SG11201604593UA - Solar cell emitter region fabrication with differentiated p-type and n-type region architectures - Google Patents

Solar cell emitter region fabrication with differentiated p-type and n-type region architectures

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Publication number
SG11201604593UA
SG11201604593UA SG11201604593UA SG11201604593UA SG11201604593UA SG 11201604593U A SG11201604593U A SG 11201604593UA SG 11201604593U A SG11201604593U A SG 11201604593UA SG 11201604593U A SG11201604593U A SG 11201604593UA SG 11201604593U A SG11201604593U A SG 11201604593UA
Authority
SG
Singapore
Prior art keywords
type
region
differentiated
solar cell
architectures
Prior art date
Application number
SG11201604593UA
Other languages
English (en)
Inventor
Seung Bum Rim
David D Smith
Taiqing Qiu
Staffan Westerberg
Kieran Mark Tracy
Venkatasubramani Balu
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of SG11201604593UA publication Critical patent/SG11201604593UA/en

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    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
SG11201604593UA 2013-12-20 2014-12-12 Solar cell emitter region fabrication with differentiated p-type and n-type region architectures SG11201604593UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/136,751 US9196758B2 (en) 2013-12-20 2013-12-20 Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
PCT/US2014/070163 WO2015094987A1 (en) 2013-12-20 2014-12-12 Solar cell emitter region fabrication with differentiated p-type and n-type region architectures

Publications (1)

Publication Number Publication Date
SG11201604593UA true SG11201604593UA (en) 2016-07-28

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US (4) US9196758B2 (enrdf_load_stackoverflow)
EP (1) EP3084840B1 (enrdf_load_stackoverflow)
JP (2) JP6476202B2 (enrdf_load_stackoverflow)
KR (1) KR102397342B1 (enrdf_load_stackoverflow)
CN (2) CN108711579A (enrdf_load_stackoverflow)
AU (2) AU2014366256B2 (enrdf_load_stackoverflow)
BR (1) BR112016014406B1 (enrdf_load_stackoverflow)
CL (1) CL2016001559A1 (enrdf_load_stackoverflow)
MX (1) MX359591B (enrdf_load_stackoverflow)
MY (1) MY206809A (enrdf_load_stackoverflow)
PH (1) PH12016501141B1 (enrdf_load_stackoverflow)
SA (1) SA516371368B1 (enrdf_load_stackoverflow)
SG (1) SG11201604593UA (enrdf_load_stackoverflow)
TW (1) TWI643354B (enrdf_load_stackoverflow)
WO (1) WO2015094987A1 (enrdf_load_stackoverflow)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
US9196758B2 (en) * 2013-12-20 2015-11-24 Sunpower Corporation Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
KR101569417B1 (ko) * 2014-07-07 2015-11-16 엘지전자 주식회사 태양 전지
US9837576B2 (en) 2014-09-19 2017-12-05 Sunpower Corporation Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion
JP6272204B2 (ja) * 2014-10-02 2018-01-31 株式会社Ｓｏｋｅｎ 道路区画線情報取得装置
US9559245B2 (en) 2015-03-23 2017-01-31 Sunpower Corporation Blister-free polycrystalline silicon for solar cells
US9525083B2 (en) 2015-03-27 2016-12-20 Sunpower Corporation Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer
US9502601B1 (en) * 2016-04-01 2016-11-22 Sunpower Corporation Metallization of solar cells with differentiated P-type and N-type region architectures
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10629758B2 (en) * 2016-09-30 2020-04-21 Sunpower Corporation Solar cells with differentiated P-type and N-type region architectures
US10141462B2 (en) 2016-12-19 2018-11-27 Sunpower Corporation Solar cells having differentiated P-type and N-type architectures
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
US11804558B2 (en) * 2017-12-29 2023-10-31 Maxeon Solar Pte. Ltd. Conductive contacts for polycrystalline silicon features of solar cells
US20190207040A1 (en) * 2017-12-29 2019-07-04 Sunpower Corporation Chemical polishing of solar cell surfaces and the resulting structures
WO2019163647A1 (ja) * 2018-02-23 2019-08-29 株式会社カネカ 太陽電池の製造方法
CN110634971A (zh) * 2018-05-31 2019-12-31 福建金石能源有限公司 一种背接触异质结太阳能电池及其制造方法
US11682744B2 (en) 2018-09-28 2023-06-20 Maxeon Solar Pte. Ltd. Solar cells having hybrid architectures including differentiated P-type and N-type regions
CN110061086A (zh) * 2019-04-04 2019-07-26 国家电投集团西安太阳能电力有限公司 一种hbc太阳能电池
US11824126B2 (en) 2019-12-10 2023-11-21 Maxeon Solar Pte. Ltd. Aligned metallization for solar cells
CN111430508A (zh) * 2020-03-17 2020-07-17 常州捷佳创精密机械有限公司 半导体器件金属化方法和太阳能电池制备方法
EP3982421A1 (en) 2020-10-09 2022-04-13 International Solar Energy Research Center Konstanz E.V. Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivating contact solar cells and thus-created solar cell
EP4068392A1 (en) 2021-03-31 2022-10-05 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Photovoltaic device with passivated contact and corresponding method of manufacture
CN115548155B (zh) * 2021-06-30 2025-08-08 晶科能源股份有限公司 太阳能电池及光伏组件
CN113394304B (zh) * 2021-07-22 2025-10-17 浙江爱旭太阳能科技有限公司 一种太阳能电池及其背面接触结构、电池组件及光伏系统
US12211950B2 (en) 2021-07-22 2025-01-28 Solarlab Aiko Europe Gmbh Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system
CN216488083U (zh) * 2021-09-30 2022-05-10 泰州隆基乐叶光伏科技有限公司 一种背接触电池
EP4195299A1 (en) 2021-12-13 2023-06-14 International Solar Energy Research Center Konstanz E.V. Interdigitated back contact solar cell and method for producing an interdigitated back contact solar cell
CN115566088B (zh) * 2022-08-22 2025-08-12 泰州隆基乐叶光伏科技有限公司 一种背接触电池及其制造方法、光伏组件
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CN115621333B (zh) * 2022-11-22 2023-03-10 金阳(泉州)新能源科技有限公司 双面隧穿氧化硅钝化的背接触太阳能电池及其制备方法
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CN117594674B (zh) * 2024-01-19 2024-05-07 金阳(泉州)新能源科技有限公司 一种背接触电池及其制备方法和电池组件
CN118507573A (zh) * 2024-01-29 2024-08-16 天合光能股份有限公司 太阳电池及其制备方法、光伏组件、光伏系统
CN118335845A (zh) * 2024-04-26 2024-07-12 天合光能股份有限公司 全背接触电池制造方法、全背接触电池及光伏组件
CN118213428B (zh) * 2024-05-21 2025-02-11 隆基绿能科技股份有限公司 一种背接触电池及其制造方法、光伏组件

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3174486B2 (ja) * 1995-09-08 2001-06-11 シャープ株式会社 太陽電池およびその製造方法
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US7199395B2 (en) * 2003-09-24 2007-04-03 Sanyo Electric Co., Ltd. Photovoltaic cell and method of fabricating the same
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US20090314341A1 (en) * 2008-04-09 2009-12-24 Borden Peter G Simplified back contact for polysilicon emitter solar cells
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
JP2012501551A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド バックコンタクト式太陽電池モジュール
JP2012501550A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド 印刷誘電体障壁を使用するバックコンタクト太陽電池
CN101728454A (zh) * 2008-10-29 2010-06-09 昱晶能源科技股份有限公司 面板结构、面板电极的制作方法、形成金属硅化物的方法
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
EP2200082A1 (en) 2008-12-19 2010-06-23 STMicroelectronics Srl Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication process
US20120211063A1 (en) 2009-03-17 2012-08-23 Jong-Jan Lee Back Contact Solar Cell with Organic Semiconductor Heterojunctions
SG186005A1 (en) * 2009-03-20 2012-12-28 Intevac Inc Advanced high efficiency crystalline solar cell fabrication method
US8779280B2 (en) 2009-08-18 2014-07-15 Lg Electronics Inc. Solar cell and method of manufacturing the same
US8525018B2 (en) * 2009-09-07 2013-09-03 Lg Electronics Inc. Solar cell
JP2011061020A (ja) * 2009-09-10 2011-03-24 Sharp Corp 裏面コンタクト型太陽電池素子およびその製造方法
CN102725858B (zh) * 2010-01-26 2015-12-09 三洋电机株式会社 太阳能电池及其制造方法
TW201143113A (en) 2010-02-26 2011-12-01 Sanyo Electric Co Solar cell and method for manufacturing solar cell
US8962424B2 (en) * 2011-03-03 2015-02-24 Palo Alto Research Center Incorporated N-type silicon solar cell with contact/protection structures
JP5891382B2 (ja) 2011-03-25 2016-03-23 パナソニックＩｐマネジメント株式会社 光電変換素子の製造方法
JP5879538B2 (ja) 2011-03-25 2016-03-08 パナソニックＩｐマネジメント株式会社 光電変換装置及びその製造方法
JPWO2012132758A1 (ja) * 2011-03-28 2014-07-28 三洋電機株式会社 光電変換装置及び光電変換装置の製造方法
US8802486B2 (en) 2011-04-25 2014-08-12 Sunpower Corporation Method of forming emitters for a back-contact solar cell
GB2491209B (en) * 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
US20140318611A1 (en) * 2011-08-09 2014-10-30 Solexel, Inc. Multi-level solar cell metallization
US8597970B2 (en) * 2011-12-21 2013-12-03 Sunpower Corporation Hybrid polysilicon heterojunction back contact cell
CN106252457B (zh) * 2011-12-21 2018-10-12 太阳能公司 混合型多晶硅异质结背接触电池
KR101894585B1 (ko) * 2012-02-13 2018-09-04 엘지전자 주식회사 태양전지
WO2013133006A1 (ja) * 2012-03-08 2013-09-12 三洋電機株式会社 太陽電池の製造方法
CN103050553B (zh) * 2012-12-29 2015-06-24 中国科学院沈阳科学仪器股份有限公司 一种双面钝化晶硅太阳能电池及其制备方法
US9214585B2 (en) * 2013-04-29 2015-12-15 Solexel, Inc. Annealing for damage free laser processing for high efficiency solar cells
KR101622090B1 (ko) * 2013-11-08 2016-05-18 엘지전자 주식회사 태양 전지
US9196758B2 (en) 2013-12-20 2015-11-24 Sunpower Corporation Solar cell emitter region fabrication with differentiated p-type and n-type region architectures

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