SG11201401090PA - Method for forming diffusion regions in a silicon substrate - Google Patents
Method for forming diffusion regions in a silicon substrateInfo
- Publication number
- SG11201401090PA SG11201401090PA SG11201401090PA SG11201401090PA SG11201401090PA SG 11201401090P A SG11201401090P A SG 11201401090PA SG 11201401090P A SG11201401090P A SG 11201401090PA SG 11201401090P A SG11201401090P A SG 11201401090PA SG 11201401090P A SG11201401090P A SG 11201401090PA
- Authority
- SG
- Singapore
- Prior art keywords
- silicon substrate
- diffusion regions
- forming diffusion
- forming
- regions
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000009792 diffusion process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/250,594 US8586397B2 (en) | 2011-09-30 | 2011-09-30 | Method for forming diffusion regions in a silicon substrate |
| PCT/US2012/057350 WO2013049216A2 (fr) | 2011-09-30 | 2012-09-26 | Procédé pour former des régions de diffusion dans un substrat de silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201401090PA true SG11201401090PA (en) | 2014-04-28 |
Family
ID=47991480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201401090PA SG11201401090PA (en) | 2011-09-30 | 2012-09-26 | Method for forming diffusion regions in a silicon substrate |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8586397B2 (fr) |
| JP (2) | JP2014534617A (fr) |
| KR (1) | KR20140071478A (fr) |
| CN (1) | CN103843159B (fr) |
| DE (1) | DE112012004079T5 (fr) |
| MY (1) | MY167102A (fr) |
| SG (1) | SG11201401090PA (fr) |
| WO (1) | WO2013049216A2 (fr) |
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| US9559228B2 (en) | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
| US8586397B2 (en) | 2011-09-30 | 2013-11-19 | Sunpower Corporation | Method for forming diffusion regions in a silicon substrate |
| US8992803B2 (en) * | 2011-09-30 | 2015-03-31 | Sunpower Corporation | Dopant ink composition and method of fabricating a solar cell there from |
| TWI645511B (zh) * | 2011-12-01 | 2018-12-21 | 美商應用材料股份有限公司 | 用於銅阻障層應用之摻雜的氮化鉭 |
| WO2015080985A1 (fr) * | 2013-11-27 | 2015-06-04 | Entegris, Inc. | Précurseurs de dopant pour dopage monocouche |
| CN105336621B (zh) * | 2014-07-30 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管的形成方法 |
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| USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
| USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
| USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
| USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
| US11270911B2 (en) | 2020-05-06 | 2022-03-08 | Applied Materials Inc. | Doping of metal barrier layers |
| CN117810276A (zh) * | 2024-03-01 | 2024-04-02 | 隆基绿能科技股份有限公司 | 一种背接触电池及其制造方法 |
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| US9559228B2 (en) | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
| US8586397B2 (en) | 2011-09-30 | 2013-11-19 | Sunpower Corporation | Method for forming diffusion regions in a silicon substrate |
| US8992803B2 (en) | 2011-09-30 | 2015-03-31 | Sunpower Corporation | Dopant ink composition and method of fabricating a solar cell there from |
| US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
| DE102013108422A1 (de) * | 2013-08-05 | 2015-02-05 | Universität Konstanz | Verfahren zum Erzeugen dotierter oder metallisierter Bereiche in einem Solarzellensubstrat sowie entsprechende Solarzelle |
-
2011
- 2011-09-30 US US13/250,594 patent/US8586397B2/en not_active Expired - Fee Related
-
2012
- 2012-09-26 MY MYPI2014000944A patent/MY167102A/en unknown
- 2012-09-26 WO PCT/US2012/057350 patent/WO2013049216A2/fr active Application Filing
- 2012-09-26 JP JP2014533688A patent/JP2014534617A/ja active Pending
- 2012-09-26 KR KR20147011770A patent/KR20140071478A/ko active IP Right Grant
- 2012-09-26 DE DE201211004079 patent/DE112012004079T5/de not_active Withdrawn
- 2012-09-26 CN CN201280048109.1A patent/CN103843159B/zh not_active Expired - Fee Related
- 2012-09-26 SG SG11201401090PA patent/SG11201401090PA/en unknown
-
2013
- 2013-10-23 US US14/061,422 patent/US9018033B2/en not_active Expired - Fee Related
-
2017
- 2017-08-14 JP JP2017156670A patent/JP2018011066A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| MY167102A (en) | 2018-08-10 |
| JP2018011066A (ja) | 2018-01-18 |
| CN103843159A (zh) | 2014-06-04 |
| WO2013049216A2 (fr) | 2013-04-04 |
| CN103843159B (zh) | 2016-06-15 |
| KR20140071478A (ko) | 2014-06-11 |
| US20140048133A1 (en) | 2014-02-20 |
| US8586397B2 (en) | 2013-11-19 |
| WO2013049216A3 (fr) | 2013-05-23 |
| US20130081687A1 (en) | 2013-04-04 |
| JP2014534617A (ja) | 2014-12-18 |
| US9018033B2 (en) | 2015-04-28 |
| DE112012004079T5 (de) | 2014-07-10 |
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