SG11201503751TA - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG11201503751TA SG11201503751TA SG11201503751TA SG11201503751TA SG11201503751TA SG 11201503751T A SG11201503751T A SG 11201503751TA SG 11201503751T A SG11201503751T A SG 11201503751TA SG 11201503751T A SG11201503751T A SG 11201503751TA SG 11201503751T A SG11201503751T A SG 11201503751TA
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Mechanical Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012251521A JP6054149B2 (ja) | 2012-11-15 | 2012-11-15 | 研磨用組成物 |
| PCT/JP2013/078967 WO2014077107A1 (ja) | 2012-11-15 | 2013-10-25 | 研磨用組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201503751TA true SG11201503751TA (en) | 2015-06-29 |
Family
ID=50731025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201503751TA SG11201503751TA (en) | 2012-11-15 | 2013-10-25 | Polishing composition |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9837283B2 (de) |
| EP (1) | EP2922085A4 (de) |
| JP (1) | JP6054149B2 (de) |
| KR (1) | KR102150403B1 (de) |
| CN (1) | CN104781366A (de) |
| SG (1) | SG11201503751TA (de) |
| TW (1) | TWI604035B (de) |
| WO (1) | WO2014077107A1 (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015203081A (ja) * | 2014-04-15 | 2015-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP6517555B2 (ja) * | 2014-09-30 | 2019-05-22 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| US20170342304A1 (en) * | 2015-01-19 | 2017-11-30 | Fujimi Incorporated | Polishing composition |
| JP6649279B2 (ja) | 2015-01-19 | 2020-02-19 | 株式会社フジミインコーポレーテッド | 変性コロイダルシリカおよびその製造方法、並びにこれを用いた研磨剤 |
| CN108701616B (zh) * | 2016-02-16 | 2023-04-14 | Cmc材料股份有限公司 | 抛光iii-v族材料的方法 |
| WO2017163910A1 (ja) * | 2016-03-24 | 2017-09-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| CN105916081B (zh) * | 2016-05-05 | 2019-10-08 | 歌尔股份有限公司 | 一种扬声器模组 |
| CN109743878B (zh) * | 2016-09-21 | 2021-07-06 | 昭和电工材料株式会社 | 悬浮液和研磨方法 |
| CN106567897B (zh) * | 2016-11-13 | 2019-04-16 | 青岛方冠摩擦材料有限公司 | 一种新型复合耐磨刹车片的制备方法 |
| CN107841288A (zh) * | 2017-12-12 | 2018-03-27 | 戚明海 | Cmp研磨剂及其制造方法 |
| CN108148507B (zh) * | 2017-12-18 | 2020-12-04 | 清华大学 | 一种用于熔石英的抛光组合物 |
| KR102442600B1 (ko) * | 2018-11-09 | 2022-09-14 | 주식회사 케이씨텍 | 연마용 슬러리 조성물 |
| JP7158280B2 (ja) * | 2018-12-28 | 2022-10-21 | ニッタ・デュポン株式会社 | 半導体研磨用組成物 |
| US20200308451A1 (en) * | 2019-03-25 | 2020-10-01 | Cabot Microelectronics Corporation | Additives to improve particle dispersion for cmp slurry |
| JP7414437B2 (ja) * | 2019-09-13 | 2024-01-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
| TW202229478A (zh) * | 2020-09-29 | 2022-08-01 | 日商福吉米股份有限公司 | 研磨用組成物及其製造方法、研磨方法以及基板的製造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW420716B (en) * | 1996-12-09 | 2001-02-01 | Ibm | Polish process and slurry for planarization |
| JP2000109816A (ja) * | 1998-10-05 | 2000-04-18 | Okamoto Machine Tool Works Ltd | 研磨剤スラリ−の調製方法 |
| US6524461B2 (en) * | 1998-10-14 | 2003-02-25 | Faraday Technology Marketing Group, Llc | Electrodeposition of metals in small recesses using modulated electric fields |
| JP2000160138A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物 |
| US6821897B2 (en) * | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US7044836B2 (en) * | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
| US20070037892A1 (en) * | 2004-09-08 | 2007-02-15 | Irina Belov | Aqueous slurry containing metallate-modified silica particles |
| KR100641348B1 (ko) * | 2005-06-03 | 2006-11-03 | 주식회사 케이씨텍 | Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법 |
| KR101243423B1 (ko) * | 2005-11-11 | 2013-03-13 | 히타치가세이가부시끼가이샤 | 산화규소용 연마제, 첨가액 및 연마 방법 |
| CN101153206A (zh) * | 2006-09-29 | 2008-04-02 | 安集微电子（上海）有限公司 | 用于抛光多晶硅的化学机械抛光液 |
| CN101280158A (zh) * | 2007-04-06 | 2008-10-08 | 安集微电子（上海）有限公司 | 多晶硅化学机械抛光液 |
| JP4521058B2 (ja) * | 2008-03-24 | 2010-08-11 | 株式会社Ａｄｅｋａ | 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物 |
| JP2009289885A (ja) * | 2008-05-28 | 2009-12-10 | Fujifilm Corp | 研磨液及び研磨方法 |
| JP5467804B2 (ja) | 2008-07-11 | 2014-04-09 | 富士フイルム株式会社 | 窒化ケイ素用研磨液及び研磨方法 |
| JP2011142284A (ja) | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Ｃｍｐ研磨液、基板の研磨方法及び電子部品 |
| CN102108260B (zh) * | 2009-12-25 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种用于多晶硅抛光的化学机械抛光液 |
| WO2011093153A1 (ja) | 2010-02-01 | 2011-08-04 | Jsr株式会社 | 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法 |
| JP5695367B2 (ja) * | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
-
2012
- 2012-11-15 JP JP2012251521A patent/JP6054149B2/ja active Active
-
2013
- 2013-10-25 KR KR1020157012398A patent/KR102150403B1/ko active IP Right Grant
- 2013-10-25 CN CN201380059960.9A patent/CN104781366A/zh active Pending
- 2013-10-25 WO PCT/JP2013/078967 patent/WO2014077107A1/ja active Application Filing
- 2013-10-25 US US14/442,525 patent/US9837283B2/en active Active
- 2013-10-25 EP EP13855106.4A patent/EP2922085A4/de not_active Withdrawn
- 2013-10-25 SG SG11201503751TA patent/SG11201503751TA/en unknown
- 2013-11-07 TW TW102140485A patent/TWI604035B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US9837283B2 (en) | 2017-12-05 |
| TWI604035B (zh) | 2017-11-01 |
| EP2922085A4 (de) | 2016-07-13 |
| KR20150087221A (ko) | 2015-07-29 |
| CN104781366A (zh) | 2015-07-15 |
| WO2014077107A1 (ja) | 2014-05-22 |
| TW201425558A (zh) | 2014-07-01 |
| JP2014099565A (ja) | 2014-05-29 |
| US20160293436A1 (en) | 2016-10-06 |
| KR102150403B1 (ko) | 2020-09-01 |
| JP6054149B2 (ja) | 2016-12-27 |
| EP2922085A1 (de) | 2015-09-23 |
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