SG11201803090WA - Process for creating nanometric structures by self-assembly of diblock copolymers - Google Patents

Process for creating nanometric structures by self-assembly of diblock copolymers

Info

Publication number
SG11201803090WA
SG11201803090WA SG11201803090WA SG11201803090WA SG11201803090WA SG 11201803090W A SG11201803090W A SG 11201803090WA SG 11201803090W A SG11201803090W A SG 11201803090WA SG 11201803090W A SG11201803090W A SG 11201803090WA SG 11201803090W A SG11201803090W A SG 11201803090WA
Authority
SG
Singapore
Prior art keywords
creating
self
assembly
diblock copolymers
nanometric structures
Prior art date
Application number
SG11201803090WA
Inventor
Christophe Navarro
Celia Nicolet
Karim Aissou
Muhammad Mumtaz
Eric Cloutet
Cyril Brochon
Guillaume Fleury
Georges Hadziioannou
Original Assignee
Arkema France
Inst Polytechnique Bordeaux
Centre Nat Rech Scient
Univ Bordeaux
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arkema France, Inst Polytechnique Bordeaux, Centre Nat Rech Scient, Univ Bordeaux filed Critical Arkema France
Publication of SG11201803090WA publication Critical patent/SG11201803090WA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C08F297/02Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42Block-or graft-polymers containing polysiloxane sequences
    • C08G77/442Block-or graft-polymers containing polysiloxane sequences containing vinyl polymer sequences
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147Film patterning
    • B81C2201/0149Forming nanoscale microstructures using auto-arranging or self-assembling material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
SG11201803090WA 2015-10-23 2016-10-07 Process for creating nanometric structures by self-assembly of diblock copolymers SG11201803090WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1560161A FR3042794B1 (en) 2015-10-23 2015-10-23 PROCESS FOR CREATING NANOMETRIC STRUCTURES BY SELF-ASSEMBLY OF DI-BLOCK COPOLYMERS
PCT/FR2016/052592 WO2017068259A1 (en) 2015-10-23 2016-10-07 Process for creating nanometric structures by self-assembly of diblock copolymers

Publications (1)

Publication Number Publication Date
SG11201803090WA true SG11201803090WA (en) 2018-05-30

Family

ID=55646675

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803090WA SG11201803090WA (en) 2015-10-23 2016-10-07 Process for creating nanometric structures by self-assembly of diblock copolymers

Country Status (9)

Country Link
US (1) US20200231731A1 (en)
EP (1) EP3365400A1 (en)
JP (1) JP6777736B2 (en)
KR (1) KR102191958B1 (en)
CN (1) CN108473812A (en)
FR (1) FR3042794B1 (en)
SG (1) SG11201803090WA (en)
TW (1) TWI655229B (en)
WO (1) WO2017068259A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111065965B (en) * 2017-09-13 2023-11-03 株式会社Lg化学 Method for preparing patterned substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11322869A (en) * 1998-05-19 1999-11-26 Jsr Corp Production of block copolymer
CN100588426C (en) * 2007-01-11 2010-02-10 中国科学院过程工程研究所 Temperature sensing parents block polymer/iron oxide magnetic nano-carrier and its production and use
EP2597113A1 (en) * 2007-12-27 2013-05-29 Bausch & Lomb Incorporated Coating solutions comprising segmented reactive block copolymers
US8304493B2 (en) * 2010-08-20 2012-11-06 Micron Technology, Inc. Methods of forming block copolymers
FR3010414B1 (en) * 2013-09-09 2015-09-25 Arkema France PROCESS FOR OBTAINING NANO-STRUCTURED THICK FILMS OBTAINED FROM A BLOCK COPOLYMER COMPOSITION
FR3010412B1 (en) * 2013-09-09 2016-10-21 Arkema France PROCESS FOR OBTAINING NANO-STRUCTURE THICK FILMS OBTAINED FROM BLOCK COPOLYMERS
FR3014888B1 (en) * 2013-12-13 2017-05-26 Arkema France PROCESS FOR CREATING NANOMETRIC STRUCTURES BY SELF-ASSEMBLING BLOCK COPOLYMERS
FR3014887B1 (en) * 2013-12-13 2017-05-26 Arkema France PROCESS FOR CREATING NANOMETRIC STRUCTURES BY SELF-ASSEMBLING BLOCK COPOLYMERS
JP2015129261A (en) * 2013-12-31 2015-07-16 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Method of annealing block copolymer, article produced from block copolymer

Also Published As

Publication number Publication date
US20200231731A1 (en) 2020-07-23
FR3042794B1 (en) 2020-03-27
KR20180072730A (en) 2018-06-29
FR3042794A1 (en) 2017-04-28
TW201726768A (en) 2017-08-01
TWI655229B (en) 2019-04-01
JP6777736B2 (en) 2020-10-28
JP2018534132A (en) 2018-11-22
CN108473812A (en) 2018-08-31
KR102191958B1 (en) 2020-12-16
EP3365400A1 (en) 2018-08-29
WO2017068259A1 (en) 2017-04-27

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