SG11201708016SA - Method for producing magnetic recording medium - Google Patents

Method for producing magnetic recording medium

Info

Publication number
SG11201708016SA
SG11201708016SA SG11201708016SA SG11201708016SA SG11201708016SA SG 11201708016S A SG11201708016S A SG 11201708016SA SG 11201708016S A SG11201708016S A SG 11201708016SA SG 11201708016S A SG11201708016S A SG 11201708016SA SG 11201708016S A SG11201708016S A SG 11201708016SA
Authority
SG
Singapore
Prior art keywords
recording medium
magnetic recording
producing magnetic
producing
medium
Prior art date
Application number
SG11201708016SA
Other languages
English (en)
Inventor
Tomohiro Moriya
Hitoshi Nakata
Takehito Shimatsu
Original Assignee
Fuji Electric Co Ltd
Univ Tohoku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Univ Tohoku filed Critical Fuji Electric Co Ltd
Publication of SG11201708016SA publication Critical patent/SG11201708016SA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
SG11201708016SA 2015-06-02 2016-06-02 Method for producing magnetic recording medium SG11201708016SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015112674 2015-06-02
PCT/JP2016/002685 WO2016194383A1 (ja) 2015-06-02 2016-06-02 磁気記録媒体の製造方法

Publications (1)

Publication Number Publication Date
SG11201708016SA true SG11201708016SA (en) 2017-12-28

Family

ID=57440983

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201708016SA SG11201708016SA (en) 2015-06-02 2016-06-02 Method for producing magnetic recording medium

Country Status (6)

Country Link
US (1) US10923150B2 (zh)
JP (1) JP6439869B2 (zh)
CN (1) CN107430872B (zh)
MY (1) MY179440A (zh)
SG (1) SG11201708016SA (zh)
WO (1) WO2016194383A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017122593A1 (ja) * 2016-01-12 2017-07-20 富士電機株式会社 磁気記録媒体およびこれを製造する方法
JP2017224371A (ja) * 2016-06-15 2017-12-21 昭和電工株式会社 磁気記録媒体及び磁気記憶装置
TWI640644B (zh) * 2017-01-19 2018-11-11 國立中興大學 Sputtering target for DC sputtering and perpendicular magnetic recording medium having the same
SG11201901734YA (en) * 2017-03-10 2019-04-29 Fuji Electric Co Ltd Magnetic recording medium
DE102019124616A1 (de) * 2019-09-12 2021-03-18 Cemecon Ag Mehrlagige Beschichtung
US11676632B2 (en) 2019-12-26 2023-06-13 Resonac Corporation Magnetic recording medium, method of manufacturing magnetic recording medium and magnetic storage device
JP7388226B2 (ja) * 2020-02-13 2023-11-29 株式会社レゾナック 磁気記録媒体およびその製造方法ならびに磁気記憶装置
CN115552052A (zh) * 2020-05-18 2022-12-30 田中贵金属工业株式会社 Pt-氧化物系溅射靶和垂直磁记录介质
US11508405B1 (en) 2021-06-21 2022-11-22 Western Digital Technologies, Inc. Magnetic recording media with plasma-polished pre-seed layer or substrate
US20230005503A1 (en) * 2021-07-01 2023-01-05 Western Digital Technologies, Inc. Heat-assisted magnetic recording (hamr) media with magnesium trapping layer
US11810605B2 (en) * 2021-09-29 2023-11-07 Western Digital Technologies, Inc. Magnetic recording media with tungsten pre-seed layer
US11900978B1 (en) 2022-08-11 2024-02-13 Western Digital Technologies, Inc. Magnetic recording medium with underlayer configured to reduce diffusion of titanium into a magnetic recording layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2529438B2 (ja) * 1990-05-11 1996-08-28 松下電器産業株式会社 酸化物薄膜の製造方法
DE4226911A1 (de) * 1992-08-14 1994-02-17 Basf Magnetics Gmbh Magnetischer Aufzeichnungsträger
US5800931A (en) * 1994-09-29 1998-09-01 Carnegie Mellon University Magnetic recording medium with a MgO sputter deposited seed layer
JPH09265620A (ja) * 1996-03-27 1997-10-07 Hitachi Metals Ltd 磁気記録媒体とその製造方法
JP4074181B2 (ja) 2002-11-28 2008-04-09 株式会社東芝 垂直磁気記録媒体
US7405011B2 (en) * 2004-06-30 2008-07-29 Hitachi Global Storage Technologies Netherlands B.V. Magnetic recording media for tilted recording
JP4385156B2 (ja) * 2006-07-27 2009-12-16 独立行政法人産業技術総合研究所 Ｃｃｐ−ｃｐｐ型巨大磁気抵抗素子
JP5617112B2 (ja) 2010-01-14 2014-11-05 独立行政法人物質・材料研究機構 垂直磁気記録媒体及びその製造方法
JP5561766B2 (ja) 2010-02-04 2014-07-30 昭和電工株式会社 熱アシスト磁気記録媒体及び磁気記憶装置
JP6014385B2 (ja) * 2012-05-14 2016-10-25 昭和電工株式会社 磁気記録媒体及び磁気記録再生装置
JP6182833B2 (ja) * 2012-07-26 2017-08-23 富士電機株式会社 垂直磁気記録媒体
JP2014081980A (ja) 2012-10-17 2014-05-08 Fuji Electric Co Ltd 磁気記録媒体の製造方法、及びこの方法により製造された磁気記録媒体
US9236564B2 (en) * 2013-12-11 2016-01-12 Samsung Electronics Co., Ltd. Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer

Also Published As

Publication number Publication date
US20180040346A1 (en) 2018-02-08
WO2016194383A1 (ja) 2016-12-08
US10923150B2 (en) 2021-02-16
CN107430872B (zh) 2019-07-30
CN107430872A (zh) 2017-12-01
MY179440A (en) 2020-11-06
JPWO2016194383A1 (ja) 2018-03-01
JP6439869B2 (ja) 2018-12-19

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