SG11201503724RA - Tungsten sintered compact sputtering target and method for producing same - Google Patents

Tungsten sintered compact sputtering target and method for producing same

Info

Publication number
SG11201503724RA
SG11201503724RA SG11201503724RA SG11201503724RA SG11201503724RA SG 11201503724R A SG11201503724R A SG 11201503724RA SG 11201503724R A SG11201503724R A SG 11201503724RA SG 11201503724R A SG11201503724R A SG 11201503724RA SG 11201503724R A SG11201503724R A SG 11201503724RA
Authority
SG
Singapore
Prior art keywords
sputtering target
sintered compact
producing same
tungsten sintered
compact sputtering
Prior art date
Application number
SG11201503724RA
Other languages
English (en)
Inventor
Kazumasa Ohashi
Takeo Okabe
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201503724RA publication Critical patent/SG11201503724RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
SG11201503724RA 2013-03-22 2014-03-20 Tungsten sintered compact sputtering target and method for producing same SG11201503724RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013060159 2013-03-22
PCT/JP2014/057646 WO2014148588A1 (ja) 2013-03-22 2014-03-20 タングステン焼結体スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201503724RA true SG11201503724RA (en) 2015-06-29

Family

ID=51580258

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201503724RA SG11201503724RA (en) 2013-03-22 2014-03-20 Tungsten sintered compact sputtering target and method for producing same

Country Status (8)

Country Link
US (1) US9812301B2 (ko)
EP (1) EP2907891B1 (ko)
JP (1) JP5856710B2 (ko)
KR (1) KR102059710B1 (ko)
CN (1) CN105102670B (ko)
SG (1) SG11201503724RA (ko)
TW (1) TWI615481B (ko)
WO (1) WO2014148588A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140129249A (ko) 2012-03-02 2014-11-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 텅스텐 소결체 스퍼터링 타깃 및 그 타깃을 사용하여 성막한 텅스텐 막
JP6310088B2 (ja) * 2014-09-30 2018-04-11 Ｊｘ金属株式会社 タングステンスパッタリングターゲット及びその製造方法
JP5999161B2 (ja) * 2014-10-08 2016-09-28 三菱マテリアル株式会社 Ｗ−Ｔｉスパッタリングターゲット
JP2017057490A (ja) * 2015-09-18 2017-03-23 山陽特殊製鋼株式会社 Ｃｏ−Ｆｅ−Ｂ系合金ターゲット材
JP6660130B2 (ja) 2015-09-18 2020-03-04 山陽特殊製鋼株式会社 ＣｏＦｅＢ系合金ターゲット材
US10043670B2 (en) * 2015-10-22 2018-08-07 Applied Materials, Inc. Systems and methods for low resistivity physical vapor deposition of a tungsten film
TW201730360A (zh) * 2015-10-27 2017-09-01 塔沙Ｓｍｄ公司 具有改良特性之低電阻率鎢膜及鎢靶材
JP7308013B2 (ja) * 2017-11-10 2023-07-13 Ｊｘ金属株式会社 タングステンスパッタリングターゲット及びその製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0593267A (ja) 1991-10-01 1993-04-16 Hitachi Metals Ltd 半導体用タングステンターゲツトおよびその製造方法
JPH0776771A (ja) * 1993-09-08 1995-03-20 Japan Energy Corp タングステンスパッタリングターゲット
JP3112804B2 (ja) * 1995-03-13 2000-11-27 セントラル硝子株式会社 半導体用タングステンターゲット
JP3086447B1 (ja) 1999-03-04 2000-09-11 株式会社ジャパンエナジー スパッタリング用タングステンターゲットおよびその製造方法
JP3721014B2 (ja) 1999-09-28 2005-11-30 株式会社日鉱マテリアルズ スッパタリング用タングステンターゲットの製造方法
JP4718664B2 (ja) * 2000-05-22 2011-07-06 株式会社東芝 スパッタリングターゲットの製造方法
US8252126B2 (en) 2004-05-06 2012-08-28 Global Advanced Metals, Usa, Inc. Sputter targets and methods of forming same by rotary axial forging
WO2006001976A2 (en) * 2004-06-15 2006-01-05 Tosoh Smd, Inc. High purity target manufacturing methods
JP2005171389A (ja) 2005-02-16 2005-06-30 Nikko Materials Co Ltd スパッタリング用タングステンターゲットの製造方法
CN101389784B (zh) * 2006-02-22 2011-04-20 Jx日矿日石金属株式会社 含有高熔点金属的烧结体溅射靶
JP4885065B2 (ja) 2007-06-11 2012-02-29 Ｊｘ日鉱日石金属株式会社 スッパタリング用タングステン焼結体ターゲットの製造方法
CN102046822B (zh) * 2008-06-02 2016-02-10 Jx日矿日石金属株式会社 钨烧结体溅射靶
CN101748365B (zh) 2008-12-19 2013-02-13 北京有色金属研究总院 一种高纯高富钨相钨钛靶材及其制备方法
JP4797099B2 (ja) 2009-10-01 2011-10-19 Ｊｘ日鉱日石金属株式会社 高純度タングステン粉末の製造方法
KR20140129249A (ko) 2012-03-02 2014-11-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 텅스텐 소결체 스퍼터링 타깃 및 그 타깃을 사용하여 성막한 텅스텐 막
JP5851612B2 (ja) 2012-11-02 2016-02-03 Jx日鉱日石金属株式会社 タングステン焼結体スパッタリングターゲット及び該ターゲットを用いて成膜したタングステン膜

Also Published As

Publication number Publication date
CN105102670B (zh) 2017-06-23
TW201504451A (zh) 2015-02-01
CN105102670A (zh) 2015-11-25
WO2014148588A1 (ja) 2014-09-25
US9812301B2 (en) 2017-11-07
EP2907891A4 (en) 2016-06-01
EP2907891A1 (en) 2015-08-19
KR102059710B1 (ko) 2019-12-26
KR20150130967A (ko) 2015-11-24
US20150357170A1 (en) 2015-12-10
TWI615481B (zh) 2018-02-21
EP2907891B1 (en) 2017-09-13
JP5856710B2 (ja) 2016-02-10
JPWO2014148588A1 (ja) 2017-02-16

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