SG11201508901XA - Reflective mask blank and method for manufacturing same, reflective mask, and method for manufacturing semiconductor device - Google Patents

Reflective mask blank and method for manufacturing same, reflective mask, and method for manufacturing semiconductor device

Info

Publication number
SG11201508901XA
SG11201508901XA SG11201508901XA SG11201508901XA SG11201508901XA SG 11201508901X A SG11201508901X A SG 11201508901XA SG 11201508901X A SG11201508901X A SG 11201508901XA SG 11201508901X A SG11201508901X A SG 11201508901XA SG 11201508901X A SG11201508901X A SG 11201508901XA
Authority
SG
Singapore
Prior art keywords
reflective mask
manufacturing
semiconductor device
mask blank
manufacturing semiconductor
Prior art date
Application number
SG11201508901XA
Other languages
English (en)
Inventor
Kazuhiro Hamamoto
Tatsuo ASAKAWA
Tsutomu Shoki
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201508901XA publication Critical patent/SG11201508901XA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84Inspecting
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201508901XA 2013-09-18 2014-08-29 Reflective mask blank and method for manufacturing same, reflective mask, and method for manufacturing semiconductor device SG11201508901XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013193070 2013-09-18
PCT/JP2014/072689 WO2015041023A1 (ja) 2013-09-18 2014-08-29 反射型マスクブランク及びその製造方法、反射型マスク並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11201508901XA true SG11201508901XA (en) 2015-11-27

Family

ID=52688678

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201508901XA SG11201508901XA (en) 2013-09-18 2014-08-29 Reflective mask blank and method for manufacturing same, reflective mask, and method for manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US9726969B2 (ja)
JP (2) JP5716146B1 (ja)
KR (2) KR20170120212A (ja)
SG (1) SG11201508901XA (ja)
TW (2) TWI526774B (ja)
WO (1) WO2015041023A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6069609B2 (ja) * 2015-03-26 2017-02-01 株式会社リガク 二重湾曲x線集光素子およびその構成体、二重湾曲x線分光素子およびその構成体の製造方法
JP6739960B2 (ja) * 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
KR20180057813A (ko) 2016-11-22 2018-05-31 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크
KR20190117745A (ko) * 2017-03-02 2019-10-16 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
KR20240025717A (ko) * 2017-03-03 2024-02-27 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
KR102631490B1 (ko) * 2017-09-07 2024-01-30 가부시키가이샤 니콘 포토마스크 블랭크, 포토마스크, 노광 방법, 및 디바이스의 제조 방법
JP6845122B2 (ja) * 2017-11-27 2021-03-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
US11619875B2 (en) 2020-06-29 2023-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
TWI777614B (zh) * 2021-06-11 2022-09-11 達運精密工業股份有限公司 金屬遮罩及其製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05189756A (ja) * 1991-08-22 1993-07-30 Hitachi Metals Ltd 磁気記録媒体
JPH0785463A (ja) * 1993-09-20 1995-03-31 A G Technol Kk 磁気ディスク
JP2002288823A (ja) 2002-03-14 2002-10-04 Nippon Sheet Glass Co Ltd 情報記録媒体用基板の製造方法
JP2004199846A (ja) 2002-10-23 2004-07-15 Nippon Sheet Glass Co Ltd 磁気記録媒体用ガラス基板及びその製造方法
US7504185B2 (en) 2005-10-03 2009-03-17 Asahi Glass Company, Limited Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography
JP2007272995A (ja) * 2006-03-31 2007-10-18 Hoya Corp 磁気ディスク装置および非磁性基板の良否判定方法、磁気ディスク、並びに磁気ディスク装置
JP4867695B2 (ja) 2006-04-21 2012-02-01 旭硝子株式会社 Euvリソグラフィ用反射型マスクブランク
CN102077279B (zh) 2008-06-30 2012-06-20 Hoya株式会社 磁盘用基板以及磁盘
JP5136647B2 (ja) 2008-09-05 2013-02-06 旭硝子株式会社 Euvリソグラフィ用反射型マスクブランクおよびその製造方法
KR101640333B1 (ko) 2012-03-30 2016-07-15 호야 가부시키가이샤 마스크 블랭크용 기판, 다층 반사막 부착 기판, 투과형 마스크 블랭크, 반사형 마스크 블랭크, 투과형 마스크, 반사형 마스크 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
KR20160055724A (ko) 2016-05-18
US9726969B2 (en) 2017-08-08
JPWO2015041023A1 (ja) 2017-03-02
TW201614363A (en) 2016-04-16
WO2015041023A1 (ja) 2015-03-26
TW201514608A (zh) 2015-04-16
JP5716146B1 (ja) 2015-05-13
US20160238925A1 (en) 2016-08-18
KR101875790B1 (ko) 2018-07-06
KR20170120212A (ko) 2017-10-30
TWI526774B (zh) 2016-03-21
JP2015156494A (ja) 2015-08-27

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