SG11201701418RA - Solar cell and manufacturing method of solar cell - Google Patents
Solar cell and manufacturing method of solar cellInfo
- Publication number
- SG11201701418RA SG11201701418RA SG11201701418RA SG11201701418RA SG11201701418RA SG 11201701418R A SG11201701418R A SG 11201701418RA SG 11201701418R A SG11201701418R A SG 11201701418RA SG 11201701418R A SG11201701418R A SG 11201701418RA SG 11201701418R A SG11201701418R A SG 11201701418RA
- Authority
- SG
- Singapore
- Prior art keywords
- solar cell
- manufacturing
- solar
- cell
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014180220A JP5830147B1 (ja) | 2014-09-04 | 2014-09-04 | 太陽電池及び太陽電池の製造方法 |
PCT/JP2015/002959 WO2016035229A1 (fr) | 2014-09-04 | 2015-06-12 | Cellule solaire et son procédé de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201701418RA true SG11201701418RA (en) | 2017-03-30 |
Family
ID=54784370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201701418RA SG11201701418RA (en) | 2014-09-04 | 2015-06-12 | Solar cell and manufacturing method of solar cell |
Country Status (12)
Country | Link |
---|---|
US (1) | US20170263791A1 (fr) |
EP (1) | EP3190628B1 (fr) |
JP (1) | JP5830147B1 (fr) |
KR (1) | KR102420807B1 (fr) |
CN (1) | CN106796964B (fr) |
BR (1) | BR112017003041A2 (fr) |
ES (1) | ES2780048T3 (fr) |
MY (1) | MY180755A (fr) |
RU (1) | RU2017105087A (fr) |
SG (1) | SG11201701418RA (fr) |
TW (1) | TWI673886B (fr) |
WO (1) | WO2016035229A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6946706B2 (ja) * | 2017-04-18 | 2021-10-06 | 市光工業株式会社 | 光変換装置の製造方法及び光変換装置 |
CN108133975B (zh) * | 2018-01-29 | 2024-06-07 | 泰州隆基乐叶光伏科技有限公司 | 一种多晶掺镓太阳电池及其制备方法 |
CN108172637A (zh) * | 2018-01-29 | 2018-06-15 | 泰州隆基乐叶光伏科技有限公司 | 一种多晶掺镓背钝化太阳电池及其制备方法 |
CN108133976A (zh) * | 2018-01-29 | 2018-06-08 | 泰州隆基乐叶光伏科技有限公司 | 一种单晶掺镓背钝化太阳电池及其制备方法 |
CN111509082B (zh) * | 2020-03-20 | 2024-05-24 | 中国科学院宁波材料技术与工程研究所 | 掺镓多晶硅薄膜制备方法及其在太阳电池的应用 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000073542A1 (fr) | 1999-05-28 | 2000-12-07 | Shin-Etsu Handotai Co., Ltd. | Monocristal de czochralski dope au ga et son procede de fabrication |
JP2002076399A (ja) * | 2000-08-30 | 2002-03-15 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法およびこの方法で製造された太陽電池セル |
JP2002083981A (ja) * | 2000-09-07 | 2002-03-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルおよびその製造方法 |
KR100790956B1 (ko) * | 2000-10-06 | 2008-01-03 | 신에쯔 한도타이 가부시키가이샤 | 태양전지 및 그 제조방법 |
JP2003282901A (ja) * | 2002-03-27 | 2003-10-03 | Shin Etsu Handotai Co Ltd | 太陽電池モジュールの製造方法 |
JP4118187B2 (ja) * | 2003-05-09 | 2008-07-16 | 信越半導体株式会社 | 太陽電池の製造方法 |
KR20100032900A (ko) * | 2007-07-18 | 2010-03-26 | 아이엠이씨 | 에미터 구조체를 제조하는 방법 및 그로부터 생성되는 에미터 구조체들 |
WO2009052511A2 (fr) * | 2007-10-18 | 2009-04-23 | Belano Holdings, Ltd. | Piles solaires à monosilicium |
CN102203953B (zh) * | 2009-06-18 | 2016-06-01 | Lg电子株式会社 | 太阳能电池及其制造方法 |
KR101745683B1 (ko) * | 2011-01-14 | 2017-06-09 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
MY181635A (en) * | 2011-06-03 | 2020-12-30 | Memc Singapore Pte Ltd | Processes for suppressing minority carrier lifetime degradation in silicon wafers |
JP5865490B2 (ja) * | 2012-04-18 | 2016-02-17 | 株式会社日立製作所 | 太陽電池およびその製造方法 |
KR101631450B1 (ko) * | 2013-03-05 | 2016-06-17 | 엘지전자 주식회사 | 태양 전지 |
-
2014
- 2014-09-04 JP JP2014180220A patent/JP5830147B1/ja active Active
-
2015
- 2015-06-12 KR KR1020177003896A patent/KR102420807B1/ko active IP Right Grant
- 2015-06-12 CN CN201580044524.3A patent/CN106796964B/zh active Active
- 2015-06-12 RU RU2017105087A patent/RU2017105087A/ru unknown
- 2015-06-12 SG SG11201701418RA patent/SG11201701418RA/en unknown
- 2015-06-12 MY MYPI2017700470A patent/MY180755A/en unknown
- 2015-06-12 EP EP15838584.9A patent/EP3190628B1/fr active Active
- 2015-06-12 WO PCT/JP2015/002959 patent/WO2016035229A1/fr active Application Filing
- 2015-06-12 BR BR112017003041A patent/BR112017003041A2/pt not_active Application Discontinuation
- 2015-06-12 ES ES15838584T patent/ES2780048T3/es active Active
- 2015-06-12 US US15/503,854 patent/US20170263791A1/en not_active Abandoned
- 2015-09-02 TW TW104129041A patent/TWI673886B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP3190628B1 (fr) | 2020-01-15 |
CN106796964B (zh) | 2018-11-20 |
EP3190628A1 (fr) | 2017-07-12 |
JP5830147B1 (ja) | 2015-12-09 |
KR102420807B1 (ko) | 2022-07-13 |
TW201626593A (zh) | 2016-07-16 |
EP3190628A4 (fr) | 2018-08-22 |
CN106796964A (zh) | 2017-05-31 |
MY180755A (en) | 2020-12-08 |
TWI673886B (zh) | 2019-10-01 |
US20170263791A1 (en) | 2017-09-14 |
KR20170053614A (ko) | 2017-05-16 |
RU2017105087A (ru) | 2018-10-04 |
BR112017003041A2 (pt) | 2017-11-21 |
ES2780048T3 (es) | 2020-08-21 |
WO2016035229A1 (fr) | 2016-03-10 |
JP2016054255A (ja) | 2016-04-14 |
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