TWI522729B - Method for manufacturing a reflective mask substrate, a reflective mask substrate, a reflection type mask, and a semiconductor device - Google Patents

Method for manufacturing a reflective mask substrate, a reflective mask substrate, a reflection type mask, and a semiconductor device Download PDF

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Publication number
TWI522729B
TWI522729B TW103130025A TW103130025A TWI522729B TW I522729 B TWI522729 B TW I522729B TW 103130025 A TW103130025 A TW 103130025A TW 103130025 A TW103130025 A TW 103130025A TW I522729 B TWI522729 B TW I522729B
Authority
TW
Taiwan
Prior art keywords
film
reflective
substrate
absorber
mask
Prior art date
Application number
TW103130025A
Other languages
English (en)
Chinese (zh)
Other versions
TW201514614A (zh
Inventor
濱本和宏
淺川龍男
笑喜勉
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201514614A publication Critical patent/TW201514614A/zh
Application granted granted Critical
Publication of TWI522729B publication Critical patent/TWI522729B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
TW103130025A 2013-08-30 2014-08-29 Method for manufacturing a reflective mask substrate, a reflective mask substrate, a reflection type mask, and a semiconductor device TWI522729B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013179123 2013-08-30

Publications (2)

Publication Number Publication Date
TW201514614A TW201514614A (zh) 2015-04-16
TWI522729B true TWI522729B (zh) 2016-02-21

Family

ID=52586706

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103130025A TWI522729B (zh) 2013-08-30 2014-08-29 Method for manufacturing a reflective mask substrate, a reflective mask substrate, a reflection type mask, and a semiconductor device
TW104143242A TWI616718B (zh) 2013-08-30 2014-08-29 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及半導體裝置之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104143242A TWI616718B (zh) 2013-08-30 2014-08-29 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及半導體裝置之製造方法

Country Status (6)

Country Link
US (2) US9720315B2 (https=)
JP (2) JP5716145B1 (https=)
KR (2) KR101858947B1 (https=)
SG (2) SG11201508899TA (https=)
TW (2) TWI522729B (https=)
WO (1) WO2015030159A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777614B (zh) * 2021-06-11 2022-09-11 達運精密工業股份有限公司 金屬遮罩及其製造方法
TWI856458B (zh) * 2021-12-31 2024-09-21 南韓商Ｓｋ恩普士股份有限公司 空白罩幕、使用其的光罩以及半導體裝置的製造方法

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US10241390B2 (en) 2016-02-24 2019-03-26 AGC Inc. Reflective mask blank and process for producing the reflective mask blank
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
US11187972B2 (en) * 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
KR102741625B1 (ko) 2016-11-22 2024-12-16 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크
US10775693B2 (en) * 2016-12-07 2020-09-15 Fundacio Institut De Ciencies Fotoniques Transparent and electrically conductive coatings containing nitrides, borides or carbides
JP2019053229A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 露光用マスクおよびその製造方法
US11106126B2 (en) * 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing EUV photo masks
DE102019110706B4 (de) 2018-09-28 2024-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum Herstellen von EUV-Fotomasken sowie Ätzvorrichtung
JP7662511B2 (ja) * 2019-03-28 2025-04-15 Hoya株式会社 マスクブランク用基板、導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
US11448956B2 (en) * 2019-09-05 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. EUV mask
JP7226384B2 (ja) * 2020-04-10 2023-02-21 信越化学工業株式会社 反射型マスクブランク、その製造方法及び反射型マスク
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP7268644B2 (ja) * 2020-06-09 2023-05-08 信越化学工業株式会社 マスクブランクス用ガラス基板
US11500282B2 (en) * 2020-06-18 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
KR102937512B1 (ko) 2020-09-29 2026-03-12 삼성전자주식회사 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
US20220137500A1 (en) * 2020-10-30 2022-05-05 AGC Inc. Glass substrate for euvl, and mask blank for euvl
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
CN116560176A (zh) * 2021-12-31 2023-08-08 Sk恩普士有限公司 空白掩模、光掩模以及半导体器件制造方法
KR102660636B1 (ko) * 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
JP2024170294A (ja) * 2023-05-26 2024-12-06 信越化学工業株式会社 マスクブランクス用基板及びその製造方法
JP2025073748A (ja) * 2023-10-27 2025-05-13 信越化学工業株式会社 反射型マスクブランク及び反射型マスクの製造方法

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JP4692984B2 (ja) 2004-09-24 2011-06-01 Ｈｏｙａ株式会社 反射型マスクブランク、反射型マスク及び多層膜反射鏡並びにこれらの製造方法
JP4786899B2 (ja) * 2004-12-20 2011-10-05 Ｈｏｙａ株式会社 マスクブランクス用ガラス基板の製造方法，マスクブランクスの製造方法、反射型マスクブランクスの製造方法、露光用マスクの製造方法、反射型マスクの製造方法、及び半導体装置の製造方法
US7504185B2 (en) 2005-10-03 2009-03-17 Asahi Glass Company, Limited Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography
JP4867695B2 (ja) 2006-04-21 2012-02-01 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP4668881B2 (ja) * 2006-10-10 2011-04-13 信越石英株式会社 石英ガラス基板の表面処理方法及び水素ラジカルエッチング装置
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JP5169163B2 (ja) 2006-12-01 2013-03-27 旭硝子株式会社 予備研磨されたガラス基板表面を仕上げ加工する方法
KR20110065439A (ko) 2008-09-05 2011-06-15 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
KR20140004101A (ko) 2011-02-01 2014-01-10 아사히 가라스 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP6125772B2 (ja) * 2011-09-28 2017-05-10 Hoya株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
WO2013084978A1 (ja) * 2011-12-09 2013-06-13 信越石英株式会社 チタニア－シリカガラス製ｅｕｖリソグラフィ用フォトマスク基板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI777614B (zh) * 2021-06-11 2022-09-11 達運精密工業股份有限公司 金屬遮罩及其製造方法
TWI856458B (zh) * 2021-12-31 2024-09-21 南韓商Ｓｋ恩普士股份有限公司 空白罩幕、使用其的光罩以及半導體裝置的製造方法

Also Published As

Publication number Publication date
US10191365B2 (en) 2019-01-29
JPWO2015030159A1 (ja) 2017-03-02
KR101858947B1 (ko) 2018-05-17
JP2015133514A (ja) 2015-07-23
JP5716145B1 (ja) 2015-05-13
SG11201508899TA (en) 2015-11-27
US20170329215A1 (en) 2017-11-16
KR102012783B1 (ko) 2019-08-21
US20160161837A1 (en) 2016-06-09
WO2015030159A1 (ja) 2015-03-05
JP6388841B2 (ja) 2018-09-12
KR20170121315A (ko) 2017-11-01
TW201612621A (en) 2016-04-01
KR20160051681A (ko) 2016-05-11
TW201514614A (zh) 2015-04-16
SG10201805334PA (en) 2018-08-30
TWI616718B (zh) 2018-03-01
US9720315B2 (en) 2017-08-01

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