SG10202000520QA - Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additives - Google Patents

Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additives

Info

Publication number
SG10202000520QA
SG10202000520QA SG10202000520QA SG10202000520QA SG10202000520QA SG 10202000520Q A SG10202000520Q A SG 10202000520QA SG 10202000520Q A SG10202000520Q A SG 10202000520QA SG 10202000520Q A SG10202000520Q A SG 10202000520QA SG 10202000520Q A SG10202000520Q A SG 10202000520QA
Authority
SG
Singapore
Prior art keywords
sti
cmp
polishing
combination
trench isolation
Prior art date
Application number
SG10202000520QA
Other languages
English (en)
Inventor
Shi Xiaobo
P Murella Krishna
D Rose Joseph
Zhou Hongjun
Leonard O'neill Mark
Original Assignee
Versum Materials Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG10202000520QA publication Critical patent/SG10202000520QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG10202000520QA 2019-01-25 2020-01-20 Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additives SG10202000520QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962796786P 2019-01-25 2019-01-25
US16/737,083 US11326076B2 (en) 2019-01-25 2020-01-08 Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with low abrasive concentration and a combination of chemical additives

Publications (1)

Publication Number Publication Date
SG10202000520QA true SG10202000520QA (en) 2020-08-28

Family

ID=69191954

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202000520QA SG10202000520QA (en) 2019-01-25 2020-01-20 Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additives

Country Status (8)

Country Link
US (1) US11326076B2 (zh)
EP (1) EP3686257B1 (zh)
JP (1) JP6990261B2 (zh)
KR (1) KR102382368B1 (zh)
CN (1) CN111732896B (zh)
IL (1) IL272143B2 (zh)
SG (1) SG10202000520QA (zh)
TW (1) TWI737133B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114929822A (zh) * 2019-12-04 2022-08-19 弗萨姆材料美国有限责任公司 高氧化物膜去除速率浅沟槽隔离(sti)化学机械平面化(cmp)抛光
KR20240062240A (ko) * 2022-10-28 2024-05-09 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
CN116656244A (zh) * 2023-07-20 2023-08-29 包头天骄清美稀土抛光粉有限公司 用于鳍式场效应晶体管的化学机械抛光组合物及制备方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6491843B1 (en) 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6964923B1 (en) 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
JP2002110596A (ja) 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法
TWI228538B (en) 2000-10-23 2005-03-01 Kao Corp Polishing composition
US6540935B2 (en) 2001-04-05 2003-04-01 Samsung Electronics Co., Ltd. Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
US6616514B1 (en) 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
KR100637772B1 (ko) 2004-06-25 2006-10-23 제일모직주식회사 반도체 ｓｔｉ 공정용 고선택비 ｃｍｐ 슬러리 조성물
US7557875B2 (en) * 2005-03-22 2009-07-07 Industrial Technology Research Institute High performance flexible display with improved mechanical properties having electrically modulated material mixed with binder material in a ratio between 6:1 and 0.5:1
WO2006119249A2 (en) 2005-04-29 2006-11-09 Brown University Aerogels and methods of using the same for chemical mechanical planarization and for extracting metal ions
JP2008244316A (ja) 2007-03-28 2008-10-09 Fujifilm Corp 金属用研磨液及び研磨方法
KR101760529B1 (ko) 2009-06-05 2017-07-21 바스프 에스이 화학 기계적 평탄화(ＣＭＰ)를 위한 ＣｅＯ２ 나노입자 코팅된 라스베리형 금속 산화물 나노구조체
US8778203B2 (en) 2010-05-28 2014-07-15 Clarkson University Tunable polish rates by varying dissolved oxygen content
JP5516184B2 (ja) * 2010-07-26 2014-06-11 信越化学工業株式会社 合成石英ガラス基板の製造方法
WO2012032461A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
CN102337084B (zh) 2011-07-25 2014-04-09 郑州磨料磨具磨削研究所有限公司 Led衬底加工用研磨液及其制备方法
KR20140122271A (ko) * 2012-02-10 2014-10-17 바스프 에스이 단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
JP6584114B2 (ja) * 2015-03-30 2019-10-02 ニッタ・ハース株式会社 研磨用組成物
US10421890B2 (en) * 2016-03-31 2019-09-24 Versum Materials Us, Llc Composite particles, method of refining and use thereof
CN107011806A (zh) * 2017-04-27 2017-08-04 安徽智诚光学科技有限公司 一种手机液晶触控屏抛光剂及其制备方法
JP2019050307A (ja) * 2017-09-11 2019-03-28 株式会社フジミインコーポレーテッド 研磨方法、ならびに研磨用組成物およびその製造方法

Also Published As

Publication number Publication date
CN111732896A (zh) 2020-10-02
TWI737133B (zh) 2021-08-21
IL272143A (en) 2020-07-30
CN111732896B (zh) 2022-11-04
TW202033688A (zh) 2020-09-16
IL272143B1 (en) 2023-04-01
JP6990261B2 (ja) 2022-01-12
US20200239735A1 (en) 2020-07-30
EP3686257A1 (en) 2020-07-29
KR102382368B1 (ko) 2022-04-05
US11326076B2 (en) 2022-05-10
JP2020117709A (ja) 2020-08-06
KR20200092892A (ko) 2020-08-04
EP3686257B1 (en) 2022-01-19
IL272143B2 (en) 2023-08-01

Similar Documents

Publication Publication Date Title
SG10202000520QA (en) Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with low abrasive concentration and a combination of chemical additives
SG10201907380RA (en) Oxide chemical mechanical planarization (cmp) polishing compositions
SG10201908119RA (en) Colloidal silica chemical-mechanical polishing composition
SG10201704912YA (en) Chemical mechanical polishing (cmp) of cobalt-containing substrate
EP3230395B8 (en) Cmp compositons exhibiting reduced dishing in sti wafer polishing
TW200738855A (en) CMP abrasive for polishing insulating film, polishing method and semiconductor electronic parts polished by the polishing method
SG10201801578TA (en) Chemical mechanical planarization of films comprising elemental silicon
EP3631046A4 (en) OXIDIZING LIQUID FOR CHEMICAL-MECHANICAL POLISHING OF CERAMIC MATERIALS
SG10201906982SA (en) Tungsten chemical mechanical planarization (cmp) with low dishing and low erosion topography
IL267717A (en) Mechanical chemical polishing to create channels on a surface with a low oxide content
TW200801166A (en) Iodate-containing chemical-mechanical polishing compositions and methods
TW201612131A (en) Manufacturing method of glass substrate and manufacturing apparatus of glass substrate
MY186027A (en) Cmp compositions and methods for polishing rigid disk surfaces
IL267714A (en) Chemical mechanical polishing of canals using low oxygen concentration
IL267715A (en) Chemical and mechanical polishing of a low oxide channel
TW200703492A (en) Manufacture of semiconductor device with CMP
SG10202000584UA (en) Shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing with tunable silicon oxide and silicon nitride removal rates
SG10201911058VA (en) High oxide vs nitride selectivity, low and uniform oxide trench dishing in shallow trench isolation(sti) chemical mechanical planarization polishing(cmp)
EP4069794A4 (en) CHEMICAL-MECHANICAL PLANARIZATION (CMP) POLISHING OF SHALLOW TRENCH INSULATION (STI) AT HIGH RATE OF OXIDE FILM REMOVAL
EP4073187A4 (en) PLANARIZATION BY CHEMICAL-MECHANICAL POLISHING OF INSULATION BY SHALLOW TRENCHES WITH LOW OXIDE TRENCH BENDING
SG10202001383QA (en) Shallow trench isolation chemical and mechanical polishing slurry
SG10201910121PA (en) SUPPRESSING SiN REMOVAL RATES AND REDUCING OXIDE TRENCH DISHING FOR SHALLOW TRENCH ISOLATION (STI) PROCESS
EP4048746A4 (en) CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR SHALLOW TRENCH INSULATION AT HIGH OXIDE REMOVAL RATES
IL291731A (en) Chemical mechanical planarization with the composition containing a little copper
SG11202107216XA (en) Chemical-mechanical polishing particle and polishing slurry composition comprising same