SG11201604407WA - Asymmetric template shape modulation for partial field imprinting - Google Patents
Asymmetric template shape modulation for partial field imprintingInfo
- Publication number
- SG11201604407WA SG11201604407WA SG11201604407WA SG11201604407WA SG11201604407WA SG 11201604407W A SG11201604407W A SG 11201604407WA SG 11201604407W A SG11201604407W A SG 11201604407WA SG 11201604407W A SG11201604407W A SG 11201604407WA SG 11201604407W A SG11201604407W A SG 11201604407WA
- Authority
- SG
- Singapore
- Prior art keywords
- partial field
- template shape
- shape modulation
- asymmetric template
- field imprinting
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70766—Reaction force control means, e.g. countermass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361922431P | 2013-12-31 | 2013-12-31 | |
PCT/US2014/072955 WO2015103370A1 (en) | 2013-12-31 | 2014-12-31 | Asymmetric template shape modulation for partial field imprinting |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201604407WA true SG11201604407WA (en) | 2016-07-28 |
Family
ID=53480768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201604407WA SG11201604407WA (en) | 2013-12-31 | 2014-12-31 | Asymmetric template shape modulation for partial field imprinting |
Country Status (7)
Country | Link |
---|---|
US (1) | US10578964B2 (zh) |
JP (1) | JP6538695B2 (zh) |
KR (1) | KR102305247B1 (zh) |
CN (1) | CN106030756B (zh) |
SG (1) | SG11201604407WA (zh) |
TW (1) | TWI690482B (zh) |
WO (1) | WO2015103370A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102545684B1 (ko) | 2014-04-22 | 2023-06-20 | 에베 그룹 에. 탈너 게엠베하 | 나노구조를 엠보싱하기 위한 방법 및 장치 |
JP2016157784A (ja) * | 2015-02-24 | 2016-09-01 | 株式会社東芝 | パターン形成方法およびパターン形成装置 |
JP2017059717A (ja) * | 2015-09-17 | 2017-03-23 | 株式会社東芝 | テンプレート、インプリント装置および制御方法 |
US11104057B2 (en) * | 2015-12-11 | 2021-08-31 | Canon Kabushiki Kaisha | Imprint apparatus and method of imprinting a partial field |
JP6942491B2 (ja) * | 2016-03-15 | 2021-09-29 | キヤノン株式会社 | インプリント装置、および物品の製造方法 |
US10627715B2 (en) | 2016-10-31 | 2020-04-21 | Canon Kabushiki Kaisha | Method for separating a nanoimprint template from a substrate |
US10549313B2 (en) * | 2016-10-31 | 2020-02-04 | Canon Kabushiki Kaisha | Edge field imprint lithography |
US11454883B2 (en) | 2016-11-14 | 2022-09-27 | Canon Kabushiki Kaisha | Template replication |
JP7086711B2 (ja) * | 2018-05-18 | 2022-06-20 | キヤノン株式会社 | インプリント装置、および物品製造方法 |
US11204549B2 (en) * | 2018-10-26 | 2021-12-21 | Canon Kabushiki Kaisha | Superstrate with an offset mesa and methods of using the same |
JP7171394B2 (ja) * | 2018-11-29 | 2022-11-15 | キヤノン株式会社 | 成形装置、成形方法、および物品の製造方法 |
US11614693B2 (en) | 2021-06-30 | 2023-03-28 | Canon Kabushiki Kaisha | Method of determining the initial contact point for partial fields and method of shaping a surface |
Family Cites Families (35)
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US5151277A (en) * | 1991-03-27 | 1992-09-29 | The Charles Stark Draper Lab., Inc. | Reconfigurable fiber-forming resin transfer system |
US5464337A (en) * | 1991-03-27 | 1995-11-07 | The Charles Stark Draper Laboratories | Resin transfer molding system |
US5464711A (en) * | 1994-08-01 | 1995-11-07 | Motorola Inc. | Process for fabricating an X-ray absorbing mask |
US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US20060005657A1 (en) * | 2004-06-01 | 2006-01-12 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
US20080160129A1 (en) * | 2006-05-11 | 2008-07-03 | Molecular Imprints, Inc. | Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template |
US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6936194B2 (en) | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US20040065252A1 (en) | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
US7037458B2 (en) * | 2003-10-23 | 2006-05-02 | Intel Corporation | Progressive stamping apparatus and method |
US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
CN101426957A (zh) * | 2004-05-28 | 2009-05-06 | 得克萨斯州大学系统董事会 | 基片支承系统和方法 |
US7635263B2 (en) | 2005-01-31 | 2009-12-22 | Molecular Imprints, Inc. | Chucking system comprising an array of fluid chambers |
US7802978B2 (en) | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
US20070231422A1 (en) * | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | System to vary dimensions of a thin template |
US8048473B2 (en) | 2006-07-04 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
US7997891B2 (en) * | 2007-04-12 | 2011-08-16 | Purdue Research Foundation | Molding processes and tool therefor |
US7999912B2 (en) * | 2007-05-08 | 2011-08-16 | Asml Netherlands B.V. | Lithographic apparatus and sensor calibration method |
JP5112022B2 (ja) | 2007-11-26 | 2013-01-09 | 株式会社東芝 | 電気掃除機 |
US8913230B2 (en) * | 2009-07-02 | 2014-12-16 | Canon Nanotechnologies, Inc. | Chucking system with recessed support feature |
JP2012099789A (ja) * | 2010-10-08 | 2012-05-24 | Canon Inc | インプリント装置、及び、物品の製造方法 |
JP2012134214A (ja) | 2010-12-20 | 2012-07-12 | Canon Inc | インプリント装置、および、物品の製造方法 |
JP6061524B2 (ja) * | 2011-08-11 | 2017-01-18 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
JP5759303B2 (ja) | 2011-08-11 | 2015-08-05 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
JP6004738B2 (ja) | 2011-09-07 | 2016-10-12 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
JP2013098497A (ja) * | 2011-11-04 | 2013-05-20 | Canon Inc | インプリント装置及び物品の製造方法 |
JP5930699B2 (ja) | 2011-12-20 | 2016-06-08 | キヤノン株式会社 | インプリント装置、インプリント方法およびデバイスの製造方法 |
JP2013142158A (ja) * | 2012-01-06 | 2013-07-22 | Nippon Shokubai Co Ltd | 金属ナノ構造体及びその製造方法 |
JP5824380B2 (ja) * | 2012-02-07 | 2015-11-25 | キヤノン株式会社 | インプリント装置、インプリント方法、及び物品の製造方法 |
JP6304934B2 (ja) | 2012-05-08 | 2018-04-04 | キヤノン株式会社 | インプリント装置および物品の製造方法 |
-
2014
- 2014-12-31 KR KR1020167018482A patent/KR102305247B1/ko active IP Right Grant
- 2014-12-31 JP JP2016540024A patent/JP6538695B2/ja active Active
- 2014-12-31 US US14/587,370 patent/US10578964B2/en active Active
- 2014-12-31 SG SG11201604407WA patent/SG11201604407WA/en unknown
- 2014-12-31 WO PCT/US2014/072955 patent/WO2015103370A1/en active Application Filing
- 2014-12-31 CN CN201480071488.5A patent/CN106030756B/zh active Active
- 2014-12-31 TW TW103146559A patent/TWI690482B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN106030756B (zh) | 2021-01-22 |
JP6538695B2 (ja) | 2019-07-03 |
KR102305247B1 (ko) | 2021-09-27 |
CN106030756A (zh) | 2016-10-12 |
KR20160103020A (ko) | 2016-08-31 |
JP2017502510A (ja) | 2017-01-19 |
TW201536663A (zh) | 2015-10-01 |
TWI690482B (zh) | 2020-04-11 |
US10578964B2 (en) | 2020-03-03 |
US20150183151A1 (en) | 2015-07-02 |
WO2015103370A1 (en) | 2015-07-09 |
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