JP5716145B1 - 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法 - Google Patents

反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法 Download PDF

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Publication number
JP5716145B1
JP5716145B1 JP2015504434A JP2015504434A JP5716145B1 JP 5716145 B1 JP5716145 B1 JP 5716145B1 JP 2015504434 A JP2015504434 A JP 2015504434A JP 2015504434 A JP2015504434 A JP 2015504434A JP 5716145 B1 JP5716145 B1 JP 5716145B1
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Japan
Prior art keywords
film
mask blank
reflective
reflective mask
absorber
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Japanese (ja)
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JPWO2015030159A1 (ja
Inventor
和宏 浜本
和宏 浜本
竜男 淺川
竜男 淺川
笑喜　勉
勉 笑喜
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Hoya Corp
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Hoya Corp
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
JP2015504434A 2013-08-30 2014-08-29 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法 Active JP5716145B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015504434A JP5716145B1 (ja) 2013-08-30 2014-08-29 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013179123 2013-08-30
JP2013179123 2013-08-30
JP2015504434A JP5716145B1 (ja) 2013-08-30 2014-08-29 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法
PCT/JP2014/072688 WO2015030159A1 (ja) 2013-08-30 2014-08-29 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法

Related Child Applications (1)

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JP2015052132A Division JP6388841B2 (ja) 2013-08-30 2015-03-16 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法

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JP5716145B1 true JP5716145B1 (ja) 2015-05-13
JPWO2015030159A1 JPWO2015030159A1 (ja) 2017-03-02

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JP2015504434A Active JP5716145B1 (ja) 2013-08-30 2014-08-29 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法
JP2015052132A Active JP6388841B2 (ja) 2013-08-30 2015-03-16 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク及び半導体装置の製造方法

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Country Status (6)

Country Link
US (2) US9720315B2 (https=)
JP (2) JP5716145B1 (https=)
KR (2) KR101858947B1 (https=)
SG (2) SG11201508899TA (https=)
TW (2) TWI522729B (https=)
WO (1) WO2015030159A1 (https=)

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US10241390B2 (en) 2016-02-24 2019-03-26 AGC Inc. Reflective mask blank and process for producing the reflective mask blank
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
US11187972B2 (en) * 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
KR102741625B1 (ko) 2016-11-22 2024-12-16 삼성전자주식회사 극자외선 리소그래피용 위상 반전 마스크
US10775693B2 (en) * 2016-12-07 2020-09-15 Fundacio Institut De Ciencies Fotoniques Transparent and electrically conductive coatings containing nitrides, borides or carbides
JP2019053229A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 露光用マスクおよびその製造方法
US11106126B2 (en) * 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing EUV photo masks
DE102019110706B4 (de) 2018-09-28 2024-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum Herstellen von EUV-Fotomasken sowie Ätzvorrichtung
JP7662511B2 (ja) * 2019-03-28 2025-04-15 Hoya株式会社 マスクブランク用基板、導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
US11448956B2 (en) * 2019-09-05 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. EUV mask
JP7226384B2 (ja) * 2020-04-10 2023-02-21 信越化学工業株式会社 反射型マスクブランク、その製造方法及び反射型マスク
KR102567180B1 (ko) * 2020-04-21 2023-08-16 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
JP7268644B2 (ja) * 2020-06-09 2023-05-08 信越化学工業株式会社 マスクブランクス用ガラス基板
US11500282B2 (en) * 2020-06-18 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
KR102937512B1 (ko) 2020-09-29 2026-03-12 삼성전자주식회사 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법
KR20220058424A (ko) * 2020-10-30 2022-05-09 에이지씨 가부시키가이샤 Euvl용 유리 기판, 및 euvl용 마스크 블랭크
US20220137500A1 (en) * 2020-10-30 2022-05-05 AGC Inc. Glass substrate for euvl, and mask blank for euvl
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
TWI777614B (zh) * 2021-06-11 2022-09-11 達運精密工業股份有限公司 金屬遮罩及其製造方法
CN116560176A (zh) * 2021-12-31 2023-08-08 Sk恩普士有限公司 空白掩模、光掩模以及半导体器件制造方法
KR102660636B1 (ko) * 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
JP7482197B2 (ja) * 2021-12-31 2024-05-13 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
JP2024170294A (ja) * 2023-05-26 2024-12-06 信越化学工業株式会社 マスクブランクス用基板及びその製造方法
JP2025073748A (ja) * 2023-10-27 2025-05-13 信越化学工業株式会社 反射型マスクブランク及び反射型マスクの製造方法

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JP2006176341A (ja) * 2004-12-20 2006-07-06 Hoya Corp マスクブランクス用ガラス基板の製造方法，マスクブランクスの製造方法，露光用マスクの製造方法，及び，半導体装置の製造方法
JP2008094649A (ja) * 2006-10-10 2008-04-24 Shinetsu Quartz Prod Co Ltd 石英ガラス基板の表面処理方法及び水素ラジカルエッチング装置
JP2008156215A (ja) * 2006-12-01 2008-07-10 Asahi Glass Co Ltd 予備研磨されたガラス基板表面を仕上げ加工する方法
WO2013084978A1 (ja) * 2011-12-09 2013-06-13 信越石英株式会社 チタニア－シリカガラス製ｅｕｖリソグラフィ用フォトマスク基板

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JP4867695B2 (ja) 2006-04-21 2012-02-01 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
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JP6125772B2 (ja) * 2011-09-28 2017-05-10 Hoya株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法

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JP2006176341A (ja) * 2004-12-20 2006-07-06 Hoya Corp マスクブランクス用ガラス基板の製造方法，マスクブランクスの製造方法，露光用マスクの製造方法，及び，半導体装置の製造方法
JP2008094649A (ja) * 2006-10-10 2008-04-24 Shinetsu Quartz Prod Co Ltd 石英ガラス基板の表面処理方法及び水素ラジカルエッチング装置
JP2008156215A (ja) * 2006-12-01 2008-07-10 Asahi Glass Co Ltd 予備研磨されたガラス基板表面を仕上げ加工する方法
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Publication number Publication date
US10191365B2 (en) 2019-01-29
JPWO2015030159A1 (ja) 2017-03-02
KR101858947B1 (ko) 2018-05-17
JP2015133514A (ja) 2015-07-23
TWI522729B (zh) 2016-02-21
SG11201508899TA (en) 2015-11-27
US20170329215A1 (en) 2017-11-16
KR102012783B1 (ko) 2019-08-21
US20160161837A1 (en) 2016-06-09
WO2015030159A1 (ja) 2015-03-05
JP6388841B2 (ja) 2018-09-12
KR20170121315A (ko) 2017-11-01
TW201612621A (en) 2016-04-01
KR20160051681A (ko) 2016-05-11
TW201514614A (zh) 2015-04-16
SG10201805334PA (en) 2018-08-30
TWI616718B (zh) 2018-03-01
US9720315B2 (en) 2017-08-01

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