SG11201508899TA - Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device - Google Patents
Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201508899TA SG11201508899TA SG11201508899TA SG11201508899TA SG11201508899TA SG 11201508899T A SG11201508899T A SG 11201508899TA SG 11201508899T A SG11201508899T A SG 11201508899TA SG 11201508899T A SG11201508899T A SG 11201508899TA SG 11201508899T A SG11201508899T A SG 11201508899TA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- mask blank
- manufacturing
- semiconductor device
- blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optics & Photonics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013179123 | 2013-08-30 | ||
| PCT/JP2014/072688 WO2015030159A1 (ja) | 2013-08-30 | 2014-08-29 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201508899TA true SG11201508899TA (en) | 2015-11-27 |
Family
ID=52586706
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201508899TA SG11201508899TA (en) | 2013-08-30 | 2014-08-29 | Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
| SG10201805334PA SG10201805334PA (en) | 2013-08-30 | 2014-08-29 | Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201805334PA SG10201805334PA (en) | 2013-08-30 | 2014-08-29 | Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9720315B2 (https=) |
| JP (2) | JP5716145B1 (https=) |
| KR (2) | KR101858947B1 (https=) |
| SG (2) | SG11201508899TA (https=) |
| TW (2) | TWI522729B (https=) |
| WO (1) | WO2015030159A1 (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10241390B2 (en) | 2016-02-24 | 2019-03-26 | AGC Inc. | Reflective mask blank and process for producing the reflective mask blank |
| US10948814B2 (en) * | 2016-03-23 | 2021-03-16 | AGC Inc. | Substrate for use as mask blank, and mask blank |
| US11187972B2 (en) * | 2016-10-21 | 2021-11-30 | Hoya Corporation | Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device |
| KR102741625B1 (ko) | 2016-11-22 | 2024-12-16 | 삼성전자주식회사 | 극자외선 리소그래피용 위상 반전 마스크 |
| US10775693B2 (en) * | 2016-12-07 | 2020-09-15 | Fundacio Institut De Ciencies Fotoniques | Transparent and electrically conductive coatings containing nitrides, borides or carbides |
| JP2019053229A (ja) | 2017-09-15 | 2019-04-04 | 東芝メモリ株式会社 | 露光用マスクおよびその製造方法 |
| US11106126B2 (en) * | 2018-09-28 | 2021-08-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing EUV photo masks |
| DE102019110706B4 (de) | 2018-09-28 | 2024-08-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zum Herstellen von EUV-Fotomasken sowie Ätzvorrichtung |
| JP7662511B2 (ja) * | 2019-03-28 | 2025-04-15 | Hoya株式会社 | マスクブランク用基板、導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| US11448956B2 (en) * | 2019-09-05 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV mask |
| JP7226384B2 (ja) * | 2020-04-10 | 2023-02-21 | 信越化学工業株式会社 | 反射型マスクブランク、その製造方法及び反射型マスク |
| KR102567180B1 (ko) * | 2020-04-21 | 2023-08-16 | 에이지씨 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 |
| JP7268644B2 (ja) * | 2020-06-09 | 2023-05-08 | 信越化学工業株式会社 | マスクブランクス用ガラス基板 |
| US11500282B2 (en) * | 2020-06-18 | 2022-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV photo masks and manufacturing method thereof |
| KR102937512B1 (ko) | 2020-09-29 | 2026-03-12 | 삼성전자주식회사 | 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법 |
| KR20220058424A (ko) * | 2020-10-30 | 2022-05-09 | 에이지씨 가부시키가이샤 | Euvl용 유리 기판, 및 euvl용 마스크 블랭크 |
| US20220137500A1 (en) * | 2020-10-30 | 2022-05-05 | AGC Inc. | Glass substrate for euvl, and mask blank for euvl |
| JP7633832B2 (ja) * | 2021-02-25 | 2025-02-20 | Hoya株式会社 | マスクブランク、反射型マスク、および半導体デバイスの製造方法 |
| TWI777614B (zh) * | 2021-06-11 | 2022-09-11 | 達運精密工業股份有限公司 | 金屬遮罩及其製造方法 |
| CN116560176A (zh) * | 2021-12-31 | 2023-08-08 | Sk恩普士有限公司 | 空白掩模、光掩模以及半导体器件制造方法 |
| KR102660636B1 (ko) * | 2021-12-31 | 2024-04-25 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| JP7482197B2 (ja) * | 2021-12-31 | 2024-05-13 | エスケー エンパルス カンパニー リミテッド | ブランクマスク及びそれを用いたフォトマスク |
| JP2024170294A (ja) * | 2023-05-26 | 2024-12-06 | 信越化学工業株式会社 | マスクブランクス用基板及びその製造方法 |
| JP2025073748A (ja) * | 2023-10-27 | 2025-05-13 | 信越化学工業株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6319635B1 (en) * | 1999-12-06 | 2001-11-20 | The Regents Of The University Of California | Mitigation of substrate defects in reticles using multilayer buffer layers |
| DE102004008824B4 (de) | 2004-02-20 | 2006-05-04 | Schott Ag | Glaskeramik mit geringer Wärmeausdehnung sowie deren Verwendung |
| JP4692984B2 (ja) | 2004-09-24 | 2011-06-01 | Ｈｏｙａ株式会社 | 反射型マスクブランク、反射型マスク及び多層膜反射鏡並びにこれらの製造方法 |
| JP4786899B2 (ja) * | 2004-12-20 | 2011-10-05 | Ｈｏｙａ株式会社 | マスクブランクス用ガラス基板の製造方法，マスクブランクスの製造方法、反射型マスクブランクスの製造方法、露光用マスクの製造方法、反射型マスクの製造方法、及び半導体装置の製造方法 |
| US7504185B2 (en) | 2005-10-03 | 2009-03-17 | Asahi Glass Company, Limited | Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography |
| JP4867695B2 (ja) | 2006-04-21 | 2012-02-01 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| JP4668881B2 (ja) * | 2006-10-10 | 2011-04-13 | 信越石英株式会社 | 石英ガラス基板の表面処理方法及び水素ラジカルエッチング装置 |
| US20080132150A1 (en) * | 2006-11-30 | 2008-06-05 | Gregory John Arserio | Polishing method for extreme ultraviolet optical elements and elements produced using the method |
| JP5169163B2 (ja) | 2006-12-01 | 2013-03-27 | 旭硝子株式会社 | 予備研磨されたガラス基板表面を仕上げ加工する方法 |
| KR20110065439A (ko) | 2008-09-05 | 2011-06-15 | 아사히 가라스 가부시키가이샤 | Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법 |
| KR20140004101A (ko) | 2011-02-01 | 2014-01-10 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 |
| JP6125772B2 (ja) * | 2011-09-28 | 2017-05-10 | Hoya株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
| WO2013084978A1 (ja) * | 2011-12-09 | 2013-06-13 | 信越石英株式会社 | チタニア－シリカガラス製ｅｕｖリソグラフィ用フォトマスク基板 |
-
2014
- 2014-08-29 TW TW103130025A patent/TWI522729B/zh active
- 2014-08-29 KR KR1020157031307A patent/KR101858947B1/ko active Active
- 2014-08-29 KR KR1020177030334A patent/KR102012783B1/ko active Active
- 2014-08-29 TW TW104143242A patent/TWI616718B/zh active
- 2014-08-29 US US14/787,497 patent/US9720315B2/en active Active
- 2014-08-29 JP JP2015504434A patent/JP5716145B1/ja active Active
- 2014-08-29 SG SG11201508899TA patent/SG11201508899TA/en unknown
- 2014-08-29 WO PCT/JP2014/072688 patent/WO2015030159A1/ja not_active Ceased
- 2014-08-29 SG SG10201805334PA patent/SG10201805334PA/en unknown
-
2015
- 2015-03-16 JP JP2015052132A patent/JP6388841B2/ja active Active
-
2017
- 2017-06-27 US US15/634,247 patent/US10191365B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10191365B2 (en) | 2019-01-29 |
| JPWO2015030159A1 (ja) | 2017-03-02 |
| KR101858947B1 (ko) | 2018-05-17 |
| JP2015133514A (ja) | 2015-07-23 |
| TWI522729B (zh) | 2016-02-21 |
| JP5716145B1 (ja) | 2015-05-13 |
| US20170329215A1 (en) | 2017-11-16 |
| KR102012783B1 (ko) | 2019-08-21 |
| US20160161837A1 (en) | 2016-06-09 |
| WO2015030159A1 (ja) | 2015-03-05 |
| JP6388841B2 (ja) | 2018-09-12 |
| KR20170121315A (ko) | 2017-11-01 |
| TW201612621A (en) | 2016-04-01 |
| KR20160051681A (ko) | 2016-05-11 |
| TW201514614A (zh) | 2015-04-16 |
| SG10201805334PA (en) | 2018-08-30 |
| TWI616718B (zh) | 2018-03-01 |
| US9720315B2 (en) | 2017-08-01 |
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