SG11201601920TA - Lead-free solder, lead-free solder ball, solder joint obtained using said lead-free solder, and semiconductor circuit including said solder joint - Google Patents

Lead-free solder, lead-free solder ball, solder joint obtained using said lead-free solder, and semiconductor circuit including said solder joint

Info

Publication number
SG11201601920TA
SG11201601920TA SG11201601920TA SG11201601920TA SG11201601920TA SG 11201601920T A SG11201601920T A SG 11201601920TA SG 11201601920T A SG11201601920T A SG 11201601920TA SG 11201601920T A SG11201601920T A SG 11201601920TA SG 11201601920T A SG11201601920T A SG 11201601920TA
Authority
SG
Singapore
Prior art keywords
lead
solder
free solder
free
circuit including
Prior art date
Application number
SG11201601920TA
Other languages
English (en)
Inventor
Ken Tachibana
Yuya NAGASAWA
Original Assignee
Senju Metal Industry Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Senju Metal Industry Co filed Critical Senju Metal Industry Co
Publication of SG11201601920TA publication Critical patent/SG11201601920TA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48229—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
SG11201601920TA 2013-09-11 2014-05-21 Lead-free solder, lead-free solder ball, solder joint obtained using said lead-free solder, and semiconductor circuit including said solder joint SG11201601920TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013188406 2013-09-11
PCT/JP2014/063481 WO2015037279A1 (ja) 2013-09-11 2014-05-21 鉛フリーはんだ、鉛フリーはんだボール、この鉛フリーはんだを使用したはんだ継手およびこのはんだ継手を有する半導体回路

Publications (1)

Publication Number Publication Date
SG11201601920TA true SG11201601920TA (en) 2016-04-28

Family

ID=52665403

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201601920TA SG11201601920TA (en) 2013-09-11 2014-05-21 Lead-free solder, lead-free solder ball, solder joint obtained using said lead-free solder, and semiconductor circuit including said solder joint

Country Status (9)

Country Link
US (1) US10434608B2 (zh)
EP (1) EP3040152B1 (zh)
JP (2) JP6145164B2 (zh)
KR (1) KR20160053838A (zh)
CN (1) CN105189027B (zh)
ES (1) ES2881222T3 (zh)
SG (1) SG11201601920TA (zh)
TW (1) TWI616264B (zh)
WO (1) WO2015037279A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6374424B2 (ja) 2016-03-08 2018-08-15 千住金属工業株式会社 はんだ合金、はんだボール、チップソルダ、はんだペースト及びはんだ継手
JP6969070B2 (ja) * 2017-02-28 2021-11-24 千住金属工業株式会社 はんだ材料、はんだペースト、フォームはんだ及びはんだ継手
JP2018140427A (ja) * 2017-02-28 2018-09-13 千住金属工業株式会社 はんだ材料、はんだペースト、フォームはんだ及びはんだ継手
WO2018174162A1 (ja) * 2017-03-23 2018-09-27 株式会社日本スペリア社 はんだ継手
US11577343B2 (en) * 2017-11-09 2023-02-14 Alpha Assembly Solutions Inc. Low-silver alternative to standard SAC alloys for high reliability applications
JP2018140436A (ja) * 2017-12-19 2018-09-13 千住金属工業株式会社 はんだ材料、はんだペースト、フォームはんだ及びはんだ継手
TWI714825B (zh) * 2018-02-07 2021-01-01 大瑞科技股份有限公司 焊料組成合金及錫球
JP6578393B2 (ja) * 2018-02-27 2019-09-18 株式会社タムラ製作所 鉛フリーはんだ合金、電子回路実装基板及び電子制御装置
JP6721851B1 (ja) * 2019-06-28 2020-07-15 千住金属工業株式会社 はんだ合金、鋳造物、形成物およびはんだ継手
KR102460042B1 (ko) * 2020-05-14 2022-10-28 엠케이전자 주식회사 무연 솔더 합금, 솔더볼, 솔더 페이스트, 및 반도체 부품
MX2023005700A (es) * 2020-11-19 2023-11-30 Senju Metal Industry Co Aleacion de soldadura, bola de soldadura y junta de soldadura.
JP6936926B1 (ja) * 2021-03-10 2021-09-22 千住金属工業株式会社 はんだ合金、はんだ粉末、はんだペースト、およびはんだ継手

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1087994C (zh) * 1995-09-29 2002-07-24 松下电器产业株式会社 无铅钎料合金
JP3693762B2 (ja) 1996-07-26 2005-09-07 株式会社ニホンゲンマ 無鉛はんだ
JP2000015476A (ja) 1998-06-29 2000-01-18 Ishikawa Kinzoku Kk 無鉛はんだ
US6365097B1 (en) 1999-01-29 2002-04-02 Fuji Electric Co., Ltd. Solder alloy
JP2000288772A (ja) * 1999-02-02 2000-10-17 Nippon Genma:Kk 無鉛はんだ
JP2002096191A (ja) 2000-09-18 2002-04-02 Matsushita Electric Ind Co Ltd はんだ材料およびこれを利用する電気・電子機器
JP3602529B1 (ja) 2003-01-22 2004-12-15 白光株式会社 マニュアルソルダリング用またはフローソルダリング用鉛フリーはんだ及びそれを用いた電子部品
CN1570166A (zh) * 2004-05-09 2005-01-26 邓和升 无铅焊料合金及其制备方法
WO2007081775A2 (en) * 2006-01-10 2007-07-19 Illinois Tool Works Inc. Lead-free solder with low copper dissolution
KR101265449B1 (ko) 2007-07-13 2013-05-16 센주긴조쿠고교 가부시키가이샤 차재 실장용 무납 땜납과 차재 전자 회로
KR101318454B1 (ko) * 2008-04-23 2013-10-16 센주긴조쿠고교 가부시키가이샤 수축공이 억제된 납프리 땜납 합금
CN102066042B (zh) 2008-04-23 2016-03-23 千住金属工业株式会社 无铅焊料
US8283781B2 (en) 2010-09-10 2012-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having pad structure with stress buffer layer
CN102172805B (zh) * 2011-01-18 2013-01-02 哈尔滨理工大学 一种电子封装用低成本抗老化钎料及其制备方法
TWI576195B (zh) * 2013-05-03 2017-04-01 Accurus Scientific Co Ltd High temperature resistant high strength lead free solder

Also Published As

Publication number Publication date
TWI616264B (zh) 2018-03-01
KR20160053838A (ko) 2016-05-13
WO2015037279A1 (ja) 2015-03-19
JP6145164B2 (ja) 2017-06-07
US10434608B2 (en) 2019-10-08
EP3040152A1 (en) 2016-07-06
JPWO2015037279A1 (ja) 2017-03-02
CN105189027A (zh) 2015-12-23
ES2881222T3 (es) 2021-11-29
TW201521935A (zh) 2015-06-16
US20160214212A1 (en) 2016-07-28
JP2016040051A (ja) 2016-03-24
EP3040152B1 (en) 2021-06-30
CN105189027B (zh) 2018-06-29
EP3040152A4 (en) 2017-05-17

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