SG11201600093PA - Integrated circuit manufacture using direct write lithography - Google Patents
Integrated circuit manufacture using direct write lithographyInfo
- Publication number
- SG11201600093PA SG11201600093PA SG11201600093PA SG11201600093PA SG11201600093PA SG 11201600093P A SG11201600093P A SG 11201600093PA SG 11201600093P A SG11201600093P A SG 11201600093PA SG 11201600093P A SG11201600093P A SG 11201600093PA SG 11201600093P A SG11201600093P A SG 11201600093PA
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuit
- direct write
- circuit manufacture
- write lithography
- lithography
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/18—Manufacturability analysis or optimisation for manufacturability
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/944,129 US9672316B2 (en) | 2013-07-17 | 2013-07-17 | Integrated circuit manufacture using direct write lithography |
| PCT/GB2014/051398 WO2015008021A1 (en) | 2013-07-17 | 2014-05-08 | Integrated circuit manufacture using direct write lithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201600093PA true SG11201600093PA (en) | 2016-02-26 |
Family
ID=50736119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201600093PA SG11201600093PA (en) | 2013-07-17 | 2014-05-08 | Integrated circuit manufacture using direct write lithography |
Country Status (13)
| Country | Link |
|---|---|
| US (2) | US9672316B2 (https=) |
| EP (1) | EP3022605B1 (https=) |
| JP (1) | JP2016531424A (https=) |
| KR (2) | KR20160034300A (https=) |
| CN (1) | CN105378565B (https=) |
| AU (1) | AU2014291840B2 (https=) |
| BR (1) | BR112016000222B1 (https=) |
| CA (1) | CA2917723C (https=) |
| IL (1) | IL243151B (https=) |
| MY (1) | MY174370A (https=) |
| SG (1) | SG11201600093PA (https=) |
| TW (1) | TWI639095B (https=) |
| WO (1) | WO2015008021A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105939837B (zh) * | 2014-01-16 | 2019-05-10 | 惠普发展公司，有限责任合伙企业 | 对用于增材制造系统的切片数据进行处理 |
| JP6896055B2 (ja) | 2016-07-19 | 2021-06-30 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィステップにおける基板に施されるべきパターンの組み合わせの決定 |
| US10714427B2 (en) | 2016-09-08 | 2020-07-14 | Asml Netherlands B.V. | Secure chips with serial numbers |
| NL2019502B1 (en) | 2016-09-08 | 2018-08-31 | Mapper Lithography Ip Bv | Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system |
| US20180068047A1 (en) | 2016-09-08 | 2018-03-08 | Mapper Lithography Ip B.V. | Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system |
| US10418324B2 (en) | 2016-10-27 | 2019-09-17 | Asml Netherlands B.V. | Fabricating unique chips using a charged particle multi-beamlet lithography system |
| EP3821794B1 (en) * | 2016-12-16 | 2023-02-15 | St. Jude Medical International Holding S.à r.l. | Wireless force sensor |
| CN116666358A (zh) * | 2016-12-23 | 2023-08-29 | Asml荷兰有限公司 | 具有序列号的安全芯片 |
| WO2018117275A1 (en) | 2016-12-23 | 2018-06-28 | Mapper Lithography Ip B.V. | Fabricating unique chips using a charged particle multi-beamlet lithography system |
| NL2018368B1 (en) * | 2017-02-13 | 2018-09-04 | Mapper Lithography Ip Bv | Data generation for fabricating unique chips using a charged particle multi-beamlet lithography system |
| US10423751B2 (en) | 2017-09-29 | 2019-09-24 | International Business Machines Corporation | Semiconductor package floating metal checks |
| US10423752B2 (en) | 2017-09-29 | 2019-09-24 | International Business Machines Corporation | Semiconductor package metal shadowing checks |
| CN110308621B (zh) * | 2019-06-20 | 2021-09-17 | 合肥芯碁微电子装备股份有限公司 | 一种激光直写成像设备内层基板的对准定位方法 |
| US11890678B2 (en) | 2021-10-25 | 2024-02-06 | Honeywell Federal Manufacturing & Technologies, Llc | Systems and methods for abrasive oxide removal in additive manufacturing processes |
| CN117192908B (zh) * | 2023-08-22 | 2024-04-09 | 安徽国芯智能装备有限公司 | 一种直写式光刻机涨缩一致的补偿方法 |
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| JPS63274156A (ja) * | 1987-05-02 | 1988-11-11 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US5512397A (en) | 1988-05-16 | 1996-04-30 | Leedy; Glenn J. | Stepper scanner discretionary lithography and common mask discretionary lithography for integrated circuits |
| US5103557A (en) * | 1988-05-16 | 1992-04-14 | Leedy Glenn J | Making and testing an integrated circuit using high density probe points |
| US4924589A (en) | 1988-05-16 | 1990-05-15 | Leedy Glenn J | Method of making and testing an integrated circuit |
| JPH0338862A (ja) * | 1989-07-05 | 1991-02-19 | Ricoh Co Ltd | 半導体集積回路装置の電源調節方法 |
| DE69322667D1 (de) * | 1992-02-18 | 1999-02-04 | Elm Technology Corp | Lithographie nach Bedarf für integrierte Schaltungen |
| JPH08272480A (ja) * | 1995-03-28 | 1996-10-18 | Matsushita Electric Ind Co Ltd | 遅延調整手段付き半導体集積回路とその遅延調整方式 |
| US5989752A (en) | 1996-05-29 | 1999-11-23 | Chiu; Tzu-Yin | Reconfigurable mask |
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| US6065113A (en) * | 1997-03-07 | 2000-05-16 | Texas Instruments Incorporated | Circuits, systems, and methods for uniquely identifying a microprocessor at the instruction set level employing one-time programmable register |
| KR100859825B1 (ko) | 2000-01-20 | 2008-09-23 | 자비탄 세미콘덕터, 인코포레이티드 | 개별화된 하드웨어 |
| JP3555859B2 (ja) * | 2000-03-27 | 2004-08-18 | 広島日本電気株式会社 | 半導体生産システム及び半導体装置の生産方法 |
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| US20030233630A1 (en) * | 2001-12-14 | 2003-12-18 | Torbjorn Sandstrom | Methods and systems for process control of corner feature embellishment |
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| US7262070B2 (en) | 2003-09-29 | 2007-08-28 | Intel Corporation | Method to make a weight compensating/tuning layer on a substrate |
| KR101258671B1 (ko) * | 2004-02-20 | 2013-04-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법, ｉｃ 카드, ｉｃ 태그, ｒｆｉｄ,트랜스폰더, 지폐, 유가증권, 여권, 전자 기기, 가방 및의류 |
| US6962875B1 (en) * | 2004-06-11 | 2005-11-08 | International Business Machines Corporation | Variable contact method and structure |
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| GB0427563D0 (en) | 2004-12-16 | 2005-01-19 | Plastic Logic Ltd | A method of semiconductor patterning |
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| JP4914589B2 (ja) * | 2005-08-26 | 2012-04-11 | 三菱電機株式会社 | 半導体製造装置、半導体製造方法および半導体装置 |
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| JP2011077423A (ja) * | 2009-10-01 | 2011-04-14 | Tohoku Univ | 半導体集積回路および集積回路製造方法および集積回路設計方法 |
| FR2957193B1 (fr) * | 2010-03-03 | 2012-04-20 | Soitec Silicon On Insulator | Cellule a chemin de donnees sur substrat seoi avec grille de controle arriere enterree sous la couche isolante |
| JP2012137986A (ja) * | 2010-12-27 | 2012-07-19 | Renesas Electronics Corp | 半導体集積回路のレイアウト設計装置、半導体集積回路のレイアウト設計方法及びプログラム |
| CN102707581A (zh) | 2012-05-31 | 2012-10-03 | 合肥芯硕半导体有限公司 | 一种光刻物镜的畸变补偿方法 |
-
2013
- 2013-07-17 US US13/944,129 patent/US9672316B2/en active Active
-
2014
- 2014-05-08 EP EP14725236.5A patent/EP3022605B1/en active Active
- 2014-05-08 CA CA2917723A patent/CA2917723C/en active Active
- 2014-05-08 SG SG11201600093PA patent/SG11201600093PA/en unknown
- 2014-05-08 CN CN201480038762.9A patent/CN105378565B/zh active Active
- 2014-05-08 MY MYPI2016700059A patent/MY174370A/en unknown
- 2014-05-08 AU AU2014291840A patent/AU2014291840B2/en active Active
- 2014-05-08 KR KR1020167001592A patent/KR20160034300A/ko not_active Ceased
- 2014-05-08 KR KR1020217009431A patent/KR102386526B1/ko active Active
- 2014-05-08 BR BR112016000222-9A patent/BR112016000222B1/pt active IP Right Grant
- 2014-05-08 JP JP2016526688A patent/JP2016531424A/ja active Pending
- 2014-05-08 WO PCT/GB2014/051398 patent/WO2015008021A1/en not_active Ceased
- 2014-05-14 TW TW103116991A patent/TWI639095B/zh active
-
2015
- 2015-12-16 IL IL243151A patent/IL243151B/en active IP Right Grant
-
2017
- 2017-04-27 US US15/498,804 patent/US10303840B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI639095B (zh) | 2018-10-21 |
| KR102386526B1 (ko) | 2022-04-14 |
| CA2917723C (en) | 2022-04-19 |
| MY174370A (en) | 2020-04-13 |
| EP3022605A1 (en) | 2016-05-25 |
| US9672316B2 (en) | 2017-06-06 |
| AU2014291840A1 (en) | 2016-02-18 |
| WO2015008021A1 (en) | 2015-01-22 |
| EP3022605B1 (en) | 2020-02-19 |
| US20150026650A1 (en) | 2015-01-22 |
| KR20160034300A (ko) | 2016-03-29 |
| CN105378565A (zh) | 2016-03-02 |
| IL243151B (en) | 2019-03-31 |
| CA2917723A1 (en) | 2015-01-22 |
| US10303840B2 (en) | 2019-05-28 |
| BR112016000222B1 (pt) | 2022-05-17 |
| BR112016000222A2 (https=) | 2017-07-25 |
| US20170228493A1 (en) | 2017-08-10 |
| JP2016531424A (ja) | 2016-10-06 |
| AU2014291840B2 (en) | 2018-02-08 |
| TW201504832A (zh) | 2015-02-01 |
| CN105378565B (zh) | 2018-03-27 |
| KR20210037758A (ko) | 2021-04-06 |
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