SG11201406233VA - Layer-layer etch of non volatile materials - Google Patents
Layer-layer etch of non volatile materialsInfo
- Publication number
- SG11201406233VA SG11201406233VA SG11201406233VA SG11201406233VA SG11201406233VA SG 11201406233V A SG11201406233V A SG 11201406233VA SG 11201406233V A SG11201406233V A SG 11201406233VA SG 11201406233V A SG11201406233V A SG 11201406233VA SG 11201406233V A SG11201406233V A SG 11201406233VA
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- volatile materials
- non volatile
- etch
- layer etch
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/446,778 US20130270227A1 (en) | 2012-04-13 | 2012-04-13 | Layer-layer etch of non volatile materials |
PCT/US2013/034971 WO2013154867A1 (en) | 2012-04-13 | 2013-04-02 | Layer-layer etch of non volatile materials |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201406233VA true SG11201406233VA (en) | 2014-10-30 |
Family
ID=49324153
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201608573XA SG10201608573XA (en) | 2012-04-13 | 2013-04-02 | Layer-layer etch of non volatile materials |
SG11201406233VA SG11201406233VA (en) | 2012-04-13 | 2013-04-02 | Layer-layer etch of non volatile materials |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201608573XA SG10201608573XA (en) | 2012-04-13 | 2013-04-02 | Layer-layer etch of non volatile materials |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130270227A1 (ko) |
KR (1) | KR20140147133A (ko) |
SG (2) | SG10201608573XA (ko) |
TW (1) | TW201411725A (ko) |
WO (1) | WO2013154867A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9257638B2 (en) * | 2014-03-27 | 2016-02-09 | Lam Research Corporation | Method to etch non-volatile metal materials |
JP6777851B2 (ja) * | 2015-09-15 | 2020-10-28 | セントラル硝子株式会社 | ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法 |
US11270893B2 (en) | 2019-04-08 | 2022-03-08 | International Business Machines Corporation | Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures |
CN113950735A (zh) * | 2019-07-18 | 2022-01-18 | 东京毅力科创株式会社 | 具有可控金属蚀刻选择性的气相蚀刻 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5228206A (en) * | 1992-01-15 | 1993-07-20 | Submicron Systems, Inc. | Cluster tool dry cleaning system |
KR100255661B1 (ko) * | 1997-02-22 | 2000-05-01 | 윤종용 | 반도체 소자의 전극층 식각 방법 |
TW409152B (en) * | 1996-06-13 | 2000-10-21 | Samsung Electronic | Etching gas composition for ferroelectric capacitor electrode film and method for etching a transition metal thin film |
US6958295B1 (en) * | 1998-01-20 | 2005-10-25 | Tegal Corporation | Method for using a hard mask for critical dimension growth containment |
CN1130756C (zh) * | 1998-02-13 | 2003-12-10 | 精工爱普生株式会社 | 半导体装置的制造方法及热处理装置 |
US6395099B1 (en) * | 1999-02-08 | 2002-05-28 | Micron Technology | Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces |
US6436838B1 (en) * | 2000-04-21 | 2002-08-20 | Applied Materials, Inc. | Method of patterning lead zirconium titanate and barium strontium titanate |
JP4458703B2 (ja) * | 2001-03-16 | 2010-04-28 | 株式会社東芝 | 磁気抵抗効果素子、その製造方法、磁気ランダムアクセスメモリ、携帯端末装置、磁気ヘッド及び磁気再生装置 |
KR100605174B1 (ko) * | 2003-07-23 | 2006-07-28 | 동부일렉트로닉스 주식회사 | 반도체 소자의 본딩 패드 형성방법 |
KR100599437B1 (ko) * | 2004-06-30 | 2006-07-12 | 주식회사 하이닉스반도체 | 반도체소자의 소자분리 방법 |
US7765676B2 (en) * | 2004-11-18 | 2010-08-03 | Hitachi Global Storage Technologies Netherlands B.V. | Method for patterning a magnetoresistive sensor |
US20060286819A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials, Inc. | Method for silicon based dielectric deposition and clean with photoexcitation |
JP4849881B2 (ja) * | 2005-12-08 | 2012-01-11 | 株式会社日立ハイテクノロジーズ | プラズマエッチング方法 |
US9455362B2 (en) * | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
KR20090045529A (ko) * | 2007-11-02 | 2009-05-08 | 주식회사 하이닉스반도체 | 루테늄 식각 방법 및 그를 이용한 캐패시터의 제조 방법 |
KR101145044B1 (ko) * | 2008-01-30 | 2012-05-11 | 후지쯔 가부시끼가이샤 | 자기 저항 효과 소자, 자기 헤드, 및 정보 기억 장치 |
US20100327248A1 (en) * | 2009-06-29 | 2010-12-30 | Seagate Technology Llc | Cell patterning with multiple hard masks |
JP5665707B2 (ja) * | 2011-09-21 | 2015-02-04 | 株式会社東芝 | 磁気抵抗効果素子、磁気メモリ及び磁気抵抗効果素子の製造方法 |
-
2012
- 2012-04-13 US US13/446,778 patent/US20130270227A1/en not_active Abandoned
-
2013
- 2013-04-02 KR KR1020147031791A patent/KR20140147133A/ko not_active Application Discontinuation
- 2013-04-02 SG SG10201608573XA patent/SG10201608573XA/en unknown
- 2013-04-02 WO PCT/US2013/034971 patent/WO2013154867A1/en active Application Filing
- 2013-04-02 SG SG11201406233VA patent/SG11201406233VA/en unknown
- 2013-04-09 TW TW102112558A patent/TW201411725A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20130270227A1 (en) | 2013-10-17 |
TW201411725A (zh) | 2014-03-16 |
WO2013154867A1 (en) | 2013-10-17 |
KR20140147133A (ko) | 2014-12-29 |
SG10201608573XA (en) | 2016-12-29 |
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