SG11201606136UA - Method and device for bonding substrates - Google Patents

Method and device for bonding substrates

Info

Publication number
SG11201606136UA
SG11201606136UA SG11201606136UA SG11201606136UA SG11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA
Authority
SG
Singapore
Prior art keywords
bonding substrates
substrates
bonding
Prior art date
Application number
SG11201606136UA
Other languages
English (en)
Inventor
Friedrich Paul Lindner
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG11201606136UA publication Critical patent/SG11201606136UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/447—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of pressure, e.g. thermo-compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)
SG11201606136UA 2014-02-03 2014-02-03 Method and device for bonding substrates SG11201606136UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/052037 WO2015113641A1 (fr) 2014-02-03 2014-02-03 Procédé et dispositif de liaison de substrats

Publications (1)

Publication Number Publication Date
SG11201606136UA true SG11201606136UA (en) 2016-09-29

Family

ID=50064594

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606136UA SG11201606136UA (en) 2014-02-03 2014-02-03 Method and device for bonding substrates

Country Status (8)

Country Link
US (3) US10014193B2 (fr)
EP (2) EP3103135B1 (fr)
JP (1) JP6395847B2 (fr)
KR (3) KR102259484B1 (fr)
CN (3) CN110707026A (fr)
SG (1) SG11201606136UA (fr)
TW (3) TWI660845B (fr)
WO (1) WO2015113641A1 (fr)

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CN114334625A (zh) 2016-02-16 2022-04-12 Ev 集团 E·索尔纳有限责任公司 用于接合衬底的方法
CN109196351B (zh) 2016-02-17 2021-08-20 Ev 集团 E·索尔纳有限责任公司 计量设备和计量方法
JP6579262B2 (ja) * 2016-03-28 2019-09-25 株式会社ニコン 基板貼り合わせ装置および基板貼り合わせ方法
CN109416406B (zh) 2016-07-05 2023-06-20 深圳帧观德芯科技有限公司 具有不同热膨胀系数的接合材料
CN115954300A (zh) * 2016-09-29 2023-04-11 Ev 集团 E·索尔纳有限责任公司 用于结合两个基板的装置和方法
SG11201907047SA (en) * 2017-03-16 2019-08-27 Ev Group E Thallner Gmbh Method for bonding at least three substrates
WO2018171861A1 (fr) 2017-03-20 2018-09-27 Ev Group E. Thallner Gmbh Procédé pour orienter deux substrats
JP6854696B2 (ja) * 2017-05-02 2021-04-07 東京エレクトロン株式会社 接合装置および接合方法
EP3501037B1 (fr) 2017-09-21 2020-01-29 EV Group E. Thallner GmbH Appareil et méthode pour liaison de substrats
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872804B2 (en) * 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
EP3759424B1 (fr) 2018-02-27 2024-05-29 EV Group E. Thallner GmbH Zone de repères, procédé et dispositif de détermination de positions
KR102619624B1 (ko) 2018-11-13 2023-12-29 삼성전자주식회사 기판합착 장치 및 방법
JP6818076B2 (ja) * 2019-04-17 2021-01-20 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板を接合する装置および方法
EP4354495A2 (fr) 2020-06-29 2024-04-17 EV Group E. Thallner GmbH Procédé et dispositif de liaison de substrats
JPWO2022138280A1 (fr) * 2020-12-25 2022-06-30
TWI776665B (zh) * 2021-09-03 2022-09-01 天虹科技股份有限公司 鍵合對準機構及應用該鍵合對準機構的鍵合機台
WO2024046578A1 (fr) 2022-09-02 2024-03-07 Ev Group E. Thallner Gmbh Support de substrat sous vide à joint à vide optimisé

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US6960743B2 (en) * 2000-12-05 2005-11-01 Ibiden Co., Ltd. Ceramic substrate for semiconductor manufacturing, and method of manufacturing the ceramic substrate
US7102726B2 (en) * 2002-03-15 2006-09-05 Lg. Philips Lcd Co., Ltd. System for fabricating liquid crystal display and method of fabricating liquid crystal display using the same
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JP5314607B2 (ja) * 2010-01-20 2013-10-16 東京エレクトロン株式会社 接合装置、接合方法、プログラム及びコンピュータ記憶媒体
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JP2012250230A (ja) * 2011-06-02 2012-12-20 Tokyo Ohka Kogyo Co Ltd 加熱装置、塗布装置及び加熱方法
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US10279575B2 (en) 2013-05-29 2019-05-07 Ev Group E. Thallner Gmbh Device and method for bonding substrates
JP6258479B2 (ja) 2013-06-17 2018-01-10 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 複数の基板を位置合わせする装置及び方法
EP3017462B9 (fr) 2013-07-04 2017-12-27 EV Group E. Thallner GmbH Procédé et dispositif permettant de traiter la surface d'un substrat
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Also Published As

Publication number Publication date
EP3103135B1 (fr) 2021-05-12
US20180277403A1 (en) 2018-09-27
CN110707027A (zh) 2020-01-17
TWI752791B (zh) 2022-01-11
JP2017511970A (ja) 2017-04-27
CN110707026A (zh) 2020-01-17
CN105960703A (zh) 2016-09-21
US10971378B2 (en) 2021-04-06
KR20160115930A (ko) 2016-10-06
KR102259484B1 (ko) 2021-06-02
TWI660845B (zh) 2019-06-01
WO2015113641A1 (fr) 2015-08-06
TWI750463B (zh) 2021-12-21
CN110707027B (zh) 2023-10-31
EP3103135A1 (fr) 2016-12-14
CN105960703B (zh) 2019-12-03
KR102009551B1 (ko) 2019-08-09
KR20200138415A (ko) 2020-12-09
KR20190093708A (ko) 2019-08-09
EP3312871A1 (fr) 2018-04-25
TW201534476A (zh) 2015-09-16
JP6395847B2 (ja) 2018-09-26
KR102186019B1 (ko) 2020-12-04
US20210183666A1 (en) 2021-06-17
TW201927577A (zh) 2019-07-16
US10014193B2 (en) 2018-07-03
TW202118639A (zh) 2021-05-16
US20160336203A1 (en) 2016-11-17

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