SG10201608573XA - Layer-layer etch of non volatile materials - Google Patents

Layer-layer etch of non volatile materials

Info

Publication number
SG10201608573XA
SG10201608573XA SG10201608573XA SG10201608573XA SG10201608573XA SG 10201608573X A SG10201608573X A SG 10201608573XA SG 10201608573X A SG10201608573X A SG 10201608573XA SG 10201608573X A SG10201608573X A SG 10201608573XA SG 10201608573X A SG10201608573X A SG 10201608573XA
Authority
SG
Singapore
Prior art keywords
layer
volatile materials
non volatile
etch
layer etch
Prior art date
Application number
SG10201608573XA
Inventor
Joydeep Guha
Jeffrey Marks
Butsurin Jinnai
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201608573XA publication Critical patent/SG10201608573XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
SG10201608573XA 2012-04-13 2013-04-02 Layer-layer etch of non volatile materials SG10201608573XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/446,778 US20130270227A1 (en) 2012-04-13 2012-04-13 Layer-layer etch of non volatile materials

Publications (1)

Publication Number Publication Date
SG10201608573XA true SG10201608573XA (en) 2016-12-29

Family

ID=49324153

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201406233VA SG11201406233VA (en) 2012-04-13 2013-04-02 Layer-layer etch of non volatile materials
SG10201608573XA SG10201608573XA (en) 2012-04-13 2013-04-02 Layer-layer etch of non volatile materials

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201406233VA SG11201406233VA (en) 2012-04-13 2013-04-02 Layer-layer etch of non volatile materials

Country Status (5)

Country Link
US (1) US20130270227A1 (en)
KR (1) KR20140147133A (en)
SG (2) SG11201406233VA (en)
TW (1) TW201411725A (en)
WO (1) WO2013154867A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9257638B2 (en) * 2014-03-27 2016-02-09 Lam Research Corporation Method to etch non-volatile metal materials
JP6777851B2 (en) * 2015-09-15 2020-10-28 セントラル硝子株式会社 Dry etching method, semiconductor device manufacturing method and chamber cleaning method
US11270893B2 (en) 2019-04-08 2022-03-08 International Business Machines Corporation Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures
WO2021011101A1 (en) * 2019-07-18 2021-01-21 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of metals

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5228206A (en) * 1992-01-15 1993-07-20 Submicron Systems, Inc. Cluster tool dry cleaning system
TW409152B (en) * 1996-06-13 2000-10-21 Samsung Electronic Etching gas composition for ferroelectric capacitor electrode film and method for etching a transition metal thin film
KR100255661B1 (en) * 1997-02-22 2000-05-01 윤종용 Method for etching electrode layer of semiconductor device
US6958295B1 (en) * 1998-01-20 2005-10-25 Tegal Corporation Method for using a hard mask for critical dimension growth containment
KR20010006155A (en) * 1998-02-13 2001-01-26 야스카와 히데아키 Method of producing semiconductor device and heat treating apparatus
US6395099B1 (en) * 1999-02-08 2002-05-28 Micron Technology Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
US6436838B1 (en) * 2000-04-21 2002-08-20 Applied Materials, Inc. Method of patterning lead zirconium titanate and barium strontium titanate
JP4458703B2 (en) * 2001-03-16 2010-04-28 株式会社東芝 Magnetoresistive element, manufacturing method thereof, magnetic random access memory, portable terminal device, magnetic head, and magnetic reproducing device
KR100605174B1 (en) * 2003-07-23 2006-07-28 동부일렉트로닉스 주식회사 Method for forming bonding pad of semiconductor device
KR100599437B1 (en) * 2004-06-30 2006-07-12 주식회사 하이닉스반도체 Method for isolation in semiconductor device
US7765676B2 (en) * 2004-11-18 2010-08-03 Hitachi Global Storage Technologies Netherlands B.V. Method for patterning a magnetoresistive sensor
US20060286819A1 (en) * 2005-06-21 2006-12-21 Applied Materials, Inc. Method for silicon based dielectric deposition and clean with photoexcitation
JP4849881B2 (en) * 2005-12-08 2012-01-11 株式会社日立ハイテクノロジーズ Plasma etching method
US9455362B2 (en) * 2007-10-06 2016-09-27 Solexel, Inc. Laser irradiation aluminum doping for monocrystalline silicon substrates
KR20090045529A (en) * 2007-11-02 2009-05-08 주식회사 하이닉스반도체 Method for etching platinum and method for fabricating capacitor using the same
JP5012910B2 (en) * 2008-01-30 2012-08-29 富士通株式会社 Magnetoresistive element, magnetic head, and information storage device
US20100327248A1 (en) * 2009-06-29 2010-12-30 Seagate Technology Llc Cell patterning with multiple hard masks
JP5665707B2 (en) * 2011-09-21 2015-02-04 株式会社東芝 Magnetoresistive element, magnetic memory, and method of manufacturing magnetoresistive element

Also Published As

Publication number Publication date
SG11201406233VA (en) 2014-10-30
TW201411725A (en) 2014-03-16
WO2013154867A1 (en) 2013-10-17
KR20140147133A (en) 2014-12-29
US20130270227A1 (en) 2013-10-17

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