SG11201600622WA - Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device - Google Patents
Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic deviceInfo
- Publication number
- SG11201600622WA SG11201600622WA SG11201600622WA SG11201600622WA SG11201600622WA SG 11201600622W A SG11201600622W A SG 11201600622WA SG 11201600622W A SG11201600622W A SG 11201600622WA SG 11201600622W A SG11201600622W A SG 11201600622WA SG 11201600622W A SG11201600622W A SG 11201600622WA
- Authority
- SG
- Singapore
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- electronic device
- production method
- method therefor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Polyesters Or Polycarbonates (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013166318 | 2013-08-09 | ||
JP2013262975 | 2013-12-19 | ||
PCT/JP2014/067960 WO2015019771A1 (ja) | 2013-08-09 | 2014-07-04 | 酸化物半導体層及びその製造方法、並びに酸化物半導体の前駆体、酸化物半導体層、半導体素子、及び電子デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201600622WA true SG11201600622WA (en) | 2016-02-26 |
Family
ID=52461110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201600622WA SG11201600622WA (en) | 2013-08-09 | 2014-07-04 | Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device |
Country Status (9)
Country | Link |
---|---|
US (2) | US9552985B2 (ja) |
EP (1) | EP3032576A4 (ja) |
JP (1) | JP5749411B1 (ja) |
KR (1) | KR102147816B1 (ja) |
CN (2) | CN108878267A (ja) |
CA (1) | CA2920490C (ja) |
SG (1) | SG11201600622WA (ja) |
TW (2) | TWI639240B (ja) |
WO (1) | WO2015019771A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5749411B1 (ja) * | 2013-08-09 | 2015-07-15 | 国立大学法人北陸先端科学技術大学院大学 | 酸化物半導体層及びその製造方法、並びに酸化物半導体の前駆体、酸化物半導体層、半導体素子、及び電子デバイス |
JP6469960B2 (ja) * | 2014-03-31 | 2019-02-13 | 住友精化株式会社 | ポジ型フォトレジスト |
US10400336B2 (en) | 2014-12-16 | 2019-09-03 | Japan Advanced Institute Of Science And Technology | Oxide precursor, oxide layer, semiconductor element, and electronic device, and method of producing oxide layer and method of producing semiconductor element |
JP6646036B2 (ja) * | 2015-03-02 | 2020-02-14 | 国立大学法人東京農工大学 | 熱分解性バインダー |
CN107406669B (zh) | 2015-03-30 | 2019-07-19 | 住友精化株式会社 | 粘接剂树脂组合物 |
CN107431013B (zh) | 2015-04-16 | 2022-01-25 | 国立大学法人北陆先端科学技术大学院大学 | 蚀刻掩模、蚀刻掩模前体、氧化物层的制造方法以及薄膜晶体管的制造方法 |
WO2017048687A1 (en) * | 2015-09-17 | 2017-03-23 | Gerhard Maale | Sensor device for biosensing and other applications |
CN107949903B (zh) * | 2015-09-18 | 2022-10-14 | 国立大学法人北陆先端科学技术大学院大学 | 复合部件及复合部件的制造方法及含有脂肪族聚碳酸酯的层 |
US10784120B2 (en) * | 2016-03-14 | 2020-09-22 | Japan Advanced Institute Of Science And Technology | Laminate, etching mask, method of producing laminate, method of producing etching mask, and method of producing thin film transistor |
EP3432349A4 (en) * | 2016-03-18 | 2019-03-20 | Ricoh Company, Ltd. | METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR |
JP6852296B2 (ja) * | 2016-07-19 | 2021-03-31 | 株式会社リコー | 電界効果型トランジスタの製造方法 |
KR20190094099A (ko) | 2018-02-02 | 2019-08-12 | 스미토모 세이카 가부시키가이샤 | 폴리프로필렌 카보네이트 함유층 및 그 제조방법, 및 폴리프로필렌 카보네이트 함유층을 구비하는 기재 |
KR20190094100A (ko) | 2018-02-02 | 2019-08-12 | 스미토모 세이카 가부시키가이샤 | 폴리프로필렌 카보네이트 함유 용액 및 폴리프로필렌 카보네이트 함유층 |
JP2019167520A (ja) | 2018-03-22 | 2019-10-03 | 住友精化株式会社 | ポリプロピレンカーボネート含有溶液及びポリプロピレンカーボネート含有層、並びに複合部材の製造方法 |
KR20190111743A (ko) | 2018-03-22 | 2019-10-02 | 스미토모 세이카 가부시키가이샤 | 복합부재 및 그 제조방법 |
CN108461389B (zh) * | 2018-03-29 | 2020-10-30 | 华南理工大学 | 一种提高半导体氧化物薄膜偏压热稳定性的方法 |
JP7238847B2 (ja) * | 2020-04-16 | 2023-03-14 | トヨタ自動車株式会社 | 半導体素子の製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007134547A (ja) | 2005-11-11 | 2007-05-31 | Toppan Printing Co Ltd | トランジスタおよびその製造方法 |
GB2433646A (en) | 2005-12-14 | 2007-06-27 | Seiko Epson Corp | Printing ferroelectric devices |
JP2007201056A (ja) | 2006-01-25 | 2007-08-09 | Toppan Printing Co Ltd | 薄膜トランジスタ及びその製造方法 |
US20080182011A1 (en) * | 2007-01-26 | 2008-07-31 | Ng Hou T | Metal and metal oxide circuit element ink formulation and method |
JP5319961B2 (ja) * | 2008-05-30 | 2013-10-16 | 富士フイルム株式会社 | 半導体素子の製造方法 |
JP2009290112A (ja) | 2008-05-30 | 2009-12-10 | Fujifilm Corp | 導電性無機膜とその製造方法、配線基板、半導体装置 |
CN102131953B (zh) * | 2008-06-27 | 2014-07-09 | 出光兴产株式会社 | 由InGaO3(ZnO)结晶相形成的氧化物半导体用溅射靶材及其制造方法 |
US20110220895A1 (en) * | 2008-11-27 | 2011-09-15 | Konica Minolta Holdings, Inc. | Thin film transistor and method of manufacturing thin film transistor |
JP5558702B2 (ja) * | 2008-12-05 | 2014-07-23 | ダイセル・エボニック株式会社 | 球状複合粒子およびその製造方法 |
JP2010147206A (ja) * | 2008-12-18 | 2010-07-01 | Konica Minolta Holdings Inc | 薄膜トランジスタ、及びその製造方法 |
EP2256814B1 (en) * | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
JP2013512311A (ja) * | 2009-11-25 | 2013-04-11 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板 |
TWI547468B (zh) * | 2010-07-26 | 2016-09-01 | Nissan Chemical Ind Ltd | An amorphous metal oxide semiconductor layer forming precursor composition, an amorphous metal oxide semiconductor layer, a method for manufacturing the same, and a semiconductor device |
JP5540972B2 (ja) * | 2010-07-30 | 2014-07-02 | 日立金属株式会社 | 酸化物半導体ターゲットおよび酸化物半導体膜の製造方法 |
WO2012090891A1 (ja) * | 2010-12-27 | 2012-07-05 | パナソニック株式会社 | 電界効果トランジスタおよびその製造方法 |
JP5916761B2 (ja) | 2011-01-28 | 2016-05-11 | ノースウェスタン ユニバーシティ | 金属酸化物薄膜およびナノ材料から誘導される金属複合薄膜の低温製造 |
IT1403767B1 (it) | 2011-02-03 | 2013-10-31 | Andreoli | Bocchettone di scarico per impianti di evacuazione di acque meteoriche da coperture impermeabilizzate. |
JP5871263B2 (ja) * | 2011-06-14 | 2016-03-01 | 富士フイルム株式会社 | 非晶質酸化物薄膜の製造方法 |
JP5496995B2 (ja) * | 2011-12-22 | 2014-05-21 | 独立行政法人科学技術振興機構 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
DE102012209918A1 (de) * | 2012-06-13 | 2013-12-19 | Evonik Industries Ag | Verfahren zur Herstellung Indiumoxid-haltiger Schichten |
CN102751101B (zh) * | 2012-07-11 | 2016-06-15 | 北京大学 | 一种铂/石墨烯纳米复合材料及其制备方法与应用 |
CN102867756A (zh) * | 2012-09-27 | 2013-01-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种金属氧化物薄膜场效应晶体管有源层的制备方法 |
JP5749411B1 (ja) * | 2013-08-09 | 2015-07-15 | 国立大学法人北陸先端科学技術大学院大学 | 酸化物半導体層及びその製造方法、並びに酸化物半導体の前駆体、酸化物半導体層、半導体素子、及び電子デバイス |
-
2014
- 2014-07-04 JP JP2014554108A patent/JP5749411B1/ja active Active
- 2014-07-04 SG SG11201600622WA patent/SG11201600622WA/en unknown
- 2014-07-04 US US14/910,631 patent/US9552985B2/en active Active
- 2014-07-04 CN CN201810733814.4A patent/CN108878267A/zh active Pending
- 2014-07-04 CA CA2920490A patent/CA2920490C/en active Active
- 2014-07-04 CN CN201480044072.4A patent/CN105474372B/zh not_active Expired - Fee Related
- 2014-07-04 WO PCT/JP2014/067960 patent/WO2015019771A1/ja active Application Filing
- 2014-07-04 EP EP14835273.5A patent/EP3032576A4/en not_active Withdrawn
- 2014-07-04 KR KR1020167005121A patent/KR102147816B1/ko active IP Right Grant
- 2014-07-11 TW TW106143519A patent/TWI639240B/zh active
- 2014-07-11 TW TW103123895A patent/TWI614902B/zh active
-
2016
- 2016-12-13 US US15/377,068 patent/US9842916B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JPWO2015019771A1 (ja) | 2017-03-02 |
KR20160041947A (ko) | 2016-04-18 |
TW201813109A (zh) | 2018-04-01 |
CN105474372B (zh) | 2018-08-03 |
US20170117393A1 (en) | 2017-04-27 |
KR102147816B1 (ko) | 2020-08-25 |
EP3032576A1 (en) | 2016-06-15 |
TWI639240B (zh) | 2018-10-21 |
US9552985B2 (en) | 2017-01-24 |
JP5749411B1 (ja) | 2015-07-15 |
TW201511291A (zh) | 2015-03-16 |
CA2920490C (en) | 2021-04-20 |
WO2015019771A1 (ja) | 2015-02-12 |
US9842916B2 (en) | 2017-12-12 |
CA2920490A1 (en) | 2015-02-12 |
TWI614902B (zh) | 2018-02-11 |
CN105474372A (zh) | 2016-04-06 |
EP3032576A4 (en) | 2017-03-15 |
US20160181098A1 (en) | 2016-06-23 |
CN108878267A (zh) | 2018-11-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201600622WA (en) | Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device | |
HK1214408A1 (zh) | 半導體裝置及其製造方法 | |
EP2942808A4 (en) | CERAMIC WIRING SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE CERAMIC WIRING SUBSTRATE | |
EP2960925A4 (en) | COMPOSITE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | |
EP2930741A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT | |
EP2985790A4 (en) | SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD | |
HK1202983A1 (en) | Semiconductor device and manufacturing method of the same | |
HK1205357A1 (en) | Semiconductor device and method for manufacturing the same | |
EP3082160A4 (en) | Semiconductor device and manufacturing method thereof | |
SG10201911825SA (en) | Insulating film, method for manufacturing semiconductor device, and semiconductor device | |
AU2014201138A1 (en) | Case, method of manufacturing case, and electronic device | |
SG10201406149PA (en) | Semiconductor Device And Method For Manufacturing The Same | |
EP2974842A4 (en) | LAMINATED SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME | |
HK1198562A1 (en) | Method of manufacturing semiconductor device, and semiconductor device | |
EP2966676A4 (en) | SILICON CARBIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR | |
HK1219347A1 (zh) | 半導體裝置及其製造方法 | |
HK1210869A1 (en) | Semiconductor device and method for manufacturing the same | |
EP2955748A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
SG11201508291QA (en) | Semiconductor device and method for manufacturing semiconductor device | |
EP3021353A4 (en) | Silicon-carbide semiconductor device and method for manufacturing silicon-carbide semiconductor device | |
EP2980176A4 (en) | PRODUCTION METHOD FOR LAMINATED FILM, LAMINATED FILM, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE USING THE SAME | |
EP2955762A4 (en) | LIGHT-EMITTING SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD | |
IL242211A0 (en) | A method for creating a template, a method for making an electronic device and an electronic device | |
SG11201510008UA (en) | Semiconductor device and manufacturing method therefor | |
EP2990861A4 (en) | DISPLAY SUBSTRATE, DISPLAY DEVICE COMPRISING SAME, AND METHOD FOR MANUFACTURING DISPLAY SUBSTRATE |