SG11201606945PA - Workpiece double-disc grinding method - Google Patents

Workpiece double-disc grinding method

Info

Publication number
SG11201606945PA
SG11201606945PA SG11201606945PA SG11201606945PA SG11201606945PA SG 11201606945P A SG11201606945P A SG 11201606945PA SG 11201606945P A SG11201606945P A SG 11201606945PA SG 11201606945P A SG11201606945P A SG 11201606945PA SG 11201606945P A SG11201606945P A SG 11201606945PA
Authority
SG
Singapore
Prior art keywords
grinding method
disc grinding
workpiece double
workpiece
double
Prior art date
Application number
SG11201606945PA
Inventor
Yoshihiro Usami
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of SG11201606945PA publication Critical patent/SG11201606945PA/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10Single-purpose machines or devices
    • B24B7/16Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02024Mirror polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
SG11201606945PA 2014-02-20 2015-01-23 Workpiece double-disc grinding method SG11201606945PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014031004A JP6040947B2 (en) 2014-02-20 2014-02-20 Double-head grinding method for workpieces
PCT/JP2015/000295 WO2015125412A1 (en) 2014-02-20 2015-01-23 Double-headed workpiece grinding method

Publications (1)

Publication Number Publication Date
SG11201606945PA true SG11201606945PA (en) 2016-10-28

Family

ID=53877940

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606945PA SG11201606945PA (en) 2014-02-20 2015-01-23 Workpiece double-disc grinding method

Country Status (8)

Country Link
US (1) US9962802B2 (en)
JP (1) JP6040947B2 (en)
KR (1) KR102098260B1 (en)
CN (1) CN105980103B (en)
DE (1) DE112015000522T5 (en)
SG (1) SG11201606945PA (en)
TW (1) TWI602656B (en)
WO (1) WO2015125412A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7159861B2 (en) 2018-12-27 2022-10-25 株式会社Sumco Double-headed grinding method
CN110118683B (en) * 2019-06-12 2020-06-19 华东理工大学 Micro-sample grinding device
CN114227524A (en) * 2021-12-30 2022-03-25 西安奕斯伟材料科技有限公司 Double-side polishing apparatus and double-side polishing method

Family Cites Families (27)

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US3616578A (en) * 1969-01-10 1971-11-02 Ingersoll Milling Machine Co Method for turning workpieces
JPS5733928A (en) * 1980-07-29 1982-02-24 Inoue Japax Res Inc Carbon electrode for electric discharge machining
JPS5871062A (en) * 1981-10-24 1983-04-27 Ntn Toyo Bearing Co Ltd Machining method of inner ring in tapered roller bearing
US5643051A (en) * 1995-06-16 1997-07-01 The University Of Connecticut Centerless grinding process and apparatus therefor
KR100227924B1 (en) * 1995-07-28 1999-11-01 가이데 히사오 Wafer fabricating method and polishing method therefor and apparatus thereof
JP3471167B2 (en) * 1996-05-21 2003-11-25 昭和電工株式会社 Method for producing cubic boron nitride
TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
JP2000052209A (en) * 1998-08-06 2000-02-22 Nippon Sheet Glass Co Ltd Double-headed flat surface grinding device and grinding method using it
JP2005238444A (en) * 1999-05-07 2005-09-08 Shin Etsu Handotai Co Ltd Double-sided simultaneous grinding method, double-sided simultaneous grinding machine, double-sided simultaneous lapping method and double-sided simultaneous lapping machine
GB2357720B (en) * 1999-10-27 2003-05-07 Unova Uk Ltd Crankpin grinding method
DE10023002B4 (en) * 2000-05-11 2006-10-26 Siltronic Ag Set of carriers and its use
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
JP4038429B2 (en) * 2000-10-26 2008-01-23 信越半導体株式会社 Wafer manufacturing method, polishing apparatus, and wafer
DE10058305A1 (en) * 2000-11-24 2002-06-06 Wacker Siltronic Halbleitermat Process for the surface polishing of silicon wafers
JP4093793B2 (en) * 2002-04-30 2008-06-04 信越半導体株式会社 Semiconductor wafer manufacturing method and wafer
JP2005246510A (en) * 2004-03-02 2005-09-15 Nissan Motor Co Ltd Highly smooth grinding method for metal material, and highly smooth grinding device for metal material
JP4420023B2 (en) * 2004-08-17 2010-02-24 信越半導体株式会社 Semiconductor wafer measurement method, manufacturing process management method, and semiconductor wafer manufacturing method
CN101056741B (en) * 2004-11-19 2010-12-08 丰田万磨株式会社 Grinding wheel
JP4670566B2 (en) * 2005-09-29 2011-04-13 信越半導体株式会社 Semiconductor wafer double-head grinding apparatus, hydrostatic pad and double-head grinding method using the same
JP2007210054A (en) * 2006-02-08 2007-08-23 Toshiba Ceramics Co Ltd Cup type grinding wheel, double-end grinder and double-end grinding method
JP5141072B2 (en) * 2006-04-25 2013-02-13 日本精工株式会社 Manufacturing method of outer ring for bearing unit
DE102006032455A1 (en) * 2006-07-13 2008-04-10 Siltronic Ag Method for simultaneous double-sided grinding of a plurality of semiconductor wafers and semiconductor wafer with excellent flatness
KR100772034B1 (en) * 2006-12-08 2007-10-31 주식회사 썬텍인더스트리 Method for preparing abrasive sheet having coated three-dimensional abrasive structures
JP2009094326A (en) 2007-10-10 2009-04-30 Disco Abrasive Syst Ltd Method of grinding wafer
JP4985451B2 (en) * 2008-02-14 2012-07-25 信越半導体株式会社 Double-head grinding apparatus for workpiece and double-head grinding method for workpiece
JP6032087B2 (en) * 2012-03-30 2016-11-24 三菱化学株式会社 Method for producing group 13 nitride crystal substrate
JP5724958B2 (en) * 2012-07-03 2015-05-27 信越半導体株式会社 Double-head grinding apparatus and double-head grinding method for workpiece

Also Published As

Publication number Publication date
JP2015155129A (en) 2015-08-27
CN105980103B (en) 2017-12-01
TW201600247A (en) 2016-01-01
JP6040947B2 (en) 2016-12-07
US20170136596A1 (en) 2017-05-18
DE112015000522T5 (en) 2016-10-13
US9962802B2 (en) 2018-05-08
CN105980103A (en) 2016-09-28
KR102098260B1 (en) 2020-04-07
WO2015125412A1 (en) 2015-08-27
KR20160124110A (en) 2016-10-26
TWI602656B (en) 2017-10-21

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