SG11201604641PA - Method and apparatus for design of a metrology target - Google Patents
Method and apparatus for design of a metrology targetInfo
- Publication number
- SG11201604641PA SG11201604641PA SG11201604641PA SG11201604641PA SG11201604641PA SG 11201604641P A SG11201604641P A SG 11201604641PA SG 11201604641P A SG11201604641P A SG 11201604641PA SG 11201604641P A SG11201604641P A SG 11201604641PA SG 11201604641P A SG11201604641P A SG 11201604641PA
- Authority
- SG
- Singapore
- Prior art keywords
- design
- metrology target
- metrology
- target
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361921939P | 2013-12-30 | 2013-12-30 | |
PCT/EP2014/076544 WO2015101460A1 (en) | 2013-12-30 | 2014-12-04 | Method and apparatus for design of a metrology target |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201604641PA true SG11201604641PA (en) | 2016-07-28 |
Family
ID=52003804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201604641PA SG11201604641PA (en) | 2013-12-30 | 2014-12-04 | Method and apparatus for design of a metrology target |
Country Status (7)
Country | Link |
---|---|
US (2) | US11221560B2 (ja) |
JP (1) | JP6567523B2 (ja) |
KR (2) | KR102246286B1 (ja) |
CN (1) | CN105874387B (ja) |
SG (1) | SG11201604641PA (ja) |
TW (1) | TWI561938B (ja) |
WO (1) | WO2015101460A1 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102265868B1 (ko) * | 2013-12-11 | 2021-06-16 | 케이엘에이 코포레이션 | 요건에 대한 타겟 및 프로세스 감도 분석 |
KR102246286B1 (ko) * | 2013-12-30 | 2021-04-30 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 타겟의 디자인을 위한 방법 및 장치 |
US9224098B2 (en) * | 2014-01-10 | 2015-12-29 | Optibrium Ltd. | Sensitivity analysis tool for multi-parameter selection |
KR101991418B1 (ko) | 2014-06-10 | 2019-06-20 | 에이에스엠엘 네델란즈 비.브이. | 컴퓨터를 이용한 웨이퍼 검사 |
WO2016045901A1 (en) | 2014-09-22 | 2016-03-31 | Asml Netherlands B.V. | Process window identifier |
WO2016078861A1 (en) | 2014-11-17 | 2016-05-26 | Asml Netherlands B.V. | Process based metrology target design |
WO2016096524A1 (en) * | 2014-12-19 | 2016-06-23 | Asml Netherlands B.V. | Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method |
US9490154B2 (en) * | 2015-01-15 | 2016-11-08 | Applied Materials, Inc. | Method of aligning substrate-scale mask with substrate |
US9824176B2 (en) * | 2015-07-24 | 2017-11-21 | Nanometrics Incorporated | Optical critical dimension target design |
NL2017300A (en) | 2015-08-27 | 2017-03-01 | Asml Netherlands Bv | Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method |
WO2017102336A1 (en) * | 2015-12-18 | 2017-06-22 | Asml Netherlands B.V. | Improvements in gauge pattern selection |
CN108431695B (zh) | 2015-12-24 | 2020-07-21 | Asml荷兰有限公司 | 控制图案形成过程的方法、器件制造方法、用于光刻设备的控制系统以及光刻设备 |
US20170256465A1 (en) * | 2016-03-01 | 2017-09-07 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter |
CN109478023B (zh) * | 2016-07-15 | 2021-09-10 | Asml荷兰有限公司 | 用于量测目标场的设计的方法和设备 |
EP3293574A1 (en) | 2016-09-09 | 2018-03-14 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
JP6855565B2 (ja) | 2016-09-27 | 2021-04-07 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジレシピ選択 |
JP7057358B2 (ja) * | 2016-12-02 | 2022-04-19 | エーエスエムエル ネザーランズ ビー.ブイ. | エッチングパラメータを変更する方法及びコンピュータプログラム |
EP3333633A1 (en) * | 2016-12-09 | 2018-06-13 | ASML Netherlands B.V. | Methods and apparatus for predicting performance of a measurement method, measurement method and apparatus |
WO2018202414A1 (en) * | 2017-05-04 | 2018-11-08 | Asml Holding N.V. | Method, substrate and apparatus to measure performance of optical metrology |
US10409939B1 (en) * | 2017-08-30 | 2019-09-10 | Cadence Design Systems, Inc. | Statistical sensitivity analyzer |
EP3457212A1 (en) * | 2017-09-18 | 2019-03-20 | ASML Netherlands B.V. | Method of controlling a patterning process, device manufacturing method |
EP3743771A1 (en) | 2018-01-24 | 2020-12-02 | ASML Netherlands B.V. | Computational metrology based sampling scheme |
US11333982B2 (en) * | 2019-01-28 | 2022-05-17 | Kla Corporation | Scaling metric for quantifying metrology sensitivity to process variation |
KR102708128B1 (ko) * | 2019-02-26 | 2024-09-19 | 에이에스엠엘 네델란즈 비.브이. | 검사 장치, 리소그래피 장치, 측정 방법 |
US20220236647A1 (en) * | 2019-08-20 | 2022-07-28 | Asml Netherlands B.V. | Method for controlling a semiconductor manufacturing process |
WO2021073854A1 (en) * | 2019-10-14 | 2021-04-22 | Asml Holding N.V. | Metrology mark structure and method of determining metrology mark structure |
US11487929B2 (en) * | 2020-04-28 | 2022-11-01 | Kla Corporation | Target design process for overlay targets intended for multi-signal measurements |
US20230194435A1 (en) * | 2020-05-26 | 2023-06-22 | Saint-Gobain Glass France | Method for estimating a quality function of a mono- or multi-layered coated transparent substrate |
CN113656995B (zh) * | 2021-07-06 | 2024-03-26 | 兰州空间技术物理研究所 | 一种基于电子轨迹积分法的电离规灵敏度数值计算方法 |
CN117897661A (zh) * | 2021-08-18 | 2024-04-16 | Asml荷兰有限公司 | 量测目标优化 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4576231A (en) * | 1984-09-13 | 1986-03-18 | Texaco Inc. | Method and apparatus for combating encroachment by in situ treated formations |
KR20020006690A (ko) * | 1999-03-24 | 2002-01-24 | 시마무라 테루오 | 위치계측장치, 위치계측방법 및 노광장치, 노광방법그리고 중첩계측장치, 중첩계측방법 |
EP2275802A1 (de) * | 2000-08-09 | 2011-01-19 | Artificial Sensing Instruments ASI AG | Wellenleitergitterstruktur und optische Messanordnung |
DE10143723B4 (de) | 2001-08-31 | 2006-09-28 | Infineon Technologies Ag | Verfahren zur Optimierung eines Layouts für eine Maske zur Verwendung bei der Halbleiterherstellung |
JP4352458B2 (ja) | 2002-03-01 | 2009-10-28 | 株式会社ニコン | 投影光学系の調整方法、予測方法、評価方法、調整方法、露光方法及び露光装置、露光装置の製造方法、プログラム並びにデバイス製造方法 |
US6721691B2 (en) | 2002-03-26 | 2004-04-13 | Timbre Technologies, Inc. | Metrology hardware specification using a hardware simulator |
JP4302965B2 (ja) * | 2002-11-01 | 2009-07-29 | 株式会社日立ハイテクノロジーズ | 半導体デバイスの製造方法及びその製造システム |
US6943882B2 (en) * | 2002-12-19 | 2005-09-13 | Nikon Precision, Inc. | Method to diagnose imperfections in illuminator of a lithographic tool |
US6869739B1 (en) * | 2003-01-28 | 2005-03-22 | International Business Machines Corporation | Integrated lithographic print and detection model for optical CD |
EP1496397A1 (en) * | 2003-07-11 | 2005-01-12 | ASML Netherlands B.V. | Method and system for feedforward overlay correction of pattern induced distortion and displacement, and lithographic projection apparatus using such a method and system |
US7791727B2 (en) * | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
DE102005009071B4 (de) | 2005-02-28 | 2008-06-26 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Prozesssteuerung |
US7376169B2 (en) * | 2005-03-07 | 2008-05-20 | Joseph Reid Henrichs | Optical phase conjugation laser diode |
US7704605B2 (en) | 2006-03-28 | 2010-04-27 | Eastman Chemical Company | Thermoplastic articles comprising cyclobutanediol having a decorative material embedded therein |
KR100982135B1 (ko) | 2005-09-09 | 2010-09-14 | 에이에스엠엘 네델란즈 비.브이. | 개별 마스크 오차 모델을 사용하는 마스크 검증 방법 및시스템 |
US7925486B2 (en) | 2006-03-14 | 2011-04-12 | Kla-Tencor Technologies Corp. | Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout |
US8045786B2 (en) | 2006-10-24 | 2011-10-25 | Kla-Tencor Technologies Corp. | Waferless recipe optimization |
US7873504B1 (en) * | 2007-05-07 | 2011-01-18 | Kla-Tencor Technologies Corp. | Computer-implemented methods, carrier media, and systems for creating a metrology target structure design for a reticle layout |
NL1036750A1 (nl) | 2008-04-14 | 2009-10-15 | Brion Tech Inc | A Method Of Performing Mask-Writer Tuning and Optimization. |
US8126669B2 (en) * | 2008-06-09 | 2012-02-28 | Carl Zeiss Smt Gmbh | Optimization and matching of optical systems by use of orientation Zernike polynomials |
NL2003654A (en) * | 2008-11-06 | 2010-05-10 | Brion Tech Inc | Methods and system for lithography calibration. |
NL2003702A (en) | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Pattern selection for lithographic model calibration. |
TWI417942B (zh) | 2009-12-17 | 2013-12-01 | Ind Tech Res Inst | 二維陣列疊對圖樣組之設計方法、疊對誤差量測方法及其量測系統 |
JP5661194B2 (ja) * | 2010-11-12 | 2015-01-28 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジ方法及び装置、リソグラフィシステム並びにデバイス製造方法 |
NL2008957A (en) | 2011-07-08 | 2013-01-09 | Asml Netherlands Bv | Methods and systems for pattern design with tailored response to wavefront aberration. |
NL2009294A (en) * | 2011-08-30 | 2013-03-04 | Asml Netherlands Bv | Method and apparatus for determining an overlay error. |
US8468471B2 (en) | 2011-09-23 | 2013-06-18 | Kla-Tencor Corp. | Process aware metrology |
US10354929B2 (en) | 2012-05-08 | 2019-07-16 | Kla-Tencor Corporation | Measurement recipe optimization based on spectral sensitivity and process variation |
NL2010717A (en) | 2012-05-21 | 2013-11-25 | Asml Netherlands Bv | Determining a structural parameter and correcting an asymmetry property. |
WO2014138057A1 (en) | 2013-03-04 | 2014-09-12 | Kla-Tencor Corporation | Metrology target identification, design and verification |
US9490182B2 (en) * | 2013-12-23 | 2016-11-08 | Kla-Tencor Corporation | Measurement of multiple patterning parameters |
KR102246286B1 (ko) * | 2013-12-30 | 2021-04-30 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 타겟의 디자인을 위한 방법 및 장치 |
WO2015101458A1 (en) * | 2013-12-30 | 2015-07-09 | Asml Netherlands B.V. | Method and apparatus for design of a metrology target |
WO2015124391A1 (en) * | 2014-02-21 | 2015-08-27 | Asml Netherlands B.V. | Measuring a process parameter for a manufacturing process involving lithography |
WO2016123552A1 (en) * | 2015-01-30 | 2016-08-04 | Kla-Tencor Corporation | Device metrology targets and methods |
KR20170124578A (ko) * | 2015-04-10 | 2017-11-10 | 에이에스엠엘 네델란즈 비.브이. | 검사와 계측을 위한 방법 및 장치 |
CN109478023B (zh) * | 2016-07-15 | 2021-09-10 | Asml荷兰有限公司 | 用于量测目标场的设计的方法和设备 |
WO2019035854A1 (en) * | 2017-08-16 | 2019-02-21 | Kla-Tencor Corporation | MACHINE LEARNING IN RELATION TO METROLOGY MEASUREMENTS |
-
2014
- 2014-12-04 KR KR1020167021003A patent/KR102246286B1/ko active IP Right Grant
- 2014-12-04 SG SG11201604641PA patent/SG11201604641PA/en unknown
- 2014-12-04 CN CN201480071608.1A patent/CN105874387B/zh active Active
- 2014-12-04 WO PCT/EP2014/076544 patent/WO2015101460A1/en active Application Filing
- 2014-12-04 KR KR1020197014239A patent/KR20190057429A/ko not_active Application Discontinuation
- 2014-12-04 JP JP2016537554A patent/JP6567523B2/ja active Active
- 2014-12-15 TW TW103143718A patent/TWI561938B/zh active
- 2014-12-19 US US14/577,966 patent/US11221560B2/en active Active
-
2021
- 2021-12-22 US US17/559,710 patent/US20220113638A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP6567523B2 (ja) | 2019-08-28 |
US11221560B2 (en) | 2022-01-11 |
TWI561938B (en) | 2016-12-11 |
US20220113638A1 (en) | 2022-04-14 |
CN105874387B (zh) | 2018-10-16 |
CN105874387A (zh) | 2016-08-17 |
WO2015101460A1 (en) | 2015-07-09 |
KR20160103131A (ko) | 2016-08-31 |
KR20190057429A (ko) | 2019-05-28 |
TW201531810A (zh) | 2015-08-16 |
US20150185625A1 (en) | 2015-07-02 |
JP2017502332A (ja) | 2017-01-19 |
KR102246286B1 (ko) | 2021-04-30 |
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