SG11201604407WA - Asymmetric template shape modulation for partial field imprinting - Google Patents

Asymmetric template shape modulation for partial field imprinting

Info

Publication number
SG11201604407WA
SG11201604407WA SG11201604407WA SG11201604407WA SG11201604407WA SG 11201604407W A SG11201604407W A SG 11201604407WA SG 11201604407W A SG11201604407W A SG 11201604407WA SG 11201604407W A SG11201604407W A SG 11201604407WA SG 11201604407W A SG11201604407W A SG 11201604407WA
Authority
SG
Singapore
Prior art keywords
partial field
template shape
shape modulation
asymmetric template
field imprinting
Prior art date
Application number
SG11201604407WA
Other languages
English (en)
Inventor
Mahadevan Ganapathisubramanian
Matthew M Kincaid
Byung-Jin Choi
Sidlgata V Sreenivasan
Original Assignee
Canon Nanotechnologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Nanotechnologies Inc filed Critical Canon Nanotechnologies Inc
Publication of SG11201604407WA publication Critical patent/SG11201604407WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70766—Reaction force control means, e.g. countermass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Engineering (AREA)
SG11201604407WA 2013-12-31 2014-12-31 Asymmetric template shape modulation for partial field imprinting SG11201604407WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361922431P 2013-12-31 2013-12-31
PCT/US2014/072955 WO2015103370A1 (en) 2013-12-31 2014-12-31 Asymmetric template shape modulation for partial field imprinting

Publications (1)

Publication Number Publication Date
SG11201604407WA true SG11201604407WA (en) 2016-07-28

Family

ID=53480768

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201604407WA SG11201604407WA (en) 2013-12-31 2014-12-31 Asymmetric template shape modulation for partial field imprinting

Country Status (7)

Country Link
US (1) US10578964B2 (ko)
JP (1) JP6538695B2 (ko)
KR (1) KR102305247B1 (ko)
CN (1) CN106030756B (ko)
SG (1) SG11201604407WA (ko)
TW (1) TWI690482B (ko)
WO (1) WO2015103370A1 (ko)

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CN106462053B (zh) * 2014-04-22 2020-12-01 Ev 集团 E·索尔纳有限责任公司 用于压印纳米结构的方法和装置
JP2016157784A (ja) * 2015-02-24 2016-09-01 株式会社東芝 パターン形成方法およびパターン形成装置
JP2017059717A (ja) * 2015-09-17 2017-03-23 株式会社東芝 テンプレート、インプリント装置および制御方法
US11104057B2 (en) * 2015-12-11 2021-08-31 Canon Kabushiki Kaisha Imprint apparatus and method of imprinting a partial field
JP6942491B2 (ja) * 2016-03-15 2021-09-29 キヤノン株式会社 インプリント装置、および物品の製造方法
US10549313B2 (en) * 2016-10-31 2020-02-04 Canon Kabushiki Kaisha Edge field imprint lithography
US10627715B2 (en) * 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US11454883B2 (en) 2016-11-14 2022-09-27 Canon Kabushiki Kaisha Template replication
JP7086711B2 (ja) * 2018-05-18 2022-06-20 キヤノン株式会社 インプリント装置、および物品製造方法
US11204549B2 (en) * 2018-10-26 2021-12-21 Canon Kabushiki Kaisha Superstrate with an offset mesa and methods of using the same
JP7171394B2 (ja) * 2018-11-29 2022-11-15 キヤノン株式会社 成形装置、成形方法、および物品の製造方法
US11614693B2 (en) 2021-06-30 2023-03-28 Canon Kabushiki Kaisha Method of determining the initial contact point for partial fields and method of shaping a surface

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US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
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JP2012099789A (ja) * 2010-10-08 2012-05-24 Canon Inc インプリント装置、及び、物品の製造方法
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JP5759303B2 (ja) 2011-08-11 2015-08-05 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
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JP6304934B2 (ja) 2012-05-08 2018-04-04 キヤノン株式会社 インプリント装置および物品の製造方法

Also Published As

Publication number Publication date
JP6538695B2 (ja) 2019-07-03
US20150183151A1 (en) 2015-07-02
WO2015103370A1 (en) 2015-07-09
KR20160103020A (ko) 2016-08-31
TW201536663A (zh) 2015-10-01
TWI690482B (zh) 2020-04-11
CN106030756B (zh) 2021-01-22
US10578964B2 (en) 2020-03-03
CN106030756A (zh) 2016-10-12
JP2017502510A (ja) 2017-01-19
KR102305247B1 (ko) 2021-09-27

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