SG11201608130QA - Polishing composition - Google Patents

Polishing composition

Info

Publication number
SG11201608130QA
SG11201608130QA SG11201608130QA SG11201608130QA SG11201608130QA SG 11201608130Q A SG11201608130Q A SG 11201608130QA SG 11201608130Q A SG11201608130Q A SG 11201608130QA SG 11201608130Q A SG11201608130Q A SG 11201608130QA SG 11201608130Q A SG11201608130Q A SG 11201608130QA
Authority
SG
Singapore
Prior art keywords
polishing composition
polishing
composition
Prior art date
Application number
SG11201608130QA
Other languages
English (en)
Inventor
Masashi Teramoto
Tatsuya Nakauchi
Noriaki Sugita
Shinichi Haba
Akiko Miyamoto
Original Assignee
Nitta Haas Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc filed Critical Nitta Haas Inc
Publication of SG11201608130QA publication Critical patent/SG11201608130QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201608130QA 2014-03-31 2015-03-30 Polishing composition SG11201608130QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014073436A JP6389630B2 (ja) 2014-03-31 2014-03-31 研磨用組成物
PCT/JP2015/059923 WO2015152150A1 (ja) 2014-03-31 2015-03-30 研磨用組成物

Publications (1)

Publication Number Publication Date
SG11201608130QA true SG11201608130QA (en) 2016-11-29

Family

ID=54240473

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608130QA SG11201608130QA (en) 2014-03-31 2015-03-30 Polishing composition

Country Status (9)

Country Link
US (1) US10077380B2 (ko)
JP (1) JP6389630B2 (ko)
KR (1) KR102408832B1 (ko)
CN (1) CN106133108A (ko)
DE (1) DE112015001572T5 (ko)
MY (1) MY188615A (ko)
SG (1) SG11201608130QA (ko)
TW (1) TWI672367B (ko)
WO (1) WO2015152150A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107142083A (zh) * 2017-06-16 2017-09-08 宿迁德特材料科技有限公司 一种纤维素纳米纤维基研磨液及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11140427A (ja) * 1997-11-13 1999-05-25 Kobe Steel Ltd 研磨液および研磨方法
JP2004128069A (ja) 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
JP4593064B2 (ja) 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4212861B2 (ja) 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
JP4912592B2 (ja) * 2002-11-08 2012-04-11 株式会社フジミインコーポレーテッド 研磨用組成物及びその使用方法
WO2004074180A1 (ja) * 2003-02-18 2004-09-02 Tytemn Corporation 耐アルカリ性繭型コロイダルシリカ粒子及びその製造方法
JP2006108151A (ja) * 2004-09-30 2006-04-20 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法
JP4852302B2 (ja) * 2004-12-01 2012-01-11 信越半導体株式会社 研磨剤の製造方法及びそれにより製造された研磨剤並びにシリコンウエーハの製造方法
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
JP5441578B2 (ja) * 2009-09-11 2014-03-12 花王株式会社 研磨液組成物
EP2500929B1 (en) 2009-11-11 2018-06-20 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and polishing method for substrate using same
DE112011101518B4 (de) * 2010-04-30 2019-05-09 Sumco Corporation Verfahren zum Polieren von Siliziumwafern
DE112012004431T5 (de) * 2011-10-24 2014-07-10 Fujimi Incorporated Zusammensetzung zu Polierzwecken, Polierverfahren unter Verwendung derselben und Verfahren zur Herstellung eines Substrates
US20140319411A1 (en) 2011-11-16 2014-10-30 Nissan Chemical Industries, Ltd. Semiconductor wafer polishing liquid composition
JP2014041978A (ja) * 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
CN104603227B (zh) 2012-08-31 2017-03-08 福吉米株式会社 研磨用组合物和基板的制造方法
US9566685B2 (en) * 2013-02-21 2017-02-14 Fujimi Incorporated Polishing composition and method for producing polished article

Also Published As

Publication number Publication date
JP6389630B2 (ja) 2018-09-12
CN106133108A (zh) 2016-11-16
DE112015001572T5 (de) 2017-02-16
KR20160138127A (ko) 2016-12-02
JP2015196691A (ja) 2015-11-09
TW201544583A (zh) 2015-12-01
TWI672367B (zh) 2019-09-21
US10077380B2 (en) 2018-09-18
WO2015152150A1 (ja) 2015-10-08
KR102408832B1 (ko) 2022-06-13
US20170174940A1 (en) 2017-06-22
MY188615A (en) 2021-12-22

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