SG11201604777YA - Method allowing the creation of nanometric structures by self-assembly of block copolymers - Google Patents

Method allowing the creation of nanometric structures by self-assembly of block copolymers

Info

Publication number
SG11201604777YA
SG11201604777YA SG11201604777YA SG11201604777YA SG11201604777YA SG 11201604777Y A SG11201604777Y A SG 11201604777YA SG 11201604777Y A SG11201604777Y A SG 11201604777YA SG 11201604777Y A SG11201604777Y A SG 11201604777YA SG 11201604777Y A SG11201604777Y A SG 11201604777YA
Authority
SG
Singapore
Prior art keywords
creation
self
assembly
block copolymers
method allowing
Prior art date
Application number
SG11201604777YA
Other languages
English (en)
Inventor
Muhammad Mumtaz
Karim Aissou
Cyril Brochon
Eric Cloutet
Guillaume Fleury
Georges Hadziioannou
Christophe Navarro
Celia Nicolet
Xavier Chevalier
Original Assignee
Arkema France
Centre Nat Rech Scient
Inst Polytechnique Bordeaux
Univ Bordeaux
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arkema France, Centre Nat Rech Scient, Inst Polytechnique Bordeaux, Univ Bordeaux filed Critical Arkema France
Publication of SG11201604777YA publication Critical patent/SG11201604777YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00428—Etch mask forming processes not provided for in groups B81C1/00396 - B81C1/0042
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Graft Or Block Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Liquid Crystal Substances (AREA)
SG11201604777YA 2013-12-13 2014-12-11 Method allowing the creation of nanometric structures by self-assembly of block copolymers SG11201604777YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1362597A FR3014888B1 (fr) 2013-12-13 2013-12-13 Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres a blocs
PCT/FR2014/053279 WO2015087005A1 (fr) 2013-12-13 2014-12-11 Procédé permettant la création de structures nanométriques par l'auto-assemblage de copolymères a blocs

Publications (1)

Publication Number Publication Date
SG11201604777YA true SG11201604777YA (en) 2016-07-28

Family

ID=50828979

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201604777YA SG11201604777YA (en) 2013-12-13 2014-12-11 Method allowing the creation of nanometric structures by self-assembly of block copolymers

Country Status (9)

Country Link
US (1) US20160333221A1 (zh)
EP (1) EP3080218A1 (zh)
JP (1) JP6404353B2 (zh)
KR (1) KR101990187B1 (zh)
CN (1) CN105980494A (zh)
FR (1) FR3014888B1 (zh)
SG (1) SG11201604777YA (zh)
TW (1) TWI547519B (zh)
WO (1) WO2015087005A1 (zh)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3078692B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
CN105980342B (zh) 2013-12-06 2019-02-15 株式会社Lg化学 单体和嵌段共聚物
EP3078691B1 (en) 2013-12-06 2018-04-18 LG Chem, Ltd. Block copolymer
JP6521974B2 (ja) 2013-12-06 2019-05-29 エルジー・ケム・リミテッド ブロック共重合体
WO2015084123A1 (ko) 2013-12-06 2015-06-11 주식회사 엘지화학 블록 공중합체
EP3101043B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
US10087276B2 (en) 2013-12-06 2018-10-02 Lg Chem, Ltd. Block copolymer
WO2015084125A1 (ko) 2013-12-06 2015-06-11 주식회사 엘지화학 블록 공중합체
CN105899556B (zh) 2013-12-06 2019-04-19 株式会社Lg化学 嵌段共聚物
JP6496318B2 (ja) 2013-12-06 2019-04-03 エルジー・ケム・リミテッド ブロック共重合体
JP6432846B2 (ja) 2013-12-06 2018-12-05 エルジー・ケム・リミテッド ブロック共重合体
WO2015084131A1 (ko) 2013-12-06 2015-06-11 주식회사 엘지화학 블록 공중합체
EP3078689B1 (en) * 2013-12-06 2020-12-02 LG Chem, Ltd. Block copolymer
EP3078690B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
JP6637495B2 (ja) 2014-09-30 2020-01-29 エルジー・ケム・リミテッド パターン化基板の製造方法
US10287429B2 (en) 2014-09-30 2019-05-14 Lg Chem, Ltd. Block copolymer
EP3202802B1 (en) 2014-09-30 2022-11-23 LG Chem, Ltd. Block copolymer
US10377894B2 (en) 2014-09-30 2019-08-13 Lg Chem, Ltd. Block copolymer
US10295908B2 (en) 2014-09-30 2019-05-21 Lg Chem, Ltd. Block copolymer
CN107075052B (zh) 2014-09-30 2020-05-29 株式会社Lg化学 嵌段共聚物
EP3202797B1 (en) 2014-09-30 2021-07-07 LG Chem, Ltd. Block copolymer
JP6524220B2 (ja) 2014-09-30 2019-06-05 エルジー・ケム・リミテッド ブロック共重合体
WO2016053011A1 (ko) 2014-09-30 2016-04-07 주식회사 엘지화학 블록 공중합체
US10370529B2 (en) 2014-09-30 2019-08-06 Lg Chem, Ltd. Method of manufacturing patterned substrate
FR3042794B1 (fr) * 2015-10-23 2020-03-27 Arkema France Procede permettant la creation de structures nanometriques par l'auto-assemblage de copolymeres di-blocs
FR3089981B1 (fr) * 2018-12-12 2021-01-08 Arkema France Procédé de fabrication d’un copolymère à blocs contenant des ions métalliques

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Publication number Priority date Publication date Assignee Title
US6893705B2 (en) * 2001-05-25 2005-05-17 Massachusetts Institute Of Technology Large area orientation of block copolymer microdomains in thin films
JP3979470B2 (ja) * 2002-09-11 2007-09-19 財団法人理工学振興会 ブロック共重合体、及びミクロ相分離構造膜の製造方法
JP3926360B2 (ja) * 2004-10-13 2007-06-06 株式会社東芝 パターン形成方法およびそれを用いた構造体の加工方法
WO2007122998A1 (ja) * 2006-04-19 2007-11-01 Japan Science And Technology Agency 表面に微小金属塊が整列した基板
US7553760B2 (en) * 2006-10-19 2009-06-30 International Business Machines Corporation Sub-lithographic nano interconnect structures, and method for forming same
JP5598970B2 (ja) * 2010-06-18 2014-10-01 凸版印刷株式会社 微細構造体の製造方法、複合体
US8304493B2 (en) 2010-08-20 2012-11-06 Micron Technology, Inc. Methods of forming block copolymers
JP5652092B2 (ja) * 2010-09-30 2015-01-14 凸版印刷株式会社 ブロック共重合体及びそれを用いた太陽電池
CN103562245B (zh) * 2011-04-22 2015-11-25 Lg化学株式会社 新的二嵌段共聚物、其制备方法以及使用其形成纳米图案的方法
JP2012236866A (ja) * 2011-05-09 2012-12-06 Asahi Kasei E-Materials Corp ブロック共重合体
US8939709B2 (en) * 2011-07-18 2015-01-27 General Electric Company Clearance control for a turbine
JP5988258B2 (ja) * 2011-07-29 2016-09-07 凸版印刷株式会社 微細構造体の製造方法、複合体の製造方法
US10253187B2 (en) * 2011-11-08 2019-04-09 Samsung Electronics Co., Ltd. Nano-structure of block copolymer and method of manufacturing the same
US8513356B1 (en) * 2012-02-10 2013-08-20 Dow Global Technologies Llc Diblock copolymer blend composition
CN102627774A (zh) * 2012-03-26 2012-08-08 复旦大学 一种聚烷基噻吩与聚氧化乙烯的嵌段共聚物及其制备方法

Also Published As

Publication number Publication date
TWI547519B (zh) 2016-09-01
FR3014888A1 (fr) 2015-06-19
WO2015087005A1 (fr) 2015-06-18
KR20160095125A (ko) 2016-08-10
FR3014888B1 (fr) 2017-05-26
JP6404353B2 (ja) 2018-10-10
JP2017503043A (ja) 2017-01-26
US20160333221A1 (en) 2016-11-17
CN105980494A (zh) 2016-09-28
TW201538605A (zh) 2015-10-16
KR101990187B1 (ko) 2019-06-17
EP3080218A1 (fr) 2016-10-19

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