SG11201705419RA - Composite abrasive particles for chemical mechanical planarization composition and method of use thereof - Google Patents
Composite abrasive particles for chemical mechanical planarization composition and method of use thereofInfo
- Publication number
- SG11201705419RA SG11201705419RA SG11201705419RA SG11201705419RA SG11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA SG 11201705419R A SG11201705419R A SG 11201705419RA
- Authority
- SG
- Singapore
- Prior art keywords
- chemical mechanical
- abrasive particles
- mechanical planarization
- composite abrasive
- planarization composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562102319P | 2015-01-12 | 2015-01-12 | |
US201562221379P | 2015-09-21 | 2015-09-21 | |
PCT/US2016/012993 WO2016115096A1 (en) | 2015-01-12 | 2016-01-12 | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201705419RA true SG11201705419RA (en) | 2017-07-28 |
Family
ID=56367079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201705419RA SG11201705419RA (en) | 2015-01-12 | 2016-01-12 | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
Country Status (9)
Country | Link |
---|---|
US (3) | US10109493B2 (zh) |
EP (1) | EP3245262B1 (zh) |
JP (2) | JP6581198B2 (zh) |
KR (2) | KR20190091579A (zh) |
CN (2) | CN114621686A (zh) |
IL (1) | IL253158B (zh) |
SG (1) | SG11201705419RA (zh) |
TW (2) | TWI654288B (zh) |
WO (1) | WO2016115096A1 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201705419RA (en) * | 2015-01-12 | 2017-07-28 | Versum Mat Us Llc | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
US10570313B2 (en) * | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
JP6560155B2 (ja) * | 2016-04-20 | 2019-08-14 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法 |
US11059997B2 (en) * | 2017-01-16 | 2021-07-13 | Jgc Catalysts And Chemicals Ltd. | Polishing composition |
JP6694653B2 (ja) * | 2017-04-10 | 2020-05-20 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及びその製造方法並びに合成石英ガラス基板の研磨方法 |
US20190127607A1 (en) * | 2017-10-27 | 2019-05-02 | Versum Materials Us, Llc | Composite Particles, Method of Refining and Use Thereof |
CN113913156B (zh) * | 2017-10-31 | 2022-06-24 | Hoya株式会社 | 研磨液、玻璃基板的制造方法以及磁盘的制造方法 |
JP6936183B2 (ja) * | 2018-04-24 | 2021-09-15 | 信越化学工業株式会社 | 合成石英ガラス基板用の研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法 |
US11078417B2 (en) | 2018-06-29 | 2021-08-03 | Versum Materials Us, Llc | Low oxide trench dishing chemical mechanical polishing |
US11718767B2 (en) | 2018-08-09 | 2023-08-08 | Versum Materials Us, Llc | Chemical mechanical planarization composition for polishing oxide materials and method of use thereof |
US11180678B2 (en) * | 2018-10-31 | 2021-11-23 | Versum Materials Us, Llc | Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process |
US11608451B2 (en) * | 2019-01-30 | 2023-03-21 | Versum Materials Us, Llc | Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates |
JP2022553105A (ja) * | 2019-10-24 | 2022-12-21 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | 高い酸化物除去速度を有するシャロートレンチアイソレーション化学的機械平坦化組成物 |
CN114600101A (zh) | 2019-11-01 | 2022-06-07 | 日本电气株式会社 | 分析装置、控制方法和程序 |
IL293436A (en) * | 2019-12-04 | 2022-07-01 | Versum Mat Us Llc | Shallow Channel Isolation Mechanical Chemical Flattening for High Rate Oxide Coating Removal |
US11254839B2 (en) * | 2019-12-12 | 2022-02-22 | Versum Materials Us, Llc | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing |
JP2023506487A (ja) * | 2019-12-12 | 2023-02-16 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | 低酸化物トレンチディッシングシャロートレンチアイソレーション化学的機械平坦化研磨 |
JP7296504B2 (ja) * | 2021-04-02 | 2023-06-22 | エスケー エンパルス カンパニー リミテッド | 半導体工程用研磨組成物および研磨組成物を適用した半導体素子の製造方法 |
WO2023059999A1 (en) * | 2021-10-05 | 2023-04-13 | Versum Materials Us, Llc | Chemical mechanical planarization polishing for shallow trench isolation |
US20230399543A1 (en) * | 2022-06-10 | 2023-12-14 | Saint-Gobain Ceramics & Plastics, Inc. | Chemical mechanical planarization slurry and method of polishing a substrate |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
JPH03202269A (ja) * | 1989-10-12 | 1991-09-04 | Nalco Chem Co | 低ナトリウム低金属シリカ研磨スラリー |
EP0520109B1 (en) * | 1991-05-28 | 1995-03-29 | Rodel, Inc. | Low sodium, low metals silica polishing slurries |
DE60031857T2 (de) * | 1999-06-18 | 2007-09-13 | Hitachi Chemical Co., Ltd. | Verwendung eines cmp schleifmittels |
JP2001007060A (ja) * | 1999-06-18 | 2001-01-12 | Hitachi Chem Co Ltd | Cmp研磨剤及び基板の研磨方法 |
WO2001060940A1 (en) | 2000-02-16 | 2001-08-23 | Rodel Inc | Biocides for polishing slurries |
JP2005500173A (ja) * | 2001-08-20 | 2005-01-06 | サムソン コーニング カンパニー,リミテッド | シリカ−コーティングされたセリアを含む研磨スラリー |
DE10204471C1 (de) | 2002-02-05 | 2003-07-03 | Degussa | Wässerige Dispersion enthaltend mit Ceroxid umhülltes Siliciumdioxidpulver, Verfahren zu deren Herstellung und Verwendung |
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US6918820B2 (en) | 2003-04-11 | 2005-07-19 | Eastman Kodak Company | Polishing compositions comprising polymeric cores having inorganic surface particles and method of use |
JP4311247B2 (ja) * | 2004-03-19 | 2009-08-12 | 日立電線株式会社 | 研磨用砥粒、研磨剤、研磨液の製造方法 |
EP2438133B1 (en) * | 2009-06-05 | 2018-07-11 | Basf Se | Polishing slurry containing raspberry-type metal oxide nanostructures coated with CeO2 |
EP2500929B1 (en) * | 2009-11-11 | 2018-06-20 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and polishing method for substrate using same |
US20130171824A1 (en) * | 2010-09-08 | 2013-07-04 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
TWI593791B (zh) | 2011-01-25 | 2017-08-01 | 日立化成股份有限公司 | Cmp研磨液及其製造方法、複合粒子的製造方法以及基體的研磨方法 |
US8828874B2 (en) * | 2011-03-28 | 2014-09-09 | Sinmat, Inc. | Chemical mechanical polishing of group III-nitride surfaces |
JP5881394B2 (ja) * | 2011-12-06 | 2016-03-09 | 日揮触媒化成株式会社 | シリカ系複合粒子およびその製造方法 |
JP5787745B2 (ja) | 2011-12-26 | 2015-09-30 | 日揮触媒化成株式会社 | シリカ系複合粒子の製造方法 |
US9000557B2 (en) * | 2012-03-17 | 2015-04-07 | Zvi Or-Bach | Semiconductor device and structure |
JP2015169967A (ja) | 2014-03-04 | 2015-09-28 | 株式会社リコー | 情報処理システム、情報処理方法およびプログラム |
JP6283939B2 (ja) | 2014-03-25 | 2018-02-28 | 株式会社富士通ゼネラル | 天井埋込型空気調和機 |
JP6352060B2 (ja) | 2014-06-06 | 2018-07-04 | 花王株式会社 | 酸化珪素膜研磨用研磨液組成物 |
SG11201705419RA (en) * | 2015-01-12 | 2017-07-28 | Versum Mat Us Llc | Composite abrasive particles for chemical mechanical planarization composition and method of use thereof |
-
2016
- 2016-01-12 SG SG11201705419RA patent/SG11201705419RA/en unknown
- 2016-01-12 JP JP2017536539A patent/JP6581198B2/ja active Active
- 2016-01-12 TW TW105100853A patent/TWI654288B/zh active
- 2016-01-12 US US14/993,128 patent/US10109493B2/en active Active
- 2016-01-12 WO PCT/US2016/012993 patent/WO2016115096A1/en active Application Filing
- 2016-01-12 KR KR1020197022601A patent/KR20190091579A/ko not_active Application Discontinuation
- 2016-01-12 CN CN202210363963.2A patent/CN114621686A/zh active Pending
- 2016-01-12 KR KR1020177022424A patent/KR102240249B1/ko active IP Right Grant
- 2016-01-12 CN CN201680005509.2A patent/CN107109136A/zh active Pending
- 2016-01-12 TW TW107102774A patent/TW201817835A/zh unknown
- 2016-01-12 EP EP16737708.4A patent/EP3245262B1/en active Active
- 2016-07-12 US US15/208,334 patent/US10418247B2/en active Active
-
2017
- 2017-06-25 IL IL253158A patent/IL253158B/en active IP Right Grant
-
2018
- 2018-09-09 US US16/125,724 patent/US10669449B2/en active Active
-
2019
- 2019-07-16 JP JP2019131417A patent/JP7130608B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2016115096A1 (en) | 2016-07-21 |
EP3245262A4 (en) | 2018-07-04 |
EP3245262B1 (en) | 2021-07-21 |
JP7130608B2 (ja) | 2022-09-05 |
KR20190091579A (ko) | 2019-08-06 |
IL253158B (en) | 2021-04-29 |
US10669449B2 (en) | 2020-06-02 |
TW201817835A (zh) | 2018-05-16 |
US10418247B2 (en) | 2019-09-17 |
KR20170105556A (ko) | 2017-09-19 |
JP6581198B2 (ja) | 2019-09-25 |
JP2019199613A (ja) | 2019-11-21 |
CN107109136A (zh) | 2017-08-29 |
US20160200944A1 (en) | 2016-07-14 |
US20200115590A1 (en) | 2020-04-16 |
TWI654288B (zh) | 2019-03-21 |
EP3245262A1 (en) | 2017-11-22 |
TW201625767A (zh) | 2016-07-16 |
US20170133236A1 (en) | 2017-05-11 |
IL253158A0 (en) | 2017-08-31 |
CN114621686A (zh) | 2022-06-14 |
US10109493B2 (en) | 2018-10-23 |
JP2018506618A (ja) | 2018-03-08 |
KR102240249B1 (ko) | 2021-04-13 |
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