SG11201705265RA - Composition for forming underlayer and method for forming underlayer therewith - Google Patents

Composition for forming underlayer and method for forming underlayer therewith

Info

Publication number
SG11201705265RA
SG11201705265RA SG11201705265RA SG11201705265RA SG11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA
Authority
SG
Singapore
Prior art keywords
forming underlayer
therewith
composition
underlayer
forming
Prior art date
Application number
SG11201705265RA
Other languages
English (en)
Inventor
Masato Suzuki
Yusuke Hama
Hiroshi Yanagita
Go Noya
Shigemasa Nakasugi
Original Assignee
Az Electronic Mat (Luxembourg) S À R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Mat (Luxembourg) S À R L filed Critical Az Electronic Mat (Luxembourg) S À R L
Publication of SG11201705265RA publication Critical patent/SG11201705265RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/026—Wholly aromatic polyamines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D177/00—Coating compositions based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D177/10—Polyamides derived from aromatically bound amino and carboxyl groups of amino carboxylic acids or of polyamines and polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/02—Polyamines
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11201705265RA 2015-02-12 2016-02-02 Composition for forming underlayer and method for forming underlayer therewith SG11201705265RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015025574A JP2016148777A (ja) 2015-02-12 2015-02-12 下層膜形成用組成物、およびそれを用いた下層膜の形成方法
PCT/EP2016/000166 WO2016128117A1 (en) 2015-02-12 2016-02-02 Composition for forming underlayer and method for forming underlayer therewith

Publications (1)

Publication Number Publication Date
SG11201705265RA true SG11201705265RA (en) 2017-07-28

Family

ID=55349778

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201705265RA SG11201705265RA (en) 2015-02-12 2016-02-02 Composition for forming underlayer and method for forming underlayer therewith

Country Status (8)

Country Link
US (1) US10451971B2 (zh)
EP (1) EP3256537B1 (zh)
JP (2) JP2016148777A (zh)
KR (1) KR102292777B1 (zh)
CN (1) CN107207903B (zh)
SG (1) SG11201705265RA (zh)
TW (1) TWI682975B (zh)
WO (1) WO2016128117A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10435555B2 (en) * 2014-05-29 2019-10-08 Az Electronic Materials (Luxembourg) S.A.R.L Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition
JP2018100249A (ja) 2016-12-21 2018-06-28 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 新規化合物、半導体材料、およびこれを用いた膜および半導体の製造方法
KR20210137678A (ko) * 2020-05-11 2021-11-18 동우 화인켐 주식회사 중합체 및 이를 포함하는 하드마스크용 조성물

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CA1255142A (en) 1985-03-11 1989-06-06 Edward C. Fredericks Method and composition of matter for improving conductor resolution in microelectronic circuits
JPH0832815B2 (ja) 1988-06-09 1996-03-29 日本石油株式会社 高分子組成物
US5120475A (en) * 1989-12-14 1992-06-09 The Mead Corporation Method for preparing microcapsules having improved pre-walls, and microcapsules and photosensitive materials produced thereby
TWI363251B (en) 2003-07-30 2012-05-01 Nissan Chemical Ind Ltd Sublayer coating-forming composition for lithography containing compound having protected carboxy group
JP2008081720A (ja) * 2006-08-30 2008-04-10 Fujifilm Corp 分解性樹脂組成物及びそれを用いるパターン形成材料
US8430952B2 (en) 2006-09-29 2013-04-30 Eastman Kodak Company Water soluble branched polyethyleneimine compositions
US7914410B2 (en) 2006-09-29 2011-03-29 Shimano Inc. Bicycle chain connecting link
JP5359865B2 (ja) * 2007-04-12 2013-12-04 日産化学工業株式会社 オリゴアニリン化合物
KR20140095541A (ko) * 2007-05-23 2014-08-01 제이에스알 가부시끼가이샤 패턴 형성 방법 및 그 방법에 사용하는 수지 조성물
CN101679633B (zh) * 2007-06-15 2012-09-19 日产化学工业株式会社 热固化膜形成用树脂组合物
US9243110B2 (en) * 2010-11-01 2016-01-26 Nissan Chemical Industries, Ltd. Triazine ring-containing polymer and film-forming composition containing same
KR20130034617A (ko) * 2011-09-28 2013-04-05 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 패턴 형성 방법 및 중합체
JP6066092B2 (ja) * 2011-09-29 2017-01-25 日産化学工業株式会社 ジアリールアミンノボラック樹脂
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KR101615596B1 (ko) 2011-12-05 2016-04-26 닛산 가가쿠 고교 가부시키 가이샤 아닐린 올리고머 화합물의 제조 방법
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JP2014010408A (ja) * 2012-07-02 2014-01-20 Nissan Chem Ind Ltd 導電性化合物を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
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JP6332645B2 (ja) * 2013-05-13 2018-05-30 日産化学工業株式会社 ビスフェノールアルデヒドを用いたノボラック樹脂含有レジスト下層膜形成組成物
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US10435555B2 (en) 2014-05-29 2019-10-08 Az Electronic Materials (Luxembourg) S.A.R.L Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition

Also Published As

Publication number Publication date
CN107207903A (zh) 2017-09-26
KR20170117513A (ko) 2017-10-23
TW201638253A (zh) 2016-11-01
KR102292777B1 (ko) 2021-08-26
EP3256537B1 (en) 2021-04-14
CN107207903B (zh) 2020-08-14
EP3256537A1 (en) 2017-12-20
TWI682975B (zh) 2020-01-21
WO2016128117A1 (en) 2016-08-18
JP6657228B2 (ja) 2020-03-04
US20180039178A1 (en) 2018-02-08
JP2018508029A (ja) 2018-03-22
JP2016148777A (ja) 2016-08-18
US10451971B2 (en) 2019-10-22

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