SG11201403570VA - High-purity copper sputtering target - Google Patents
High-purity copper sputtering targetInfo
- Publication number
- SG11201403570VA SG11201403570VA SG11201403570VA SG11201403570VA SG11201403570VA SG 11201403570V A SG11201403570V A SG 11201403570VA SG 11201403570V A SG11201403570V A SG 11201403570VA SG 11201403570V A SG11201403570V A SG 11201403570VA SG 11201403570V A SG11201403570V A SG 11201403570VA
- Authority
- SG
- Singapore
- Prior art keywords
- sputtering target
- purity copper
- copper sputtering
- purity
- target
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 238000005477 sputtering target Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012003781 | 2012-01-12 | ||
PCT/JP2012/083396 WO2013105424A1 (fr) | 2012-01-12 | 2012-12-25 | Cible de pulvérisation cathodique de cuivre à haut degré de pureté |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201403570VA true SG11201403570VA (en) | 2014-09-26 |
Family
ID=48781382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201403570VA SG11201403570VA (en) | 2012-01-12 | 2012-12-25 | High-purity copper sputtering target |
Country Status (8)
Country | Link |
---|---|
US (1) | US9773651B2 (fr) |
EP (1) | EP2784174B1 (fr) |
JP (1) | JP5747091B2 (fr) |
KR (1) | KR101645834B1 (fr) |
CN (1) | CN104053814B (fr) |
SG (1) | SG11201403570VA (fr) |
TW (1) | TW201335402A (fr) |
WO (1) | WO2013105424A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2733235B1 (fr) | 2011-09-30 | 2017-05-03 | JX Nippon Mining & Metals Corporation | Cible de pulvérisation cathodique et procédé de fabrication pour celle-ci |
WO2016153090A1 (fr) * | 2015-03-23 | 2016-09-29 | 부산대학교 산학협력단 | Procédé de préparation de film mince de cuivre au moyen d'une cible de monocristal de cuivre |
TWI663274B (zh) * | 2017-03-30 | 2019-06-21 | 日商Jx金屬股份有限公司 | Sputtering target and manufacturing method thereof |
JP6533265B2 (ja) * | 2017-03-30 | 2019-06-19 | 住友化学株式会社 | ターゲット材の洗浄のための装置 |
US11062889B2 (en) | 2017-06-26 | 2021-07-13 | Tosoh Smd, Inc. | Method of production of uniform metal plates and sputtering targets made thereby |
KR102429213B1 (ko) * | 2018-05-21 | 2022-08-04 | 가부시키가이샤 아루박 | 스퍼터링 타겟 및 그 제조 방법 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950009278B1 (ko) * | 1990-10-09 | 1995-08-18 | 니뽄 덴끼 가부시끼가이샤 | 반도체장치 제조방법 |
JP2857015B2 (ja) * | 1993-04-08 | 1999-02-10 | 株式会社ジャパンエナジー | 高純度アルミニウムまたはその合金からなるスパッタリングターゲット |
JP3403918B2 (ja) * | 1997-06-02 | 2003-05-06 | 株式会社ジャパンエナジー | 高純度銅スパッタリングタ−ゲットおよび薄膜 |
TW408351B (en) * | 1997-10-17 | 2000-10-11 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP2001107227A (ja) | 1999-10-08 | 2001-04-17 | Kojundo Chem Lab Co Ltd | 一体構造型スパッタリングターゲットの製造方法 |
US20040072009A1 (en) | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
JP2002121662A (ja) | 2000-04-07 | 2002-04-26 | Kojundo Chem Lab Co Ltd | 一体構造型スパッタリングターゲット |
US6605199B2 (en) | 2001-11-14 | 2003-08-12 | Praxair S.T. Technology, Inc. | Textured-metastable aluminum alloy sputter targets and method of manufacture |
US6896748B2 (en) | 2002-07-18 | 2005-05-24 | Praxair S.T. Technology, Inc. | Ultrafine-grain-copper-base sputter targets |
US20040016635A1 (en) | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
JP4650811B2 (ja) | 2005-03-28 | 2011-03-16 | Jx日鉱日石金属株式会社 | 深鍋状銅製スパッタリングターゲット |
JP5140935B2 (ja) * | 2006-03-28 | 2013-02-13 | 富士通セミコンダクター株式会社 | マグネトロンスパッタ成膜装置、及び半導体装置の製造方法 |
US20070251818A1 (en) | 2006-05-01 | 2007-11-01 | Wuwen Yi | Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets |
WO2010038642A1 (fr) | 2008-09-30 | 2010-04-08 | 日鉱金属株式会社 | Cible de pulvérisation de cuivre de haute pureté ou d’alliage de cuivre de haute pureté, procédé pour la fabrication de la cible de pulvérisation, et film pulvérisé de cuivre de haute pureté ou d’alliage de cuivre de haute pureté |
WO2010085316A1 (fr) * | 2009-01-22 | 2010-07-29 | Tosoh Smd, Inc. | Cible en alliage d'aluminium monolithique et procédé de fabrication |
JP5491845B2 (ja) | 2009-12-16 | 2014-05-14 | 株式会社Shカッパープロダクツ | スパッタリングターゲット材 |
EP2733235B1 (fr) | 2011-09-30 | 2017-05-03 | JX Nippon Mining & Metals Corporation | Cible de pulvérisation cathodique et procédé de fabrication pour celle-ci |
JP6038305B2 (ja) | 2013-09-12 | 2016-12-07 | Jx金属株式会社 | バッキングプレート一体型の金属製スパッタリングターゲット及びその製造方法 |
-
2012
- 2012-12-25 WO PCT/JP2012/083396 patent/WO2013105424A1/fr active Application Filing
- 2012-12-25 KR KR1020147021276A patent/KR101645834B1/ko active IP Right Grant
- 2012-12-25 US US14/370,225 patent/US9773651B2/en active Active
- 2012-12-25 JP JP2013553238A patent/JP5747091B2/ja active Active
- 2012-12-25 CN CN201280067023.3A patent/CN104053814B/zh active Active
- 2012-12-25 SG SG11201403570VA patent/SG11201403570VA/en unknown
- 2012-12-25 EP EP12864961.3A patent/EP2784174B1/fr active Active
-
2013
- 2013-01-03 TW TW102100100A patent/TW201335402A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20140367253A1 (en) | 2014-12-18 |
JP5747091B2 (ja) | 2015-07-08 |
EP2784174B1 (fr) | 2017-11-01 |
KR101645834B1 (ko) | 2016-08-04 |
WO2013105424A1 (fr) | 2013-07-18 |
EP2784174A1 (fr) | 2014-10-01 |
CN104053814A (zh) | 2014-09-17 |
KR20140105867A (ko) | 2014-09-02 |
JPWO2013105424A1 (ja) | 2015-05-11 |
EP2784174A4 (fr) | 2015-06-24 |
CN104053814B (zh) | 2016-08-24 |
TW201335402A (zh) | 2013-09-01 |
TWI560290B (fr) | 2016-12-01 |
US9773651B2 (en) | 2017-09-26 |
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