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
- G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
- G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02027—Two or more interferometric channels or interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562143708P | 2015-04-06 | 2015-04-06 | |
US15/091,021 US10024654B2 (en) | 2015-04-06 | 2016-04-05 | Method and system for determining in-plane distortions in a substrate |
PCT/US2016/026148 WO2016164415A1 (en) | 2015-04-06 | 2016-04-06 | Method and system for determining in-plane distortions in a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201708137VA true SG11201708137VA (en) | 2017-11-29 |
Family
ID=57017441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201708137VA SG11201708137VA (en) | 2015-04-06 | 2016-04-06 | Method and system for determining in-plane distortions in a substrate |
Country Status (7)
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US10236222B2 (en) * | 2017-02-08 | 2019-03-19 | Kla-Tencor Corporation | System and method for measuring substrate and film thickness distribution |
EP3364247A1 (en) | 2017-02-17 | 2018-08-22 | ASML Netherlands B.V. | Methods & apparatus for monitoring a lithographic manufacturing process |
EP3457213A1 (en) * | 2017-09-18 | 2019-03-20 | ASML Netherlands B.V. | Methods and apparatus for use in a device manufacturing method |
CN112585540B (zh) * | 2018-08-22 | 2024-09-17 | Asml荷兰有限公司 | 量测设备 |
KR102760929B1 (ko) | 2019-01-21 | 2025-02-03 | 삼성전자주식회사 | 반도체 소자 제조 방법 |
TWI731760B (zh) * | 2020-07-28 | 2021-06-21 | 亞亞科技股份有限公司 | 電路板翹曲檢測裝置 |
US11829077B2 (en) * | 2020-12-11 | 2023-11-28 | Kla Corporation | System and method for determining post bonding overlay |
CN113203357B (zh) * | 2021-04-09 | 2022-08-09 | 中国科学院上海光学精密机械研究所 | 一种双侧斐索干涉仪检测装置 |
US12165930B2 (en) * | 2021-06-03 | 2024-12-10 | Kla Corporation | Adaptive modeling misregistration measurement system and method |
US11782411B2 (en) * | 2021-07-28 | 2023-10-10 | Kla Corporation | System and method for mitigating overlay distortion patterns caused by a wafer bonding tool |
US12385850B2 (en) | 2021-08-16 | 2025-08-12 | Globalwafers Co., Ltd. | Semiconductor wafers using front-end processed wafer global geometry metrics |
US11940266B2 (en) * | 2021-09-21 | 2024-03-26 | The Aerospace Corporation | Process for rapidly measuring coefficient of moisture expansion (CME) values for materials |
KR20240156433A (ko) * | 2022-05-13 | 2024-10-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 곡률을 사용하여 면외 왜곡을 보상하기 위한 선량 맵핑 |
US20250028294A1 (en) * | 2023-07-18 | 2025-01-23 | Applied Materials, Inc. | Measurement of inherent substrate distortion |
CN117238812B (zh) * | 2023-11-10 | 2024-04-05 | 四川省农业机械科学研究院 | 基板翘曲测量装置及测量方法 |
Family Cites Families (33)
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US5444538A (en) * | 1994-03-10 | 1995-08-22 | New Vision Systems, Inc. | System and method for optimizing the grid and intrafield registration of wafer patterns |
JPH09129635A (ja) * | 1995-10-30 | 1997-05-16 | Mitsubishi Electric Corp | 半導体形状予測シミュレーション方法及びそのシステム |
AU2002346685A1 (en) * | 2001-05-25 | 2002-12-16 | California Institute Of Technology | Determining large deformations and stresses of layered and graded structures to include effects of body forces |
JP3892750B2 (ja) * | 2002-04-12 | 2007-03-14 | 独立行政法人科学技術振興機構 | 三次元特徴領域抽出装置 |
JP4464033B2 (ja) | 2002-06-13 | 2010-05-19 | 信越半導体株式会社 | 半導体ウエーハの形状評価方法及び形状評価装置 |
US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
MY164487A (en) * | 2002-07-11 | 2017-12-29 | Molecular Imprints Inc | Step and repeat imprint lithography processes |
WO2004054784A1 (en) | 2002-12-13 | 2004-07-01 | Molecular Imprints, Inc. | Magnification corrections employing out-of-plane distortions on a substrate |
US6847458B2 (en) * | 2003-03-20 | 2005-01-25 | Phase Shift Technology, Inc. | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
JP2006004259A (ja) * | 2004-06-18 | 2006-01-05 | Nec Corp | 電子機器の設計支援システム及び多層プリント回路基板の設計支援システム |
US7418353B2 (en) | 2004-10-12 | 2008-08-26 | Wisconsin Alumni Research Foundation | Determining film stress from substrate shape using finite element procedures |
USD541979S1 (en) * | 2005-12-30 | 2007-05-01 | Crown Packaging Technology, Inc. | Spatula surface cosmetic applicator |
US7712068B2 (en) | 2006-02-17 | 2010-05-04 | Zhuoxiang Ren | Computation of electrical properties of an IC layout |
US8175831B2 (en) * | 2007-04-23 | 2012-05-08 | Kla-Tencor Corp. | Methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers |
WO2008151083A1 (en) | 2007-05-30 | 2008-12-11 | Kla-Tencor Corporation | Feedforward/feedback litho process control of stress and overlay |
JP2009003529A (ja) * | 2007-06-19 | 2009-01-08 | Sharp Corp | モデル生成装置、モデル生成方法およびモデル生成プログラム |
US7873585B2 (en) | 2007-08-31 | 2011-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for predicting a semiconductor parameter across an area of a wafer |
US8065109B2 (en) | 2008-08-28 | 2011-11-22 | Kla-Tencor Corporation | Localized substrate geometry characterization |
US8068234B2 (en) * | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
CN101629859B (zh) * | 2009-05-04 | 2011-04-20 | 付康 | 基于变形测量与数值反求确定薄膜应力的系统与方法 |
US8768665B2 (en) | 2010-01-08 | 2014-07-01 | Kla-Tencor Technologies Corporation | Site based quantification of substrate topography and its relation to lithography defocus and overlay |
WO2011101183A1 (en) * | 2010-02-19 | 2011-08-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and associated data processing apparatus and computer program product |
US8625083B2 (en) * | 2011-03-12 | 2014-01-07 | Ken Roberts | Thin film stress measurement 3D anisotropic volume |
US9354526B2 (en) * | 2011-10-11 | 2016-05-31 | Kla-Tencor Corporation | Overlay and semiconductor process control using a wafer geometry metric |
CN103245437B (zh) * | 2012-02-13 | 2017-02-08 | 付康 | 一种确定非线性薄膜应力的系统与方法 |
US9454084B2 (en) | 2012-05-29 | 2016-09-27 | Asml Netherlands B.V. | Method to determine the usefulness of alignment marks to correct overlay, and a combination of a lithographic apparatus and an overlay measurement system |
US9430593B2 (en) | 2012-10-11 | 2016-08-30 | Kla-Tencor Corporation | System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking |
US9036157B2 (en) * | 2012-10-19 | 2015-05-19 | National Applied Research Laboratories | System of computing surface reconstruction, in-plane and out-of-plane displacements and strain distribution |
US20140152797A1 (en) * | 2012-12-04 | 2014-06-05 | Samsung Electronics Co., Ltd. | Confocal optical inspection apparatus and confocal optical inspection method |
US10401279B2 (en) | 2013-10-29 | 2019-09-03 | Kla-Tencor Corporation | Process-induced distortion prediction and feedforward and feedback correction of overlay errors |
US9087176B1 (en) | 2014-03-06 | 2015-07-21 | Kla-Tencor Corporation | Statistical overlay error prediction for feed forward and feedback correction of overlay errors, root cause analysis and process control |
US9311443B2 (en) | 2014-06-17 | 2016-04-12 | Globalfoundries Inc. | Correcting for stress induced pattern shifts in semiconductor manufacturing |
US10509329B2 (en) | 2014-09-03 | 2019-12-17 | Kla-Tencor Corporation | Breakdown analysis of geometry induced overlay and utilization of breakdown analysis for improved overlay control |
-
2016
- 2016-04-05 US US15/091,021 patent/US10024654B2/en active Active
- 2016-04-06 JP JP2017552449A patent/JP6762317B2/ja active Active
- 2016-04-06 SG SG11201708137VA patent/SG11201708137VA/en unknown
- 2016-04-06 CN CN201680019869.8A patent/CN107431030B/zh active Active
- 2016-04-06 TW TW105110795A patent/TWI661175B/zh active
- 2016-04-06 WO PCT/US2016/026148 patent/WO2016164415A1/en active Application Filing
- 2016-04-06 KR KR1020177032141A patent/KR102353250B1/ko active Active
Also Published As
Publication number | Publication date |
---|---|
CN107431030A (zh) | 2017-12-01 |
KR20170136569A (ko) | 2017-12-11 |
CN107431030B (zh) | 2020-10-09 |
US20160290789A1 (en) | 2016-10-06 |
JP6762317B2 (ja) | 2020-09-30 |
TW201702552A (zh) | 2017-01-16 |
US10024654B2 (en) | 2018-07-17 |
KR102353250B1 (ko) | 2022-01-18 |
TWI661175B (zh) | 2019-06-01 |
JP2018512738A (ja) | 2018-05-17 |
WO2016164415A1 (en) | 2016-10-13 |
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