SG11201705265RA - Composition for forming underlayer and method for forming underlayer therewith - Google Patents

Composition for forming underlayer and method for forming underlayer therewith

Info

Publication number
SG11201705265RA
SG11201705265RA SG11201705265RA SG11201705265RA SG11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA SG 11201705265R A SG11201705265R A SG 11201705265RA
Authority
SG
Singapore
Prior art keywords
forming underlayer
therewith
composition
underlayer
forming
Prior art date
Application number
SG11201705265RA
Inventor
Masato Suzuki
Yusuke Hama
Hiroshi Yanagita
Go Noya
Shigemasa Nakasugi
Original Assignee
Az Electronic Mat (Luxembourg) S À R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Mat (Luxembourg) S À R L filed Critical Az Electronic Mat (Luxembourg) S À R L
Publication of SG11201705265RA publication Critical patent/SG11201705265RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/026—Wholly aromatic polyamines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D177/00—Coating compositions based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D177/10—Polyamides derived from aromatically bound amino and carboxyl groups of amino carboxylic acids or of polyamines and polycarboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/02—Polyamines
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
SG11201705265RA 2015-02-12 2016-02-02 Composition for forming underlayer and method for forming underlayer therewith SG11201705265RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015025574A JP2016148777A (en) 2015-02-12 2015-02-12 Composition for forming underlay film, and formation method of underlay film using same
PCT/EP2016/000166 WO2016128117A1 (en) 2015-02-12 2016-02-02 Composition for forming underlayer and method for forming underlayer therewith

Publications (1)

Publication Number Publication Date
SG11201705265RA true SG11201705265RA (en) 2017-07-28

Family

ID=55349778

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201705265RA SG11201705265RA (en) 2015-02-12 2016-02-02 Composition for forming underlayer and method for forming underlayer therewith

Country Status (8)

Country Link
US (1) US10451971B2 (en)
EP (1) EP3256537B1 (en)
JP (2) JP2016148777A (en)
KR (1) KR102292777B1 (en)
CN (1) CN107207903B (en)
SG (1) SG11201705265RA (en)
TW (1) TWI682975B (en)
WO (1) WO2016128117A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3150668A4 (en) * 2014-05-29 2018-01-17 AZ Electronic Materials (Luxembourg) S.à.r.l. Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition
JP2018100249A (en) * 2016-12-21 2018-06-28 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ Novel compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same

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CA1255142A (en) * 1985-03-11 1989-06-06 Edward C. Fredericks Method and composition of matter for improving conductor resolution in microelectronic circuits
JPH0832815B2 (en) * 1988-06-09 1996-03-29 日本石油株式会社 Polymer composition
US5120475A (en) * 1989-12-14 1992-06-09 The Mead Corporation Method for preparing microcapsules having improved pre-walls, and microcapsules and photosensitive materials produced thereby
TWI363251B (en) 2003-07-30 2012-05-01 Nissan Chemical Ind Ltd Sublayer coating-forming composition for lithography containing compound having protected carboxy group
JP2008081720A (en) 2006-08-30 2008-04-10 Fujifilm Corp Decomposable resin composition and pattern-forming material using the same
US8430952B2 (en) * 2006-09-29 2013-04-30 Eastman Kodak Company Water soluble branched polyethyleneimine compositions
US7914410B2 (en) 2006-09-29 2011-03-29 Shimano Inc. Bicycle chain connecting link
CN104821375B (en) * 2007-04-12 2018-03-02 日产化学工业株式会社 Oligoaniline compound
KR20120032024A (en) * 2007-05-23 2012-04-04 제이에스알 가부시끼가이샤 Radiation-sensitive resin composition
WO2008153101A1 (en) * 2007-06-15 2008-12-18 Nissan Chemical Industries, Ltd. Resin composition for forming heat-cured film
CN103261273B (en) * 2010-11-01 2015-09-16 日产化学工业株式会社 Polymkeric substance containing triazine ring and the film-forming compositions containing this polymkeric substance
KR20130034617A (en) * 2011-09-28 2013-04-05 제이에스알 가부시끼가이샤 Composition for forming resist lower layer film, process for forming pattern and polymer
KR101989313B1 (en) 2011-09-29 2019-06-14 닛산 가가쿠 가부시키가이샤 Diarylamine novolac resin
JP5767615B2 (en) * 2011-10-07 2015-08-19 富士フイルム株式会社 Underlayer film composition for imprint and pattern forming method using the same
EP2789668B1 (en) * 2011-12-05 2018-03-28 Nissan Chemical Industries, Ltd. Composition for forming antistatic film and oligomer compound
US8697336B2 (en) * 2011-12-15 2014-04-15 Az Electronic Materials Usa Corp. Composition for forming a developable bottom antireflective coating
JP2014010408A (en) * 2012-07-02 2014-01-20 Nissan Chem Ind Ltd Resist lower layer film forming composition comprising conductive compound, and method for forming resist pattern using the same
FR2993631B1 (en) * 2012-07-18 2015-04-10 Snecma DEVICE FOR BLIND CONNECTION BETWEEN FLUID, ELECTRICAL OR SIMILAR POWER SUPPLIES AND A RECEIVER CONTROL MECHANISM
JP6332645B2 (en) * 2013-05-13 2018-05-30 日産化学工業株式会社 Novolak resin-containing resist underlayer film forming composition using bisphenol aldehyde
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EP3150668A4 (en) * 2014-05-29 2018-01-17 AZ Electronic Materials (Luxembourg) S.à.r.l. Void forming composition, semiconductor device provided with voids formed using composition, and method for manufacturing semiconductor device using composition

Also Published As

Publication number Publication date
US20180039178A1 (en) 2018-02-08
US10451971B2 (en) 2019-10-22
CN107207903B (en) 2020-08-14
TW201638253A (en) 2016-11-01
JP6657228B2 (en) 2020-03-04
TWI682975B (en) 2020-01-21
KR20170117513A (en) 2017-10-23
JP2016148777A (en) 2016-08-18
CN107207903A (en) 2017-09-26
KR102292777B1 (en) 2021-08-26
EP3256537A1 (en) 2017-12-20
JP2018508029A (en) 2018-03-22
WO2016128117A1 (en) 2016-08-18
EP3256537B1 (en) 2021-04-14

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